N04L163WC1C ETC

Document overview

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Technical content

Features

  • Single Wide Power Supply Range 2.2 to 3.6 Volts
  • Very low standby current 2.0µA at 3.0V (Typical)
  • Very low operating current 1.5mA at 3.0V and 1µs (Typical)
  • Simple memory control Single Chip Enable (CE) Byte control for independent byte operation Output Enable (OE ) for memory expansion
  • Low voltage data retention Vcc = 1.5V
  • Very fast output enable access time 25ns OE access time
  • Automatic power down to standby mode
  • TTL compatible three-state output driver
  • Compact space saving BGA package avail- able
  • Ultra Low Power Sort Available Pin Configurations Product Family Part Number Package Type Operating Temperature Power Supply (Vcc) Speed Options Standby Current (ISB), Typical Operating Current (Icc), Typical N04L163WC1CZ1 VFBGA Pb-Free -40oC to +85oC 2.2V - 3.6V 55ns 2 µA 1.5 mA @ 1MHzN04L163WC1CT1 44-TSOP II Pb-Free PIN ONE A CE I/O0 I/O1 I/O2 I/O3 VCC VSS I/O I/O5 I/O6 I/O7 WE A17 A16 A15 A14 A13 A OE UB LB I/O15 I/O14 I/O13 I/O12 VSS VCC I/O I/O10 I/O9 I/O8 NC A A10 A11 A12 N04L163WC1C TSOP - II 123456 A LB OE A0 A 1 A2 NC B I/O8 UB A3 A 4 CE I/O0 C I/O9 I/O 10 A 5 A 6 I/O 1 I/O 2 D VSS I/O11 A 17 A7 I/O3 VCC E VCC I/O12 DNU A16 I/O4 VSS F I/O14 I/O13 A14 A15 I/O5 I/O6 G I/O15 NC A12 A13 WE I/O7 H NC A8 A9 A10 A11 NC

48 Pin VFBGA (top)

LB Lower Byte Enable Input UB Upper Byte Enable Input I/O0-I/O15 Data Inputs/Outputs VCC Power VSS Ground NC Not Connected DNU Do Not Use

Stock No. 23373-C 1/05 2 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. NanoAmp Solutions, Inc. N04L163WC1C Advance Information Functional Block Diagram Functional Description CE WE OE UB LB I/O0 - I/O15 1. When UB and LB are in select mode (low), I/O0 - I/O15 are affected as shown. When LB only is in the select mode only I/O0 - I/O7 are affected as shown. When UB is in the select mode only I/O8 - I/O15 are affected as shown. MODE POWER HXXXX H i g h Z Standby2 2. When the device is in standby mode, control inputs (WE , OE, UB, and LB), address inputs and data input/outputs are internally isolated from any external influence and disabled from exerting any influence externally. Standby X X X H H High Z Standby2 Standby LL X3 3. When WE is invoked, the OE input is internally disabled and has no effect on the circuit. L1 L1 Data In Write3 Active LHL L1 L1 Data Out Read Active LHH L1 L1 High Z Active Active Capacitance1 1. These parameters are verified in device characterization and are not 100% tested Item Symbol Test Condition Min Max Unit Input Capacitance CIN VIN = 0V, f = 1 MHz, TA = 25oC 10 pF I/O Capacitance CI/O VIN = 0V, f = 1 MHz, TA = 25oC 10 pF Address Inputs A0 - A3 Address Inputs A4 - A17 Word Address Decode Logic 16K Page x 16 word x 16 bit RAM Array Word Mux Input/ Output Mux and Buffers Page Address Decode Logic Control Logic CE WE OE UB LB I/O0 - I/O7 I/O8 - I/O15

Stock No. 23373-C 1/05 3 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. NanoAmp Solutions, Inc. N04L163WC1C Advance Information Absolute Maximum Ratings1 1. Stresses greater than those listed above may cause permanent da mage to the device. This is a stress rating only and functiona l operation of the device at these or any ot her conditions above those indicated in the operating se ction of this specification i s not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Item Symbol Rating Unit Voltage on any pin relative to VSS VIN,OUT –0.3 to VCC+0.3 V Voltage on VCC Supply Relative to VSS VCC –0.3 to 4.5 V Power Dissipation PD 500 mW Storage Temperature TSTG –65 to 150 oC Operating Temperature TA -40 to +85 oC Soldering Temperature and Time TSOLDER 260oC, 10sec oC Operating Characteristics (Over Specified Temperature Range) Item Symbol Test Conditions Min. Typ1 1. Typical values are measured at Vcc=Vcc Typ., T A=25°C and are not 100% tested. Max Unit Supply Voltage VCC 2.2 3.0 3.6 V Data Retention Voltage VDR Chip Disabled 1.5 V Input High Voltage VIH Vcc = 2.2V to 2.7V 1.8 VCC+0.3 VVcc = 2.7V to 3.6V 2.2 VCC+0.3 Input Low Voltage VIL Output High Voltage VOH IOH = -0.1mA, Vcc = 2.20V 2.0 VIOH = -1.0mA, Vcc = 2.70V 2.4 Output Low Voltage VOL IOL = 0.1mA, Vcc = 2.20V 0.4 VIOL = 2.1mA, Vcc = 2.70V 0.4 Input Leakage Current ILI VIN = 0 to VCC -1 1 µA Output Leakage Current ILO OE = VIH or Chip Disabled VOUT = 0 to VCC -1 1 µA Read/Write Operating Supply Current @ 1 µs Cycle Time2 2. This parameter is specified with the ou tputs disabled to avoid external loading effects. The user must add current required to drive output capacitance expected in the actual system. ICC1 VCC=3.6 V, VIN=VIH or VIL Chip Enabled, IOUT = 0 1.5 3.0 mA-L 1.5 3.0 Read/Write Operating Supply Current @ fmax ICC2 VCC=3.6 V, VIN=VIH or VIL Chip Enabled, IOUT = 0 8 15.0 mA-L 8 10.0 Maximum Standby Current ISB1 VIN = VCC or 0V Chip Disabled tA= 85oC, VCC = 3.6 V 2.0 12 µA-L 2.0 8 Maximum Data Retention Current IDR Vcc = 1.5V, CE ≥ Vcc - 0.2V, VIN ≥ Vcc - 0.2V or VIN ≤ 0.2V 9 µA-L 6

Stock No. 23373-C 1/05 4 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. NanoAmp Solutions, Inc. N04L163WC1C Advance Information Note: 1. Full device AC operation assumes a 100us ramp time from 0 to Vcc(min) and 200us wait time after Vcc stablization. 2. Full device operation requires linear Vcc ramp from VDR to Vcc(min) ≥ 100us or stable at Vcc(min) ≥ 100us. Timing Test Conditions Item Input Pulse Level 0.1VCC to 0.9 VCC Input Rise and Fall Time 1V/ns Input and Output Timing Reference Levels 0.5 VCC Output Load CL = 50pF Operating Temperature -40 to +85 oC Timing Item Symbol -55 Units Min. Max. Read Cycle Time tRC 55 ns Address Access Time tAA 55 ns Chip Enable to Valid Output tCO 55 ns Output Enable to Valid Output tOE 25 ns Byte Select to Valid Output tLB, tUB 55 ns Chip Enable to Low-Z output tLZ 10 ns Output Enable to Low-Z Output tOLZ 5n s Byte Select to Low-Z Output tLBZ, tUBZ 10 ns Chip Disable to High-Z Output tHZ 02 0 n s Output Disable to High-Z Output tOHZ 02 0 n s Byte Select Disable to High-Z Output tLBHZ, tUBHZ 02 0 n s Output Hold from Address Change tOH 10 ns Write Cycle Time tWC 55 ns Chip Enable to End of Write tCW 40 ns Address Valid to End of Write tAW 40 ns Byte Select to End of Write tLBW, tUBW 40 ns Write Pulse Width tWP 40 ns Address Setup Time tAS 0n s Write Recovery Time tWR 0n s Write to High-Z Output tWHZ 20 ns Data to Write Time Overlap tDW 25 ns Data Hold from Write Time tDH 0 ns End Write to Low-Z Output tOW 10 ns

Stock No. 23373-C 1/05 5 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. NanoAmp Solutions, Inc. N04L163WC1C Advance Information Timing of Read Cycle (CE = OE = VIL, WE = VIH) Timing Waveform of Read Cycle (WE= VIH) Address Data Out tRC tAA tOH Data ValidPrevious Data Valid Address LB, UB OE Data Valid tRC tAA tCO tHZ tOHZ tLBHZ, tUBHZ tOLZ tOE tLZ High-Z Data Out tLB, tUB tLBLZ, tUBLZ CE

Stock No. 23373-C 1/05 6 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. NanoAmp Solutions, Inc. N04L163WC1C Advance Information Timing Waveform of Write Cycle (WE control) Timing Waveform of Write Cycle (CE Control) Address Data In CE LB, UB Data Valid tWC tAW tCW tWR tWHZ tDH High-Z WE Data Out High-Z tOW tAS tWP tDW tLBW, tUBW Address WE Data Valid tWC tAW tCW tWR tDH LB, UB Data In High-Z tAS tWP tLZ tDW tLBW, tUBW Data Out tWHZ CE

Stock No. 23373-C 1/05 7 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. NanoAmp Solutions, Inc. N04L163WC1C Advance Information Data Retention Waveform Data Retention Characteristics Parameter Description Condition Min Typ Max Unit VDR Vcc for Data Retention 1.5 V ICCDR Data Retention Current Vcc = 1.5V, CE ≥ Vcc - 0.2V, VIN ≥ Vcc - 0.2V or VIN ≤ 0.2V 9 µA-L 6 tCDR Chip Deselect to Data Retention Time 0n s tR Operation Recovery Time tRC ns Vcc Data Retention Mode VDR ≥ 1.5V tCDR tR Vcc(min) Vcc(min) CE or LB/UB

Stock No. 23373-C 1/05 8 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. NanoAmp Solutions, Inc. N04L163WC1C Advance Information Note: 1. All dimensions in inches (Millimeters) 18.571 18.313 10.262 10.058 SEE DETAIL B 1.194 0.991 11.938 11.735 0.40 0.30

0.80 BSC

0.597 0.406 0o-5o 0.150 0.050 0.210 0.120

Stock No. 23373-C 1/05 9 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. NanoAmp Solutions, Inc. N04L163WC1C Advance Information Dimensions (mm) DE e = 0.75 BALL MATRIX TYPESD SE J K SIDE VIEWTOP VIEW BOTTOM VIEW E D A1 BALL PAD CORNER (3)

1.00 MAX

0.23±0.05 0.15 0.05 Z Z 1. 0.30±0.05 DIA. 1. DIMENSION IS MEASURED AT THE MAXIMUM SOLDER BALL DIAMETER. PARALLEL TO PRIMARY Z. 2. PRIMARY DATUM Z AND SEATING PLANE ARE DEFINED BY THE SPHERICAL CROWNS OF THE SOLDER BALLS. 3. A1 BALL PAD CORNER I.D. TO BE MARKED BY INK. 2. SEATING PLANE - Z SD SE e K TYP J TYP e A1 BALL PAD CORNER

Stock No. 23373-C 1/05 10 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. NanoAmp Solutions, Inc. N04L163WC1C Advance Information

Ordering Information

© 2001 - 2002 Nanoamp Solutions, Inc. All rights reserved. NanoAmp Solutions, Inc. ("NanoAmp") reserves the right to change or modify the information contained in this data sheet and the products described therein, without prior notice. NanoAmp does not convey any license under its patent rights nor the rights of others. Charts, drawings and schedules contained in this data sheet are provided for illustration pur- poses only and they vary depending upon specific applications. NanoAmp makes no warranty or guarantee regarding suitability of these products for any particular purpose, nor does NanoAmp assume any liability arising out of the application or use of any product or circuit described herein. NanoAmp does not authorize use of its products as critical components in any application in which the failure of the NanoAmp product may be expected to result in significant injury or death, including life support systems and critical medical instruments.

Revision History

Revision # Date Change Description A Oct 6. 2004 Initial Preliminary Release B Nov 8. 2004 General Update C Jan 14. 2005 General Update N04L163WC1CX-XX I L 55 = 55ns T1 = 44-pin TSOP II Pb-Free Package Z1 = 48-ball VFBGA Pb-Free Package Performance Package Type I = Industrial Temp -40 to 85oC L = Ultra Low Power Sort