MTZJ11B

MTZJ11B_1 ROHM

Document overview

• Manufacturer or author: ROHM CO., LTD.
• PDF pages: 5

Technical content

Rev.D 1/4 Zener diode MTZJ11B zApplications z Dimensions (Unit : mm) Constant voltage control zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. zConstruction Silicon planer zTaping specification (Unit : mm) zAbsolute maximum ratings (Ta=25°C) Symbol Unit Pm W Tj ℃ Tstg ℃ Junction temperature Storage temperature Power dissipation Limits 175 -65 to +175 500 Parameter φ0.4±0.1 φ1.8±0.2 JEDEC : DO-34 ROHM : MSD EX. MTZJ3.6B CATHODE BAND (BLACK) TYPE NO. (BLACK) 3.6B T-72 52.4±1.5 T-72 5.0±0.5 T-77 5.0±0.3 T-72 T-77 T-72 T-77 T-72 1/2A±1.2 T-77 1/2A±0.4 T-72 0.7 max. T-77 0.2 max. T-72 T-77 T-72 T-77 T-72 1.5 max. cf : cumulative pitch tolerance with 20 pitch than ±1.5mm T-77 0. 4 max. ＊H1(6mm)：BROWN Symbol Standard dimension value(mm) Ａ T-77 26.0 +0.4 B C1 . 0 m a x . H2 5.0±0.5 |L1-L2| E Ｆ H1 6.0±0.5 AH2 H2 E B C L2L1 F DH1 BLUE BROWN

Rev.D 2/4 zElectrical characteristics curves (Ta=25°C) zType NO. TYPE TYPE NO. TYPE TYPE NO. MTZJ 3.6B 3.6B MTZJ 12B 12B MTZJ 3.9B 3.9B MTZJ 13B 13B MTZJ 4.3B 4.3B MTZJ 15B 15B MTZJ 4.7B 4.7B MTZJ 16B 16B MTZJ 5.1B 5.1B MTZJ 18B 18B MTZJ 5.6B 5.6B MTZJ 20B 20B MTZJ 6.2B 6.2B MTZJ 22B 22B MTZJ 6.8B 6.8B MTZJ 24B 24B MTZJ 7.5B 7.5B MTZJ 27B 27B MTZJ 8.2B 8.2B MTZJ 30B 30B MTZJ 9.1B 9.1B MTZJ 33B 33B MTZJ 10B 10B MTZJ 36B 36B MTZJ 11B 11B MTZJ 39B 39B (１ )The zener voltage(Vz) is measured 40ms after power is supplied. (２ )The operating resistances(Zz,Zzk) are measured by superimposing a minute alternating current on the regulated current(Iz) TYP. Symbol Zener voltage ：Vz(V) Operating resistance ：Zz(Ω) Rising operating resistance：Zz(Ω) Reverse current ：IR(uA)

Rev.D 3/4 POWER DISSIPATION:Pd(mW) TIME:t(ms) PRSM-TIME CHARACTERISTICS TEMP.COEFFICIENCE:γz(％/℃) ZENER VOLTAGE：Vz(V) γz-Vz CHARACTERISTICS TIME:t(s) Rth-t CHARACTERISTICS TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) REVERSE SURGE MAXIMUM POWER:PRSM(W) 0.1 100 1000 0.001 0.01 0.1 1 10 100 1000 Rth(j-a) Rth(j-c) 1ms IM=10mA IF=100mA 300us time Mounted on epoxy board 100 200 300 400 500 600 0 25 50 75 100 125 150 100 1000 10000 0.001 0.01 0.1 1 10 100 t PRSM 0.001 0.01 0.1 0 5 10 15 20 25 30 35 40 3.6 2420181615131211109.18.2 7.5 5.6 6.8 6.2 5.14.7 4.3 3.9 3633 3922 3027 ZENER CURRENT:Iz(mA) ZENER VOLTAGE:Vz(V) Vz-Iz CHARACTERISTICS -0.08 -0.06 -0.04 -0.02 0.02 0.04 0.06 0.08 0.1 01 0 2 0 3 0 4 0 AMBIENT TEMPERATURE:Ta(℃) Pd-Ta CHARACTERISTICS TEMP.COEFFICIENCE:γz(mV/℃)

Rev.D 4/4 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS REVERSE CURRENT:IR (nA)REVERSE CURRENT:IR(nA) IR DISRESION MAP CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS Ct DISRESION MAP CAPACITANCE BETWEENTERMINALS:Ct(pF) ZENER CURRENT:Iz(mA) ZENER VOLTAGE:Vz(V) Vz-Iz CHARACTERISTICS DYNAMIC IMPEDANCE:Zz(Ω) ZENER CURRENT(mA) Zz-Iz CHARACTERISTICS Vz DISRESION MAP ZENER VOLTAGE:Vz(Ｖ) 0.0001 0.001 0.01 0.1 100 1000 10000 012345678 Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃ Ta=175℃ 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Ta=25℃ VR=8.0V n=30pcs AVE:0.120nA 100 1000 012345678 f=1MHz 100 AVE:54.1pF Ta=25℃ f=1MHz VR=0V n=10pcs 0.001 0.01 0.1 9.5 10 10.5 11 11.5 12 12.5 Ta=25℃ Ta=-25℃ Ta=75℃ Ta=125℃ Ta=175℃ 100 0.1 1 10 10.5 10.6 10.7 10.8 10.9 AVE:10.732V Ta=25℃ IZ=5mA n=30pcs

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