MTP50M1 NELLSEMI
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
FEATURES
UL recognition file number E320098 Universal 3-way terminals: snap-on, wire Typical IR less than 1.0 µA TYPICAL APPLICATIONS General purpose use in AC/DC bridge full wave Case: Molded GBPC Epoxy meets UL 94 V-O flammability rating PRIMARY CHARACTERRISTICS IF(AV) Terminals: Nickel plated on faston lugs , solderable per J-STD-002 and JESD22-B102. Polarity: As marked Weight : 29g (1.02 ozs) 50A VRRM 600V to 1600V 1.1V 5 µA 150ºC IFSM IR VF RoHS RoHS Page 1 of 3 Glass Passivated Triple-Phase Bridge Rectifier, 50A Nell High Power Products Compliant to RoHS wrap-around, or PCB mounting High surge current capability Low thermal resistance Solder dip 260°C, 40s rectification for big power supply, field supply for DC motor, industrial automation applications. MECHANICAL DATA Mounting Torque: 20 inches-lbs.max. TJ max. 550A MTP50M1 MTP5006M1 Thru MTP5016M1 Glass passivated chips www.nellsemi.com Unique molding body Front Rear All dimensions in millimeters 18.2±0.5 6±0.2 0.85±0.1 1±0.2 40±0.2 42±0.5 13.3±0.2 13.3±0.2 37.6±0.2 42±0.5 9±0.2 (TYP.) 26.6±0.2 ~ ~ ~ Φ5.5±0.2 Φ14±0.2 6.35±0.10 (TYP.)
MAJOR RATINGS AND CHARACTERISTICS (T = 25°C unless otherwise noted)A PARAMETER V V SYMBOL MTP50..M1 UNIT 420 560 700 840 600 800 1000 1200 1600 06 1210 16 1120 600 800 1000 1200 1600 V Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified output current (Fig.1), T =85 °CC Peak forward surge current single sine-wave superimposed on rated load Rating (non-repetitive, for t greater than 1 ms and less than 10 ms) for fusing RMS isolation voltage from case to leads Operating junction storage temperature range VRRM VRMS IFSM VDC IF(AV) VISO 2I t T ,TJ STG 2500 1510 -55 to 150 550 2A s A A V ºC ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)A PARAMETER V µA SYMBOL MTP50..M1 UNIT 0806 1210 16 Maximum instantaneous forward drop per diode Maximum reverse DC current at rated DC blocking Typical junction capacitance per diode VF IR CJ 300 1000 1.1 pF voltage per diod TEST CONDITIONS I = 25AF T = 25°CA 4V, 1MHz T = 150 °CA THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted)A PARAMETER °C/W SYMBOL MTP50..M1 UNIT 0806 1210 16 Typical thermal resistance (1) With heatsink (1)RθJC 0.8 (2) Bolt down on heatsink with silicone thermal compound between bridge a nd mounting surface for maximum heat transfer with Notes M5 screw 1 - Module type: 3 phase Bridge 2 - Current rating: I 3 - Voltage code x 10: V F (AV) RRM Device code ORDERING INFORMATION TABLE Page 2 of 3www.nellsemi.com MTP 50 10 RoHS RoHS Nell High Power Products MTP50M1
Fig.1 Forward Current Derating Curve Fig.2 T ypical Forward Characteristics Fig.3 Max Non-Repetitive Peak Surge Current Fig.4 Transient thermal impedance 750 600 450 300 150 10010 Pdak fwd surge current - l (A)FSM Number of cycles at 60Hz Zth(j-C) 1.0 0.5 0.001 0.01 0.1 1.0 10 100 Square wave pulse duration (s) Transient thermal impedance - R (°C/W)thjc Average forward current - l (A)F Case temperature - T (°C)C lnstantaneous forward voltage - V (V)F lnstantaneous forward current - l (A)F Mounted on a 220x220x50mm Al plate heatsink Resistive or Inductive load 0 50 100 150 max. typ. Page 3 of 3www.nellsemi.com RoHS RoHS Nell High Power Products MTP50M1