MTP3N55 ETC1
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Technical content
SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 TYPE: MTP3N55 PH: (561) 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING: Drain – Source Voltage VDSS 550 Vdc Drain – Gate Voltage VDGR 550 Vdc Drain Current – Continuous ID 3.0 Adc Drain Current – Pulsed IDM Adc Gate – Source Voltage VGS ±20 Vdc Power Dissipation PD Watts Inductive Current IL Adc Operating and Storage Temperature TJ & Tstg -65 to +150 Lead Temperature From Case TL 275 ELECTRICAL CHARACTERISTICS TA @ 25°°C Parameters Symbol Test Conditions Min Typ Max Unit Drain Source Breakdown Voltage BVDSS ID = .25mA 550 Vdc Gate Threshold Voltage VGS(th) ID = 1.0mA ID = 1.0mA, TJ = 100°C 2.0 1.5 4.5 4.0 Vdc Gate – Body Leakage Current IGSS VGS = 20V 100 nA Zero Gate Voltage Drain Current IDSS VDS = 550V VDS = 440V, TJ = 125°C 0.2 1.0 mA mA On State Drain Current ID(on) Adc Drain Source On Resistance rDS(on) ID = 1.5A, VGS = 10V, 2.5 Ohms Forward Transconductance gFS ID = 1.5A, VDS = 15V, 1.5 mhos Drain-Source On- Voltage VDS(on) ID = 3.0A VGS = 10V ID = 1.5A, VGS = 10V TJ = 100°C 9.0 7.5 Vdc Vdc Drain Source On- Voltage VDS(on) Vdc Input Capacitance Ciss 1000 pF Output Capacitance Coss 300 pF Reverse Transfer Capacitance Crss VDS = 25V, f = 1 MHz pF Page 1 of 2
TYPE:MTP3N55 Drain Source Diode Characteristics Symbol Min Typ Max Units Forward On Voltage VSD 1.1 Vdc Reverse Recovery Time trr 165 ns Forward Turn-On Time IS =3.0A ton ns Total Gate Charge Qg nC Gate – Source Charge Qgs 8.0 nC Gate – Drain Charge VDS=440V, ID=3.0A, VDS=10V Qgd 8.0 nC Switching Characteristics Symbol Min Typ Max Units Turn-On Time ton Turn-Off Time toff Delay Time (Turn On) td(on) ns Rise Time tr 100 ns Delay Time (Turn Off) td(off) 180 ns Fall Time VDD = 25V, ID = 1.5A Rgen = 50Ω tf ns Thermal Characteristics Symbol Units Junction To Case RθJC °C/W Junction To Ambient RθJA 1.67 62.5 °C/W Internal Package Inductance Symbol Typ Max Units Internal Drain Inductance Ld 3.5 nH Internal Source Inductance Ls 7.5 nH Page 2 of 2