MTP3N50E ISC

Document overview

  • Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 2

Technical content

iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark1 iscN-ChannelMOSFETTransistor MTP3N50E

  • FEATURES
  • WithTO-220 packaging
  • Highspeed switching
  • Veryhigh commutation ruggedness
  • Easytouse
  • 100% avalanchetested
  • MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
  • APPLICATIONS
  • PFCstages
  • PopularAC-DCapplications
  • Powersupply
  • Switching applications
  • ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 500 V VGSS Gate-SourceVoltage ±20 V ID DrainCurrent-Continuous 3 10 A IDM DrainCurrent-SinglePulsed 10 A PD TotalDissipation 50 W Tj OperatingJunctionTemperature -65~150 ℃ Tstg StorageTemperature -65~150 ℃
  • THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 2.5 ℃/W Rth(ch-a) Channel-to-ambientthermalresistance 62.5 ℃/W

iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark2 iscN-ChannelMOSFETTransistor MTP3N50E ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=0.25mA 500 V VGS(th) GateThresholdVoltage VDS=±20V;ID=0.25mA 2 4 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=1.5A 2.4 3.0 Ω IGSS Gate-SourceLeakageCurrent VGS= ±20V;VDS=0V ±0.1 μA IDSS Drain-SourceLeakageCurrent VDS=500V;VGS=0V;Tc=25℃ VDS=400V;VGS=0V;Tc=150℃ 0.25 1.0 mA VSDF Diodeforwardvoltage ISD=3A,VGS =0V 1.5 V