MT75DT16L1 LEIDITECH
Document overview
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- PDF pages: 5
Technical content
Features
Blocking voltage:800 to 1 00V Three Phase Bridge and a Thyristor Isolated Module package
Applications
Inverter for AC or DC motor control Current stabilized power supply Switching power supply TYPE VRRM /VDRM VRSM MT75DT08L1 MT75DT12L1 MT75DT16L1 800V 1200V 1600V 900V 1300V 1700V Circuit 1 2 5 4 3 Symbol Item Conditions Values Units VFM Forward Voltage Drop, max. T=25℃ IF =100A 1.40 V IRRM Repetitive Peak Reverse Current, max. Tvj =25℃ VRD=VRRM Tvj =150℃ VRD=VRRM ≤0.5 mA mA 2012 www.leiditech.com SHANGHAI LEIDITECH ELECTRONICS CO.,LTD 上海雷卯电子科技有限公司
Document Number:MT75DT16L1 ◆Thyristor Maximum Ratings Electrical and Thermal Characteristics Symbol Item Conditions Values Units Min. Typ. Max. VTM Peak On-State Voltage, max. T=25℃ IT =100A 1.30 V IRRM/IDRM Repetitive Peak Reverse Current, max. / Repetitive Peak Off-State Current, max. TVJ=TVJM ,VR=VRRM ,VD =VDRM 20 mA VGT Gate Trigger Voltage, max. TVJ =25℃ , VD =6V 3 V IGT Gate Trigger Current, max. TVJ =25℃ , VD =6V 150 mA Rth(j-c) Thermal Impedance, max. Junction to Case 0.30 ℃/W Rth(c-s) Thermal Impedance, max. Case to Heatsink 0.10 ℃/W Symbol Item Conditions Values Units ITAV Average On-State Current Tc=99℃, Single Phase half wave 180o conduction 75 A ITSM Surge On-State Current TVJ=45℃ t=10ms (50Hz), sine VR=0 920 A i2t Circuit Fusing Consideration 4200 A2s Tvj Operating Junction Temperature -40 to +125 ℃ Tstg Storage Temperature -40 to +125 ℃ Mt Mounting Torque To terminals(M5) 3± 15% Nm Ms To heatsink(M5) 3± 15% Nm di/dt Critical Rate of Rise of On-State Current TVJ=TVJM, VD=1/2VDRM ,IG =100mA diG/dt=0.1A/μs 150 A/μs dv/dt Critical Rate of Rise of Off-State Voltage, min. TJ=TVJM,VD=2/3VDRM,linear voltage rise 500 V/μs 2012 www.leiditech.com SHANGHAI LEIDITECH ELECTRONICS CO.,LTD 上海雷卯电子科技有限公司
Document Number:MT75DT16L1 Performance Curves Fig1. Power dissipation Fig2. Forward Current Derating Curve Fig3. Transient thermal impedance Fig4. Max Non-Repetitive Forward Surge Current Fig5. Forward Characteristics 0.001 t 0.01 0.1 1.0 10 S 100 0.40 ℃/ W 0.20 Zth(j-C) 1 10 cycles 100 50HZ 2000 A 1000 1000 A 100 IF max. Tj=
0 Tc 50 100 ℃ 150
A ID Fig 6. SCR Power dissipation Single phase half wave Tj=25℃ start P er one element Three phase 0 I D 20 40 60 A 80 250 W 200 150 100 Pvtot Three phase
0 I TAV 20 40 60 A 80
W PTAV 2012 www.leiditech.com SHANGHAI LEIDITECH ELECTRONICS CO.,LTD 上海雷卯电子科技有限公司
Document Number:MT75DT16L1 Average Gate Power (3W) Peak Gate Power (10W) Fig10. Gate trigger Characteristics Fig7. SCR Forward Current Derating Curve Fig8. SCR Transient thermal impedance Fig . SCR Forward Characteristics max. A ITAVM 0.001 t 0.01 0.1 1.0 10 S 100 0.50 / W 0.25 1000 A 100 IT Tj=25℃ Zth(j-C) I G mA Peak Forward Gate Voltage (10V) 100 V VG 0.1 Maximum Gate Non-Trigger Voltage 25℃ -10℃ 135℃ Peak Gate Current (3A) 2012 www.leiditech.com SHANGHAI LEIDITECH ELECTRONICS CO.,LTD 上海雷卯电子科技有限公司
Document Number:MT75DT16L1 Package Outline Information CASE: L1 Dimensions in mm 2012 www.leiditech.com SHANGHAI LEIDITECH ELECTRONICS CO.,LTD Tel: +86- 021 50828806 Fax: +86- 021 50477059-8008 Email: sale1@leiditech.com Website: http://www.leiditech.com SHANGHAI LEIDITECH ELECTRONICS CO.,LTD 上海雷卯电子科技有限公司