MT160CB16T2 LEIDITECH
Document overview
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Technical content
Features
International standard package High Surge Capability Glass passivated chip Simple Mounting Heat transfer through aluminum oxide DBCceramic isolated metal baseplate TYPE VRRM/VDRM VRSM MT160CB08T2 MT160CB12T2 MT160CB16T2 800V 1200V 1600V 900V 1300V 1700V
Applications
M otor C ontrol and Drives H eat and temperature control Circuit 1 32 Symbol Item Conditions Values Units Min. Typ. Max. VFM Forward Voltage Drop, max. T=25℃ IF =500A 1.70 V IRRM Repetitive Peak Reverse Current, max. Tvj =25℃ VRD=VRRM Tvj =125℃ VRD=VRRM ≤0.5 mA mA 2012 www.leiditech.com SHANGHAI LEIDITECH ELECTRONICS CO.,LTD 上海雷卯电子科技有限公司
Document Number:MT160CB16T2 ◆Thyristor Maximum Ratings Thermal Characteristics Symbol Item Conditions Values Units Rth(j-c) Thermal Impedance, max. Junction to Case 0.17 ℃/W Rth(c-s) Thermal Impedance, max. Case to Heatsink 0.10 ℃/W
Electrical Characteristics
Symbol Item Conditions Values Units ITAV Average On-State Current Sine 180o;Tc=85℃ 160 A ITSM Surge On-State Current TVJ =45℃ t=10ms, sine TVJ =125℃ t=10ms, sine 5400 5000 A i2t Circuit Fusing Consideration TVJ =45℃ t=10ms, sine TVJ =125℃ t=10ms, sine 145000
125000 A2s
Tvj Operating Junction Temperature -40 to +130 ℃ Tstg Storage Temperature -40 to +125 ℃ Mt Mounting Torque To terminals(M6) 3±15% Nm Ms To heatsink(M6) 5±15% Nm di/dt Critical Rate of Rise of On-State Current TVJ= TVJM , 2/3VDRM ,IG =500mA Tr<0.5us,tp>6us 200 A/us dv/dt Critical Rate of Rise of Off-State Voltage, min. TJ=TVJM ,2/3VDRM linear voltage rise 1000 V/us a Maximum allowable acceleration 50 m/s2 Symbol Item Conditions Values Units Min. Typ. Max. VTM Peak On-State Voltage, max. T=25℃ IT =500A 1.70 V IRRM/IDRM Repetitive Peak Reverse Current, max. / Repetitive Peak Off-State Current, max. TVJ=TVJM ,VR=VRRM ,VD= VDRM 40 mA VTO On state threshold voltage For power-loss calculations only (TVJ =125℃) 0.85 V rT Value of on-state slope resistance. max TVJ =TVJM 1.5 mΩ VGT Gate Trigger Voltage, max. TVJ =25℃ , VD =6V 3 V IGT Gate Trigger Current, max. TVJ =25℃ , VD =6V 150 mA VGD Non-triggering gate voltage, max. TVJ=125℃,VD =2/3VDRM 0.25 V IGD Non-triggering gate current, max. TVJ =125℃, VD =2/3VDRM 10 mA IL Latching current, max. TVJ =25℃ , RG = 33 Ω 300 1000 mA IH Holding current, max. TVJ =25℃ , VD =6V 150 400 mA tgd Gate controlled delay time TVJ=25℃, IG=1A, diG/dt=1A/us 1 us tq Circuit commutated turn-off time TVJ =TVJM 100 us 2012 www.leiditech.com SHANGHAI LEIDITECH ELECTRONICS CO.,LTD 上海雷卯电子科技有限公司
Document Number:MT160CB16T2 Performance Curves Fig1. Power dissipation Fig2.Forward Current Derating Curve
0 I TAV 50 100 150 A 200
W 200 100 PTAV rec.30 rec.60 rec.120 sin.180 DC Fig3. Transient thermal impedance Fig4. Max Non Repetitive Forward Surge Current Fig5. Forward Characteristics 0.001 t 0.01 0.1 1 10 S 100 0.30 ℃/ W 0.1 Z th(j C Zth(j-S) 10 100 ms 1000 50HZ 6000 A 3000 0 V TM 0.5 1.0 1.5 V 2.0 600 A 400 200 IT max. Typ. 125℃ DC sin.180 rec.120 rec.60 rec.30 ITAVM 300 A 240 180 120
0 Tc 50 100 ℃ 130
25℃ - - -125℃ 2012 www.leiditech.com SHANGHAI LEIDITECH ELECTRONICS CO.,LTD 上海雷卯电子科技有限公司
Document Number:MT160CB16T2 Package Outline Information CASE: T2 Dimensions in mm Fig6. Gate trigger Characteristics 1/2·MT160CB16T2 VGD125℃ IGD125℃ IGT VGT 20V;20Ω 150W(0.1ms) 100W(0.5ms) 50W(8ms) PG(tp) 0.001 I G 0.01 0.1 1 10 A 10 0 100 V VG 0.1 1.1 -40℃ 25℃ 125℃ T vj 2012 www.leiditech.com SHANGHAI LEIDITECH ELECTRONICS CO.,LTD Tel: +86- 021 50828806 Fax: +86- 021 50477059-8008 Email: sale1@leiditech.com Website: http://www.leiditech.com SHANGHAI LEIDITECH ELECTRONICS CO.,LTD 上海雷卯电子科技有限公司