MSTP110 NELLSEMI
Document overview
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Technical content
SEMICONDUCTOR MSTP110 Series RoHS RoHS
FEATURES
Small volume, light weight Small thermal resistance Three-phase half-controlled bridge rectifier, 110A
APPLICATIONS
Power supply for DC power device Input rectifier for PWM converter Low temperature rise MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS IT(AV) or IF(AV) 85 ºC A ITSM, IFSM
50 HZ 1150
60 H 1230z
50 H 6600z
60 H 6280z
- 40 to 125 TJ 110 C(~) D(~) E(~) A(+) B(-) ºC Nell High Power Products Glass-passivated chips Low forward voltage drop 十字六角螺絲M6x10 C~ D~ E~ A+ B- Dimensions in mm MSTP110-12 Thru MSTP 110-16
VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V VDRM, MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE, GATE OPEN CIRCUIT V IRRM, IDRM AT 125 ºC mA MSTP 10 12 1200 1300 1200 14 1400 1500 1400 16 1600 1700 1600 ON-STATE CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average on-state current (thyristors) IT(AV) 180º conduction, half sine wave, TC = 85 ºC 110 A Maximum average forward current (diodes) IF(AV) Maximum peak, one-cycle non-repetitive on-state or forward current ITSM t = 10 ms 1150 t = 8.3 ms 2Maximum I t for fusing T = 25 ºC, no voltage reappliedJ 6600 2A s t = 10 ms t = 8.3 ms Forward voltage VT I =200AT T = 25 ºCJ VF Maximum holding current IH T = 25 °C, anode supply = 6 V,J resistive load, gate open circuit 200 mA Maximum latching current IL T = 25 ºC, anode supply = 6 V, resistive loadJ 1230 6280 2l t I =200AF 1.7 V TRIGGERING VMaximum gate voltage required to trigger VGT Anode supply = 6 V resistive loadT = 25 ºCJ IGT mA 1.5 100 BLOCKING Maximum peak reverse and off-state leakage current at VRRM, VDRM IRRM, IDRM TJ = 125 °C, gate open circuit Maximum RMS insulation voltage VINS 50 Hz ,circuit to base, all terminals shorted 2500 (1 min) 3500 (1 s) V Maximum critical rate of rise of off-state voltage dV/dt T J = 125 °C, linear to 0.67 VDRM 1000 THERMAL AND MECHANICAL SPECIFICATIONS Junction operating and storage temperature range - 40 to 125 Maximum internal thermal resistance, junction to case per leg DC operation K/WTypical thermal resistance, case to heatsink per module Mounting torque ± 15 % A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. 5 Nm Approximate weight g oz. PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS T , TJ stg RthJC 0.65 0.108 265 9.3 ºC 10 mA V/µs 400 Page 2 of 2 or IFSM Mounting surface flat, smooth and greased .RthCS Maximum gate current required to trigger Nell High Power Products