MRF374 NJSEMI

Document overview

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Technical content

U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequen- cies from 470 - 860 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 28 volt transmitter equipment.

  • Typical Two-Tone Performance @ 860 MHz, 28 Volts, Narrowband Fixture Output Power- 100 Watts PEP Power Gain- 13.5dB Efficiency - 36% IMD--31 dBc
  • Typical Performance at 860 MHz, 28 Volts, Broadband Fixture Output Power - 100 Watts PEP Power Gain- 12 dB Efficiency - 36% IMD--34dBc
  • 100% Tested for Load Mismatch Stress at All Phase Angles with 5:1 VSWR @ 28 Vdc, 860 MHz, 100 Watts CW
  • Excellent Thermal Stability
  • Characterized with Differential Large-Signal Impedance Parameters MRF374 470 - 860 MHz, 100 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET CASE 375F-04 NI-650 MAXIMUM RATINGS Rating Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous (per Side) Total Device Dissipation @ Tc = 25''C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS ID PD Ts»g Tj Value ±20 270 1.25 -65 to +150 200 Unit Vdc Vdc Adc W W/°C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol R8JC Max 0.65 Unit °c/w NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. Quality Semi-Conductors

J U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted) TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage (per Side) (VQS = 0 Vdc, ID =1 jiA per Side) Zero Gate Voltage Drain Current (per Side) (VDS = 28 Vdc, VGS = 0 Vdc) Gate-Source Leakage Current (per Side) (VGS = 20 Vdc, VDS = 0 Vdc) V(BR)DSS IDSS 'ass Vdc |jAdc (iAdc ON CHARACTERISTICS Gate Threshold Voltage (per Side) (VDs = 1 0 V, ID = 200 nA per Side) Gate Quiescent Voltage (per Side) (VDS = 28 V, ID = 100 mA per Side) Drain-Source On-Voltage (per Side) (VGS = 1 0 V, ID = 3 A per Side) Forward Transconductance (per Side) (VDs = 10V, ID = 3 A per Side) VGS(th) VGS(Q) VDS(on) 9fs 2.2 3.5 4.2 0.56 2.8 0.8 Vdc Vdc Vdc S DYNAMIC CHARACTERISTICS (1> Input Capacitance (per Side) (VDS = 28 V, VGS = 0 V, f = 1 MHz) Output Capacitance (per Side) (VDS = 28 V, VGS = 0 V, f = 1 MHz) Reverse Transfer Capacitance (per Side) (VDS = 28 V, VGS = 0 V, f = 1 MHz) ciss Coss Crss 3.5 PF PF PF FUNCTIONAL CHARACTERISTICS, TWO-TONE TESTING <2> Common Source Power Gain (VDD = 28 Vdc, Pout = 100 W PEP, IDQ = 400 mA, f1 = 857 MHz, f2 = 863 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 100 W PEP, IDQ = 400 mA, f1 = 857 MHz, f2 = 863 MHz) Intermodulation Distortion (VDD = 2S Vdc, Pout = 100 W PEP, IDQ = 400 mA, f1 = 857 MHz, f2 = 863 MHz) Load Mismatch (VDD = 28 Vdc, Pout = 100 W CW, IDQ = 400 mA, f = 860 MHz, VSWR 5:1 at All Phase Angles of Test) Gps n IMD 12.5 -28 13.5 -31 dB dB No Degradation in Output Power TYPICAL TWO-TONE BROADBAND Common Source Power Gain (VDD = 28 Vdc, Pou, = 100 W PEP, IDQ = 500 mA, f1 = 857 MHz, f2 = 863 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 100 W PEP, IDQ = 500 mA, f1 = 857 MHz, f2 = 863 MHz) Intermodulation Distortion (VDD = 28 Vdc, Pout = 100 W PEP, IDQ = 500 mA, f1 = 857 MHz, f2 = 863 MHz) Gps n IMD -34 dB dB (1) Each side of device measured separately. (2) Measured in push-pull configuration.

Figure 1. Narrowband Component Layout