MMST2907A

UMT2907A_1 ROHM

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UMT2907A / SST2907A / MMST2907A Transistors Rev.B 1/4 PNP Medium Power Transistor (Switching) UMT2907A / SST2907A / MMST2907A zFeatures 1) BVCEO< -60V (IC=-10mA) 2) Complements the UMT2222A / SST2222A / MMST2222A. zPackage, marking and packaging specifications Part No. UMT2907A UMT3 R2F T106 3000 SST2907A SST3 R2F T116 3000 MMST2907A SMT3 R2F T146 3000 Packaging type Marking Code Basic ordering unit (pieces) zAbsolute maximum ratings (Ta=25°C) UMT2907A, SST2907A, MMST2907A Parameter Symbol V CBO VCEO VEBO IC Tj Tstg Limits −60 −60 −0.6 150 −55 to +150 Unit V V V A PC 0.2 W W ∗ ∗ Mounted on a 7 x 5 x 0.6mm ceramic substrate. SST2907A 0.35 Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature zDimensions (Unit : mm) UMT2907A SST2907A MMST2907A ROHM : UMT3 EIAJ : SC-70 ROHM : SST3 (1) Emitter (2) Base (3) Collector (1) Emitter (2) Base (3) Collector ROHM : SMT3 EIAJ : SC-59 (1) Emitter (2) Base (3) Collector zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions BVCBO BVCEO BVEBO ICBO IEBO −100 −100 V V V nA nA I C= −10µA IC= −10mA IE= −10µA VCB= −50V ICES −− 100 V CB= −30V VEB= −3V −− 2.6VBE(sat) −− 1.3 V −− 1.6 I C/IB= −500mA/ −50mAVCE(sat) −− 0.4 V IC/IB= −150mA/ −15mA IC/IB= −500mA/ −50mA IC/IB= −150mA/ −15mA − 300 hFE −−− −− V CE= −10V, IC= −0.1mA VCE= −10V, IC= −1mA VCE= −10V, IC= −10mA VCE= −10V, IC= −150mA −− VCE= −10V, IC= −500mA fT Cob MHz pF VCE= −20V, IE=50mA, f=100MHz VCB= −10V, f=100kHz Cib − 30 pF VEB= −2V, f=100kHz ton − 50 ns VCC= −30V, VBE(OFF)= −1.5V, IC= −150mA, IB1= −15mA td − 10 ns VCC= −30V, VBE(OFF)= −1.5V, IC= −150mA, IB1= −15mA VCC= −30V, VBE(OFF)= −1.5V, IC=− 150mA, IB1= −15mAtr − 40 ns VCC= −30V, IC= −150mA, IB1=IB2= −15mAtoff − 100 ns tstg − 80 ns VCC= −30V , IC= −150mA, IB1=IB2= −15mA VCC= −30V, IC= −150mA, IB1=IB2= −15mA tf −60 −60 100 100 100 200 −− 30 ns Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Base-emitter saturation voltage Collector-emitter saturation voltage DC current transfer ratio Transition frequency Collector output capacitance Emitter input capacitance Turn-on time Delay time Rise time Turn-off time Storage time Fall time

UMT2907A / SST2907A / MMST2907A Transistors Rev.B 2/4 zElectrical characteristic curves 100 100 5 1B=0µA 100 200 400 500 600 300 Ta=25˚C COLLECTOR CURRENT : IC (mA) COLLECTOR-EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter output characteristics 1.0 10 100 1000 0.8 0.6 0.2 1.2 1.0 1.4 1.8 1.6 0.4 BASE-EMITTER SATURATION VOLTAGE : VBE (sat) (V) COLLECTOR CURRENT : IC (mA) Ta=25˚C IC / IB=10 Fig.2 Base-emitter saturation voltage vs. collector current 0.1 10 1.0 100 1000 100 1000

10 DC CURRENT GAIN : hFE

COLLECTOR CURRENT : IC (mA) Fig.3 DC current gain vs. collector current ( I ) Ta=25˚C VCE=10V 0.1 10 1.0 100 1000 100 1000 COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( II ) Ta=125˚C Ta=25˚C Ta=−55˚C VCE=10V

UMT2907A / SST2907A / MMST2907A Transistors Rev.B 3/4 0.1 10 1.0 100 1000 100 1000

10 AC CURRENT GAIN : hFE

COLLECTOR CURRENT : IC (mA) Fig.5 AC current gain vs. collector current T a=25˚C VCE=10V f=1kHz 1.0 10 100 1000 0.2 0.3 0.1 COLLECTOR-EMITTER SATURATION VOLTAGE : VCE (sat) (V) COLLECTOR CURRENT : IC (mA) Fig.6 Collector-emitter saturation voltage vs. collector current Ta=25˚C IC / IB=10 1.0 10 100 1000 0.8 1.2 1.4 1.8 1.6 0.4 0.2 0.6 1.0 BASE-EMITTER ON VOLTAGE : VBE(on) (V) COLLECTOR CURRENT : IC (mA) Fig.7 Grounded emitter propagation characteristics Ta=25˚C VCE=10V 1 10 100 1000 100 1000 CURRENT GAIN-BANDWIDTH PRODUCT : fT (MHz) COLLECTOR CURRENT : IC (mA) Fig.8 Gain bandwidth product vs. collector current Ta=25˚C VCE=10V 1 10 100 1000 100 0.1COLLECTOR-EMITTER VOLTAGE : VCE(V) COLLECTOR CURRENT : IC (mA) Fig.9 Gain bandwidth product Ta=25˚C 100MHz 200MHz 200MHz 300MHz 250MHz 0.1 1 10 100 100 CAPACITANCE (pF) REVERSE BIAS VOLTAGE (V) Fig.10 Input/output capacitance vs. voltage Ta=25˚C f=1MHz Cib Cob 1 10 100 1000 100 1000

10 TURN ON TIME : ton (ns)

COLLECTOR CURRENT : IC (mA) Fig.11 Turn-on time vs.collector current Ta=25˚C IC / IB=10 VCC=30V 10V 1 10 100 1000 100 500

10 RISE TIME : tr (ns)

COLLECTOR CURRENT : IC (mA) Fig.12 Rise time vs. collector current Ta=25˚C VCC=30V IC / IB=10

UMT2907A / SST2907A / MMST2907A Transistors Rev.B 4/4 1 10 100 1000 100 1000

10 STORAGE TIME : ts (ns)

COLLECTOR CURRENT : IC (mA) Fig.13 Storage time vs. collector current Ta=25˚C VCC=30V IC=10IB1=10IB2 1 10 100 1000 100 1000

10 FALL TIME : tf (ns)

COLLECTOR CURRENT : IC (mA) Fig.14 Fall time vs. collector current Ta=25˚C VCC=30V IC=10IB1=10IB2

No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. Appendix1-Rev2.0 Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System THE AMERICAS / EUPOPE / ASIA / JAPAN Contact us : webmaster@ rohm.co.jpwww.rohm.com Copyright © 2007 ROHM CO.,LTD. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. 21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix