MMST2907

UMT2907A ROHM

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UMT2907A / SST2907A / MMST2907A / PN2907A Transistors PNP Medium Power Transistor (Switching) UMT2907A / SST2907A / MMST2907A / PN2907A !Features 1) BVCEO< -60V (IC=-10mA) 2) Complements the UMT2222A / SST2222A / MMST2222A / PN2222A. !!!!Package, marking and packaging specifications Part No. UMT2907A UMT3 R2F T106 3000 SST2907A SST3 R2F T116 3000 MMST2907A SMT3 R2F T146 3000 PN2907A TO-92 T93 3000 Packaging type Marking Code Basic ordering unit (pieces) !!!!Absolute maximum ratings (Ta=25°C) UMT2907A, SST2907A, MMST2907A PN2907A Parameter Symbol V CBO VCEO VEBO IC Tj Tstg Limits -60 -60 -0.6 150 -55~+150 Unit V V V A PC 0.2 W 0.625 Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature !!!!External dimensions (Units : mm) UMT2907A SST2907A MMST2907A PN2907A ROHM : UMT3 EIAJ : SC-70 ROHM : SST3 (1) Emitter (2) Base (3) Collector (1) Emitter (2) Base (3) Collector ROHM : SMT3 EIAJ : SC-59 (1) Emitter (2) Base (3) Collector ROHM : TO-92 EIAJ : SC-43 (1) Emitter (2) Base (3) Collector 0~0.1 0.2Min. 2.4±0.2 1.3 0.95 0.45±0.1 0.15 0.4 2.9±0.2 1.9±0.2 0.95 0.95 +0.2 −0.1 −0.1 +0.2 +0.1 −0.06+0.1 −0.05 (2)(1) (3) 0~0.1 2.8±0.2 1.6 0.3~0.6 1.1 0.8±0.1 0.15 0.4 2.9±0.2 1.9±0.2 0.95 0.95 +0.2 −0.1 −0.1 +0.2 +0.1 −0.06+0.1 −0.05 (2)(1) (3) 0~0.1 (2)(1) (3) 0.1~0.4 2.1±0.1 1.25±0.1 0.9±0.1 0.2 0.7±0.1 0.15±0.050.3 2.0±0.2 1.3±0.1 0.65 0.65 +0.1 4.8±0.2(12.7Min.) 4.8±0.2 3.7±0.2 5 0.45±0.1 2.3 0.5±0.1 2.5+0.3 −0.1 (1) (2) (3) 2.5Min. All terminals have same dimensions All terminals have same dimensions All terminals have same dimensions

UMT2907A / SST2907A / MMST2907A / PN2907A Transistors !!!!Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions BVCBO BVCEO BVEBO ICBO IEBO −100 −100 V V V nA nA I C=10µA IC=10mA IE=10µA VCB=−50V ICES −− 100 V CB=−30V VEB=−3V −− 2.6VBE(sat) −− 1.3 V −− 1.6 I C/IB=−500mA/−50mAVCE(sat) −− 0.4 V IC/IB=−150mA/−15mA IC/IB=−500mA/−50mA IC/IB=−150mA/−15mA − 300 hFE −−− −− V CE=−10V, IC=−0.1mA VCE=−10V, IC=−1mA VCE=−10V, IC=−10mA VCE=−10V, IC=−150mA −− VCE=−10V, IC=−500mA fT Cob MHz pF VCE=−20V, IC=−50mA, f=100MHz VCB=−10V, f=100kHz Cib − 30 pF VEB=−2V, f=100kHz ton − 50 ns VCC=−30V, VBE(OFF)=−1.5V, IC=−150mA, IB1=−15mA td − 10 ns VCC=−30V, VBE(OFF)=−1.5V, IC=−150mA, IB1=−15mA VCC=−30V, VBE(OFF)=−1.5V, IC=−150mA, IB1=−15mAtr − 40 ns VCC=−30V, IC=−150mA, IB1=IB2=−15mAtoff − 100 ns tstg − 80 ns VCC=−30V , IC=−150mA, IB1=IB2=−15mA VCC=−30V, IC=−150mA, IB1=IB2=−15mA tf −60 −60 0.6 100 100 100 200 −− 30 ns Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Base-emitter saturation voltage Collector-emitter saturation voltage DC current transfer ratio Transition frequency Collector output capacitance Emitter input capacitance Turn-on time Delay time Rise time Turn-off time Storage time Fall time !!!!Electrical characteristic curves 100 100 5 1B=0µA 100 200 400 500 600 300 Ta=25˚C COLLECTOR CURRENT : IC (mA) COLLECTOR-EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter output characteristics 1.0 10 100 1000 0.8 0.6 0.2 1.2 1.0 1.4 1.8 1.6 0.4 BASE-EMITTER SATURATION VOLTAGE : VBE (sat) (V) COLLECTOR CURRENT : IC (mA) Ta=25˚C IC / IB=10 Fig.2 Base-emitter saturation voltage vs. collector current 0.1 10 1.0 100 1000 100 1000

10 DC CURRENT GAIN : hFE

COLLECTOR CURRENT : IC (mA) Fig.3 DC current gain vs. collector current ( I ) Ta=25˚C VCE=10V

UMT2907A / SST2907A / MMST2907A / PN2907A Transistors 0.1 10 1.0 100 1000 100 1000 COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( II ) Ta=125˚C Ta=25˚C Ta=−55˚C VCE=10V 0.1 10 1.0 100 1000 100 1000

10 AC CURRENT GAIN : hFE

COLLECTOR CURRENT : IC (mA) Fig.5 AC current gain vs. collector current T a=25˚C VCE=10V f=1kHz 1.0 10 100 1000 0.2 0.3 0.1 COLLECTOR-EMITTER SATURATION VOLTAGE : VCE (sat) (V) COLLECTOR CURRENT : IC (mA) Fig.6 Collector-emitter saturation voltage vs. collector current Ta=25˚C IC / IB=10 1.0 10 100 1000 0.8 1.2 1.4 1.8 1.6 0.4 0.2 0.6 1.0 BASE-EMITTER ON VOLTAGE : VBE(on) (V) COLLECTOR CURRENT : IC (mA) Fig.7 Grounded emitter propagation characteristics Ta=25˚C VCE=10V 1 10 100 1000 100 1000 CURRENT GAIN-BANDWIDTH PRODUCT : fT (MHz) COLLECTOR CURRENT : IC (mA) Fig.8 Gain bandwidth product vs. collector current Ta=25˚C VCE=10V 1 10 100 1000 100 0.1COLLECTOR-EMITTER VOLTAGE : VCE(V) COLLECTOR CURRENT : IC (mA) Fig.9 Gain bandwidth product Ta=25˚C 100MHz 200MHz 200MHz 300MHz 250MHz

UMT2907A / SST2907A / MMST2907A / PN2907A Transistors 0.1 1 10 100 100 CAPACITANCE (pF) REVERSE BIAS VOLTAGE (V) Fig.10 Input/output capacitance vs. voltage Ta=25˚C f=1MHz Cib Cob 1 10 100 1000 100 1000

10 TURN ON TIME : ton (ns)

COLLECTOR CURRENT : IC (mA) Fig.11 Turn-on time vs.collector current Ta=25˚C IC / IB=10 VCC=30V 10V 1 10 100 1000 100 500

10 RISE TIME : tr (ns)

COLLECTOR CURRENT : IC (mA) Fig.12 Rise time vs. collector current Ta=25˚C VCC=30V IC / IB=10 1 10 100 1000 100 1000

10 STORAGE TIME : ts (ns)

COLLECTOR CURRENT : IC (mA) Fig.13 Storage time vs. collector current Ta=25˚C VCC=30V IC=10IB1=10IB2 1 10 100 1000 100 1000

10 FALL TIME : tf (ns)

COLLECTOR CURRENT : IC (mA) Fig.14 Fall time vs. collector current Ta=25˚C VCC=30V IC=10IB1=10IB2