MMST2222A COMCHIP
Document overview
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Technical content
Features
-Power dissipation O PCM : 0.2W (TA=25 C) -Collector current ICM : 0.6A -Collector-base voltage V(BR)CBO : 75V -Operating and storage junction temperature rangeO O TJ, TSTG : -55 C to +150 C Marking: K3P Dimensions in inches and (millimeter) SOT-323 Base Emitter Collector Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Base-Emitter saturation voltage Collector-Emitter saturation voltage Transition frequency Delay time Storage time Rise time Fall time IC =10mA , IB=0 IE =10μA , IC=0 VCB=70V , IE=0 VCE=35V , IB=0 VEB=3V , IC=0 VCE=10V , IC=150mA VCE=10V , IC=1mA IC=500mA , IB=50mA IC=500mA , IB=50mA VCE=20V , IC=20mA f=100MHZ VCC=30V , IC=150mA VBE(off)=0.5V , IB1=15mA VCC=30V , IC=150mA IB1=IB2=15mA V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) fT td tr ts tf 0.1 0.1 300100 0.6 1.2 300 225 V V V µA µA µA V V MHZ nS nS nS nS 1 2 0.087 (2.20) 0.070 (1.8) 0.087 (2.20) 0.078 (2.00) 0.016 (0.40) 0.008 (0.20) 0.054 (1.35) 0.045 (1.15) 0.044 (1.10) 0.035 (0.90) 0.004 (0.10) min 0.004 (0.10) max 0.006 (0.15) 0.002 (0.05) 0.056 (1.40) 0.047 (1.20) Output capacitance CobVCB=10V , IE=0 f=1MHZ pF8
RATING AND CHARACTERISTIC CURVES (MMST2222A-G) General Purpose TransistorGeneral Purpose Transistor Page 2QW-BTR06 REV:A SMD Diodes Specialist Fig.1 Grounded Emitter Output Characteristics IC, Collector Current (mA) VCE, Collector-Emitter Voltage (V) 600 500 400 200 300 100 IB=0μA 5 10 100 Fig.2 Collector-Emitter Saturation Voltage vs. Collector Current VCE(SAT), Collector-Emitter Saturation Voltage (V) IC, Collector Current (mA) 1 10 100 1000 0.1 0.2 0.3 O TA=25 C IC/IB=10 Fig.3 DC Current Gain vs. Collector Current hFE, DC Current Gain IC, Collector Current (mA) 0.1 1.0 10 100 1000 100 1000 O TA=25 C VCE=10V VCE=1V Fig.4 DC Current Gain vs. Collector Current hFE, DC Current Gain IC, Collector Current (mA) 0.1 100 1000 1.0 10 100 1000 VCE=10V O TA=125 C O 25 C O -55 C Fig.5 AC Current gain vs. Collector Current hFE, AC Current Gain IC, Collector Current (mA) 0.1 100 1000 1.0 10 100 1000 O TA=25 C VCE=10V f=1KHz Fig.6 Base-Emitter Saturation Voltage vs. Collector Current VBE(SAT), Base-Emitter Saturation Voltage (V) IC, Collector Current (mA) 1.0 10 100 1000 0.4 0.8 1.2 1.6 1.8 O TA=25 C IC/IB=10 O TA=25 C
RATING AND CHARACTERISTIC CURVES (MMST2222A-G) General Purpose TransistorGeneral Purpose Transistor Page 3QW-BTR06 REV:A SMD Diodes Specialist Fig.8 Turn-on time vs. Collector Current ton, Turn-on Time (nS) IC, Collector Current (mA) 1.0 10 100 1000 100 1000 Fig.9 Rise Time vs. Collector Current tr, Rise Time (nS) IC, Collector Current (mA) 1.0 10 100 1000 100 500 Fig.10 Storage Time vs. Collector Current ts, Storage Time (nS) IC, Collector Current (mA) 100 1000 1.0 10 100 1000 Fig.11 Fall Time vs. Collector Current tf, Fall Time (nS) IC, Collector Current (mA) 100 1000 Fig.7 Grounded-Emitter Propagation Characteristics VBE(on), Base-Emitter Voltage (V) IC, Collector Current (mA) 1.0 10 100 1000 0.4 0.8 1.2 1.6 1.8 O TA=25 C VCE=10V O TA=25 C IC/IB=10 VCC=30V VCC=10V O TA=25 C VCC=30V IC/IB=10 O TA=25 C VCC=30V IC=10IB1=10IB2 O TA=25 C VCC=30V IC=10IB1=10IB2 1.0 10 100 1000 O TA=25 C f=1MHz Fig.12 Input/Output Capacitance vs. Voltage Capacitance (pF) Reverse Bias Voltage (V) 100 0.1 1.0 10 100 Cib Cob
RATING AND CHARACTERISTIC CURVES (MMST2222A-G) General Purpose TransistorGeneral Purpose Transistor Page 4QW-BTR06 REV:A SMD Diodes Specialist Fig.14 Gain Bandwidth product vs. Collector Current Current Gain-Bandwidth Product (MHz) IC, Collector Current (mA) 1.0 10 100 1000 100 1000 Fig.13 Gain Bandwidth Product 0.1 VCE, Collector-Emitter Voltage (V) IC, Collector Current (mA) 1.0 10 100 1000 1.0 100 250MHz 300MHz 250MHz200MHz 100MHz O TA=25 C O TA=25 C VICE=10V