UMT2222A_07 ROHM

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UMT2222A / SST2222A / MMST2222A Transistors Rev.A NPN Medium Power Transistor (Switching) UMT2222A / SST2222A / MMST2222A zFeatures 1) BVCEO > 40V (IC=10mA) 2) Complements the UMT2907A / SST2907A / MMST2907A. zPackage, marking, and packaging specifications Part No. UMT2222A UMT3 R1P T106 3000 SST2222A SST3 R1P T116 3000 MMST2222A SMT3 R1P T146 3000 Packaging type Marking Code Basic ordering unit (pieces) zAbsolute maximum ratings (Ta = 25°C) Parameter Symbol VCBO VCEO VEBO IC Tj Tstg Limits 0.6 0.35 150 −55 to +150 Unit V V V A W W PC 0.2 SST2222A UMT2222A,SST2222A, MMST2222A Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature ∗ When mounted on a 7 x 5 x 0.6 mm ceramic board zDimensions (Unit : mm) ROHM : UMT3 EIAJ : SC-70 (1) Emitter (2) Base (3) Collector ROHM : SST3 (1) Emitter (2) Base (3) Collector ROHM : SMT3 EIAJ : SC-59 (1) Emitter (2) Base (3) Collector UMT2222A SST2222A MMST2222A zElectrical characteristics (Ta = 25°C) Parameter Symbol Min. Typ. Max. Unit Conditions BVCBO BVCEO BVEBO ICBO IEBO 100 100 V V V nA nA I C =10µA IC =10mA IE =10µA VCB = 60V VEB = 3V −− 2VBE(sat) 0.6 − 1.2 V −− 1I C/IB =500mA/50mAVCE(sat) −− 0.3 V IC/IB =150mA/15mA IC/IB =500mA/50mA IC/IB =150mA/15mA 40 −− 50 −− 35 −− VCE =10V , IC =0.1mA VCE =10V , IC =1mA VCE =10V , IC =10mA VCE =1V , IC =150mA 100 − 300 V CE =10V , IC =150mA VCE =10V , IC =500mA fT Cob 300 MHz pF VCE =20V , IC =−20mA, f =100MHz VCB =10V , f =100kHz Cib −− 25 pF VEB =0.5V , f =100kHz td −− 10 ns VCC =30V , VBE(OFF) =0.5V , IC =150mA , IB1 =15mA VCC =30V , VBE(OFF) =0.5V , IC =150mA , IB1 =15mAtr −− 25 ns tstg −− 225 ns VCC =30V , IC =150mA , IB1 =−IB2 =15mA VCC =30V , IC =150mA , IB1 =−IB2 =15mA tf −− 60 ns Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Base-emitter saturation voltage Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Emitter input capacitance Delay time Rise time Storage time Fall time

UMT2222A / SST2222A / MMST2222A Transistors Rev.A zElectrical characteristic curves 100 100 5 IB=0µA 100 200 400 500 600 300 Ta=25°C COLLECTOR CURRENT : Ic(mA) COLLECTOR-EMITTER VOLTAGE : VCE(V) Fig.1 Grounded emitter output characteristics 0.1 10 1.0 100 1000 100 1000

10 DC CURRENT GAIN : hFE

COLLECTOR CURRENT : Ic(mA) Ta=25°C VCE=10V Fig.3 DC current gain vs. collector current(Ι) 1.0 10 100 1000 0.2 0.3 0.1 COLLECTOR EMITTER SATURATION VOLTAGE : VCE(sat)(V) COLLECTOR CURRENT : Ic(mA) Ta=25°C IC / IB=10 Fig.2 Collector-emitter saturation voltage vs. collector current 0.1 10 1.0 100 1000 100 1000 COLLECTOR CURRENT : Ic(mA) Ta=125°C VCE=10V 25°C −55°C Fig.4 DC current gain vs. collector current(ΙΙ) 0.1 10 1.0 100 1000 100 1000

10 AC CURRENT GAIN : hFE

COLLECTOR CURRENT : Ic(mA) Ta=25°C VCE=10V f=1kHz Fig.5 AC current gain vs. collector current 1.0 10 100 1000 0.8 1.2 1.8 1.6 0.4 BASE EMITTER SATURATION VOLTAGE : VBE(sat)(V) COLLECTOR CURRENT : Ic(mA) Ta=25°C IC / IB=10 Fig.6 Base-emitter saturation voltage vs. collector current

UMT2222A / SST2222A / MMST2222A Transistors Rev.A 1 10 100 1000 0.8 1.2 1.8 1.6 0.4 BASE EMITTER VOLTAGE : VBE(ON)(V) COLLECTOR CURRENT : Ic(mA) Ta=25°C VCE=10V Fig.7 Grounded emitter propagation characteristics 1.0 10 100 1000 100 1000

10 TURN ON TIME : ton(ns)

COLLECTOR CURRENT : Ic(mA) Ta=25°C IC / IB=10 VCC=30V 10V Fig.8 Turn-on time vs. collector current 1.0 10 100 1000 100 500

10 RISE TIME : tr(ns)

COLLECTOR CURRENT : Ic(mA) Ta=25°C VCC=30V IC / IB=10 Fig.9 Rise time vs. collector current 1.0 10 100 1000 100 1000

10 STORAGE TIME : Ts(ns)

COLLECTOR CURRENT : Ic(mA) Ta=25°C VCC=30V IC=10IB1=10IB2 Fig.10 Storage time vs. collector current 1.0 10 100 1000 100 1000

10 FALL TIME : tf(ns)

COLLECTOR CURRENT : Ic(mA) Ta=25°C VCC=30V IC=10IB1=10IB2 Fig.11 Fall time vs. collector current 0.1 1.0 10 100 100 CAPACITANCE(pF) REVERSE BIAS VOLTAGE(V) Ta=25°C f=1MHz Cib Cob Fig.12 Input / output capacitance vs. voltage 1 10 100 1000 100 0.1COLLECTOR-EMITTER VOLTAGE : VCE(V) COLLECTOR CURRENT : Ic(mA) Ta=25°C 100MHz 200MHz 250MHz 300MHz 250MHz Fig.13 Gain bandwidth product 1.0 10 100 1000 100 1000 10CURRENT GAIN-BANDWIDTH PRODUCT(MHz) COLLECTOR CURRENT : Ic(mA) Ta=25°C VCE=10V Fig.14 Gain bandwidth product vs. collector current

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