MMG3002NT1 40-3600 MHz, 20 dB, 21 dBm InGaP HBT GPA - Data Sheet
Document overview
- Manufacturer or author: Freescale Semiconductor
- PDF pages: 15
Technical content
Features
Frequency: 40- -3600 MHz P1dB: 21 dBm @ 900 MHz Small- -Signal Gain: 20 dB @ 900 MHz Third Order Output Intercept Point: 37.5 dBm @ 900 MHz Single Voltage Supply Internally Matched to 50 Ohms Cost- -effective SOT- -89 Surface Mount Plastic Package In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7- -inch Reel. SOT- -89 Table 1. Typical Performance(1) Table 2. Maximum Ratings Table 3. Thermal Characteristics Select Documentation/Application Notes - - AN1955. Freescale Semiconductor, Inc., 2004- -2008, 2012, 2014.All rights reserved.
Freescale Semiconductor, Inc. Table 4. Electrical Characteristics(VCC = 5.2 Vdc, 900 MHz, TA =2 5C, 50 ohm system, in Freescale Application Circuit) Table 5. Functional Pin Description
1 RFin
2 Ground
3 RFout/DC Supply
Table 6. ESD Protection Characteristics Table 7. Moisture Sensitivity Level Figure 1. Functional Diagram
Freescale Semiconductor, Inc.
50 OHM TYPICAL CHARACTERISTICS
Figure 2. Small- -Signal Gain (S21) versus Figure 3. Input/Output Return Loss versus Figure 4. Small- -Signal Gain versus Output
900 MHz
2140 MHz
Figure 5. P1dB versus Frequency Figure 6. Collector Current versus Collector Figure 7. Third Order Output Intercept Point
2600 MHz
Freescale Semiconductor, Inc. Figure 8. Third Order Output Intercept Point Figure 9. Third Order Output Intercept Point Figure 10. Third Order Intermodulation Distortion Figure 11. MTTF versus Junction Temperature Figure 12. Noise Figure versus Frequency Figure 13. Single- -Carrier W- -CDMA Adjacent
8 Vdc Supply with 25ΩDropping Resistor
Freescale Semiconductor, Inc.
50 OHM APPLICATION CIRCUIT: 40- -800 MHz
Figure 14. 50 Ohm Test Circuit Schematic Figure 15. S21, S11 and S22 versus Frequency Figure 16. 50 Ohm Test Circuit Component Layout Table 8. 50 Ohm Test Circuit Component Designations and Values Table 9. Supply Voltage versus R1 Values Note: To provide VCC = 5.2 Vdc and ICC = 110 mA at the device.
Freescale Semiconductor, Inc.
50 OHM APPLICATION CIRCUIT: 800- -3400 MHz
Figure 17. 50 Ohm Test Circuit Schematic Figure 18. S21, S11 and S22 versus Frequency Figure 19. 50 Ohm Test Circuit Component Layout Table 10. 50 Ohm Test Circuit Component Designations and Values
Freescale Semiconductor, Inc.
50 OHM APPLICATION CIRCUIT: 3400- -3600 MHz
Figure 20. 50 Ohm Test Circuit Schematic Figure 21. S21, S11 and S22 versus Frequency Figure 22. 50 Ohm Test Circuit Component Layout Table 11. 50 Ohm Test Circuit Component Designations and Values
- Tuning capacitor: Capacitor value and location on the transmission line are varied for different frequencies.
Freescale Semiconductor, Inc. Table 12. Common Emitter S- -Parameters(VCC =5 . 2V d c ,TA =2 5C, 50 Ohm System)
Freescale Semiconductor, Inc. Table 12. Common Emitter S- -Parameters(VCC =5 . 2V d c ,TA =2 5C, 50 Ohm System)(continued)
NOTR ECOMMENDED FORN E WD ESIGN NOT RECOMMENDED FOR NEW DESIGN MMG3002NT1 RF Device Data Freescale Semiconductor, Inc. PACKAGE DIMENSIONS
NOTR ECOMMENDED FORN E WD ESIGN NOT RECOMMENDED FOR NEW DESIGN RF Device Data Freescale Semiconductor, Inc. MMG3002NT1
NOTR ECOMMENDED FORN E WD ESIGN NOT RECOMMENDED FOR NEW DESIGN MMG3002NT1 RF Device Data Freescale Semiconductor, Inc.
NOTR ECOMMENDED FORN E WD ESIGN NOT RECOMMENDED FOR NEW DESIGN RF Device Data Freescale Semiconductor, Inc. MMG3002NT1 PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following resources to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF Power Amplifiers AN3100: General Purpose Amplifier and MMIC Biasing Software .s2p File For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to Software & Tools on the part’s Product Summary page to download the respective tool. FAILURE ANALYSIS At this time, because of the physical characteristics of the part, failure analysis is limited to electrical signature analysis. In cases where Freescale is contractually obligated to perform failure analysis (FA) services, full FA may be performed by third party vendors with moderate success. For updates contact your local Freescale Sales Office.
REVISION HISTORY
The following table summarizes revisions to this document. Revision Date Description 7 Mar. 2007 Corrected and updated Part Numbers in Tables 8, 10 and 11, Component Designations and Values, to RoHS compliant part numbers, pp. 6- -8 8 July 2007 Replaced Case Outline 1514- -01 with 1514- -02, Issue D, pp. 1, 12- -14. Case updated to add missing dimension for Pin 1 and Pin 3. 9 Mar. 2008 Removed Footnote 2, Continuous voltage and current applied to device, from Table 2, Maximum Ratings, p. 1 Corrected Fig. 13, Single- -Carrier W- -CDMA Adjacent Channel Power Ratio versus Output Powery-- a x i s (ACPR) unit of measure to dBc, p. 5 Corrected S- -Parameter table frequency column label to read “MHz” versus “GHz” and corrected frequency values from GHz to MHz, pp. 9, 10 10 Feb. 2012 Corrected temperature at which ThetaJC is measured from 25Ct o1 1 8C and added “no RF applied” to Thermal Characteristics table to indicate that thermal characterization is performed under DC test with no RF signal applied, p. 1 Table 6, ESD Protection Characteristics, removed the word “Minimum” after the ESD class rating. ESD ratings are characterized during new product development but are not 100% tested during production. ESD ratings provided in the data sheet are intended to beused as a guideline when handling ESD sensitive devices, p. 3 Removed ICC bias callout from applicable graphs and Table 12, Common Emitter S- -Parameters heading as bias is not a controlled value, pp. 4–10 Added .s2p File availability to Product Software, p. 15 11 Dec. 2012 Replaced the PCB Pad Layout drawing, the packageisometric and mechanical outline for Case 1514- -02 (SOT- -89) with Case 2142- -01 (SOT- -89) as a result of the device transfer from a Freescale wafer fab to an external GaAs wafer fab and new assembly site. The new assembly and test site’s SOT- -89 package has slight dimensional differences, pp. 1, 11- -14. Refer to PCN13337,GaAs Fab Transfer. Added Fig. 24, Product Marking, p. 11 12 Sept. 2014 Table 2, Maximum Ratings: updated Junction Temperature from 150C to 175C to reflect recent test results of the device, p. 1 Added Failure Analysis information, p. 14
NOTR ECOMMENDED FORN E WD ESIGN NOT RECOMMENDED FOR NEW DESIGN MMG3002NT1 RF Device Data Freescale Semiconductor, Inc. Information in this document is provided solely to enablesystem and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particularpurpose, nor does Freescale assume any liability arisingout of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/SalesTermsandConditions. Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc., respective owners. E 2004- -2008, 2012, 2014 Freescale Semiconductor, Inc. How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Document Number: MMG3002NT1 Rev. 12, 9/2014