MMFTP923KDMP HUIXIN

Document overview

  • Manufacturer or author: Provided By www.digicamel.com(free datasheet download site)
  • PDF pages: 7

Technical content

Features

  • Typical ESD Protection HBM Class 1B

Applications

  • Portable appliances
  • High speed switch
  • Battery management Absolute Maximum Ratings(at Ta = 25℃ unless otherwise specified) Thermal Characteristics 1) Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature TJ(MAX) = 150°C. 2) Limited by TJ(MAX), starting TJ = 25 °C, L = 0.1 mH, Rg = 25 Ω, -ID = 16.8 A, VGS = 8 V. 3) Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air. Classification Voltage Range(V) 0A < 125 0B 125 to < 250 1A 250 to < 500 1B 500 to < 1000 1C 1000 to < 2000 2 2000 to < 4000 3A 4000 to < 8000 3B ≥ 8000 Parameter Symbol Value Unit Drain-Source Voltage -V DS 20 V Gate-Source Voltage V GS ± 8 V Drain Current -I D 4.5 A Pulsed Drain Current 1) -IDM 20 A Avalanche Current -I AS 16.8 A Single Pulse Avalanche Energy 2) EAS 14.1 mJ Power Dissipation Tc = 25℃ Ta = 25℃ PD 7.8 1.47 W Operating Junction and Storage Temperature Range T j ,Tstg - 55 to + 150 ℃ Parameter Symbol Max. Unit Thermal Resistance from Junction to Case R θJC 10 ℃/W Thermal Resistance from Junction to Ambient 3 ) R θJA 90 ℃/W 12 3 6 5 4 123 45 6 Drain DrainQ1: 1. Sourse 2. Gate 6. Drain Q2: 4. Sourse 5. Gate 3. Drain DFN2020 Plastic Package 86-769-22857832 huixin@hxkj.hk Rev.01 Page 1 of 7

Characteristics at Ta = 25℃ unless otherwise specified Parameter Symbol Min. Typ. Max. Unit STATIC PARAMETERS Drain-Source Breakdown Voltage a t - ID = 250 µA -V(BR)DSS 20 - - V Drain-Source Leakage Current a t - VDS = 20 V -IDSS - - 1 µA Gate Leakage Current a t VGS = ± 4.5 V a t VGS = ± 8 V IGSS ± 3 ± 10 µA Gate-Source Threshold Voltage a t VDS = VGS, -ID = 250 µA -VGS(th) 0.4 - 1.0 V Drain-Source On-State Resistance a t - VGS = 4.5 V, -ID = 3.8 A a t - VGS = 2.5 V, -ID = 3.3 A a t - VGS = 1.8 V, -ID = 1 A a t - VGS = 1.5 V, -ID = 0.5 A RDS(on) 104 120 mΩ DYNAMIC PARAMETERS Forward Transconductance at -VDS = 10 V, -ID = 3.8 A gfs - 7 - S Gate Resistance at V GS = 0 V, VDS = 0 V, f = 1 MHz Rg - 4 - Ω Input Capacitance a t VGS = 0 V, -VDS = 10 V, f = 1 MHz Ciss - 960 - pF Output Capacitance a t VGS = 0 V, -VDS = 10 V, f = 1 MHz Coss - 140 - pF Reverse Transfer Capacitance a t VGS = 0 V, -VDS = 10 V, f = 1 MHz Crss - 125 - pF Gate charge total a t - VDS = 10 V, -ID = 3.8 A, -VGS = 4.5 V a t - VDS = 10 V, -ID = 3.8 A, -VGS = 2.5 V Qg 10.5 6.6 nC Gate to Source Charge a t - VDS = 10 V, -ID = 3.8 A, -VGS = 4.5 V Qgs - 0.9 - nC Gate to Drain Charge a t - VDS = 10 V, -ID = 3.8 A, -VGS = 4.5 V Qgd - 3.5 - nC Turn-On Delay Time a t - VDD = 10 V, -ID = 3.8 A, -VGS = 4.5 V, Rg = 4.7 Ω td(on) - 18.5 - ns Turn-On Rise Time at -V DD = 10 V, -ID = 3.8 A, -VGS = 4.5 V, Rg = 4.7 Ω tr - 63 - ns Turn-Off Delay Time at -VDD = 10 V, -ID = 3.8 A, -VGS = 4.5 V, Rg = 4.7 Ω td(off) - 21 - ns Turn-Off Fall Time at -VDD = 10 V, -ID = 3.8 A, -VGS = 4.5 V, Rg = 4.7 Ω tf - 9.5 - ns Body-Diode PARAMETERS Drain-Source Diode Forward Voltage at -I S = 1 A, VGS = 0 V -VSD - - 1.2 V Body-Diode Continuous Current -IS - - 4.5 A Body Diode Reverse Recovery Time a t - IS = 3.8 A, -VDD = 20 V, di/dt = 100 A / µs trr - 12 - ns Body Diode Reverse Recovery Charge a t - IS = 3.8 A, -VDD = 20 V, di/dt = 100 A / µs Qrr - 3.8 - nC 86-769-22857832 huixin@hxkj.hk Rev.01 Page 2 of 7

Electrical Characteristics Curves Fig. 6 Typical Body-Diode Forward Characteristics Fig. 3 on-Resistance vs. Gate Voltage Fig. 4 on-Resistance vs.Tj Fig. 5 Drain Source vs. on-Resistance Fig. 2 Typical Transfer Characteristics Fig. 1 Typical Output Characteristics 86-769-22857832 huixin@hxkj.hk Rev.01 Page 3 of 7

Electrical Characteristics Curves Fig. 9 Typical Junction Capacitance Fig. 10 Gate Charge Fig. 8 Gate Threshold Variation vs. Tj Fig. 11 Drain-Source Leakage Current vs. Tj Fig. 7 V(BR)DSS vs. Junction Temperature Fig. 12 Safe Operation Area 86-769-22857832 huixin@hxkj.hk Rev.01 Page 4 of 7

Electrical Characteristics Curves Fig. 13 Normalized Maximum Transient Thermal Impedance(zϴJA) 86-769-22857832 huixin@hxkj.hk Rev.01 Page 5 of 7

Fig.1-1 Switching times test circuit Fig.1-2 Switching Waveform Fig.2-1 Gate charge test circuit Fig.2-2 Gate charge waveform Fig.3-1 Avalanche test circuit Fig.3-2 Avalanche waveform 86-769-22857832 huixin@hxkj.hk Rev.01 Page 6 of 7

Package Outline (Dimensions in mm) DFN2020 UNIT A A1 b D E e L K P P1 mm 0.55 0.65 0.04 0.25 0.35 1.9 2.1 1.9 2.1 0.9 1.1 0.2 0.3 0.65 typ. 0.57 0.77 0.44 0.54 Recommended Soldering Footprint Packing information Marking information " MU " = Part No. " YYWW " = Date Code Marking " Y " = Year (ex: 19 = 2019) " W " = Week (ex: 09 = the 9th week of the year) Font type: Arial Package Tape Width (mm) Pitch Reel Size Per Reel Packing Quantity mm inch mm inch DFN2020 8 4 ± 0.1 0.157 ± 0.004 178 7 4,000 0.98 1.3 0.35 (6x) 0.72 (2x) 1.75 1.05 (2x) 0.3 (6x) 2.25 2.1 3 4 A E b (6X) K (4X) P (2X) (2X) e D L YYWW MU Pin1 point 86-769-22857832 huixin@hxkj.hk Rev.01 Page 7 of 7