MMFTP84 SEMTECH_ELEC

Document overview

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Technical content

Dated: 03/06/2006 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) MMFTP84 P-Channel Enhancement Mode Vertical D-MOS Transistor

FEATURES

  • Low threshold voltage
  • Direct interface to C-MOS, TTL, etc.
  • High-speed switching
  • No secondary breakdown

APPLICATIONS

  • Line current interrupter in telephone sets
  • Relay, high speed and line transformer drivers CAUTION
  • The device is supplied in an antistatic package
  • The gate-source input must be protected against static discharge during transport or handling Absolute Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage -V DS 50 V Gate-Source Voltage V GSO ± 20 V Drain Current -I D 130 mA Peak Drain Current -I DM 520 mA Total Power Dissipation at Tamb ≤ 25 OC P tot 250 1) mW Operating Junction Temperature T j 150 OC Storage Temperature T stg -65 to +150 OC Thermal Characteristics Parameter Symbol Value Unit Thermal Resistance from Juntion to Ambient R thj-a 500 1) K/W 1) Device mounted on a printed-circuit board. 1. Gate 2. Source 3. Drain SOT-23 Plastic Package

Dated: 03/06/2006 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) MMFTP84 Characteristics at Tj = 25 OC unless otherwise specified Parameter Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage at -ID = 10 µA -V(BR)DSS 50 - - V Gate-Source Threshold Voltage a t VDS = VGS, -ID = 1 mA -VGSth 0.8 - 2 V Drain-Source Leakage Current a t - VDS = 40 V at -VDS = 50 V at -VDS = 50 V, Tj = 125 OC -IDSS 100 nA µA µA Gate Leakage Current a t V GS = ± 20 V IGSS - - ± 10 nA Drain-Source On-State Resistance a t - VGS = 10 V, -ID = 130 mA RDSon - - 10 Ω Forward Transfer admittance at -VDS = 25 V, -ID = 130 mA │yfs│ 50 - - mS Input Capacitance a t - VDS = 25 V, f = 1 MHz Ciss - - 45 pF Output Capacitance a t - VDS = 25 V, f = 1 MHz Coss - - 25 pF Reverse Transfer Capacitance a t - VDS = 25 V, f = 1 MHz Crss - - 12 pF Turn-On Time a t V GS = 0 to -10 V, -VDD = 40 V, -ID = 200 mA ton - 3 - ns Turn-Off Time a t V GS = -10 to 0 V, -VDD = 40 V, -ID = 200 mA toff - 7 - ns