MMFTN290KBP HUIXIN
Document overview
- Manufacturer or author: Provided By www.digicamel.com(free datasheet download site)
- PDF pages: 6
Technical content
Features
- Low Threshold Voltage
- Very Fast Switching
- Built-in G-S Protection Diode
- Typical ESD Protection HBM Class 2 Application
- Portable appliances
- Battery management Absolute Maximum Ratings(at Ta = 25℃ unless otherwise specified ) Parameter Symbol Value Unit Drain-Source Voltage V DS 20 V Gate-Source Voltage V GS ± 8 V Drain Current I D 1 A Peak Drain Current (at tp ≤ 1 0 µ s ) I DM 4 A Power Dissipation P D 360 1) 715 2) mW Operating Junction Temperature Range Tj - 55 to + 150 ℃ Storage Temperature Range Tstg - 65 to + 150 ℃ Thermal Characteristics Parameter Symbol Max. Unit Thermal Resistance from Junction to Ambient R θJA 360 1) 175 2) ℃/W 1) Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 2) Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air. Classification Voltage Range(V) 0A < 125 0B 125 to < 250 1A 250 to < 500 1B 500 to < 1000 1C 1000 to < 2000 2 2000 to < 4000 3A 4000 to < 8000 3B ≥ 8000 Source Gate Drain 86-769-22857832 huixin@hxkj.hk Rev.01 Page 1 of 6
Characteristics at Ta = 25℃ unless otherwise specified Parameter Symbol Min. Typ. Max. Unit STATIC PARAMETERS Drain-Source Breakdown Voltage a t ID = 250 µA BVDSS 20 - - V Drain-Source Leakage Current a t VDS = 20 V IDSS - - 1 µA Gate Leakage Current a t VGS = ± 8 V a t VGS = ± 4.5 V IGSS 0.5 µA Gate-Source Threshold Voltage a t VDS = VGS, ID = 250 µA VGS(th) 0.5 - 0.95 V Drain-Source On-State Resistance a t VGS = 4.5 V, ID = 500 mA at VGS = 2.5 V, ID = 400 mA at VGS = 1.8 V, ID = 100 mA RDS(on) 380 620 1100 mΩ DYNAMIC PARAMETERS Input Capacitance a t VGS = 0 V, VDS = 10 V, f = 1 MHz Ciss - 72 - pF Output Capacitance a t VGS = 0 V, VDS = 10 V, f = 1 MHz Coss - 14 - pF Reverse Transfer Capacitance a t VGS = 0 V, VDS = 10 V, f = 1 MHz Crss - 12 - pF Gate charge total a t VDS = 10 V, ID = 1 A, VGS = 4.5 V at VDS = 10 V, ID = 1 A, VGS = 2.5 V Qg 1.17 0.65 nC Gate to Source Charge a t VDS = 10 V, ID = 1 A, VGS = 4.5 V Qgs - 0.3 - nC Gate to Drain Charge a t VDS = 10 V, ID = 1 A, VGS = 4.5 V Qgd - 0.2 - nC Turn-On Delay Time a t VGS = 4.5 V, VDS = 10 V, ID = 0.5 A, Rg = 10 Ω td(on) - 12 - nS Turn-On Rise Time a t VGS = 4.5 V, VDS = 10 V, ID = 0.5 A, Rg = 10 Ω tr - 6 - nS Turn-Off Delay Time a t VGS = 4.5 V, VDS = 10 V, ID = 0.5 A, Rg = 10 Ω td(off) - 13 - nS Turn-Off Fall Time a t VGS = 4.5 V, VDS = 10 V, ID = 0.5 A, Rg = 10 Ω tf - 10 - nS Body-Diode PARAMETERS Drain-Source Diode Forward Voltage a t VGS = 0 V, IS = 0.5 A VSD - - 1.3 V Body-Diode Continuous Current IS - - 1 A Body Diode Reverse Recovery Time at I S = 1 A, di/dt = 100 A / µs trr - 5.2 - nS Body Diode Reverse Recovery Charge at I S = 1 A, di/dt = 100 A / µs Qrr - 1.2 - nC 86-769-22857832 huixin@hxkj.hk Rev.01 Page 2 of 6
Electrical Characteristics Curves Fig. 6 Typical Forward Characteristics Fig. 5 on-Resistance vs.Tj Fig. 3 on-Resistance vs. Drain Current Fig. 2 Typical Transfer Characteristics Fig. 1 Typical Output Characteristics Fig. 4 on-Resistance vs. Gate-Source Voltage 86-769-22857832 huixin@hxkj.hk Rev.01 Page 3 of 6
Electrical Characteristics Curves Fig. 7 Typical Junction Capacitance Fig. 11 Gate Charge Fig. 10 Gate Threshold Variation vs. Tj Fig. 8 Drain-Source Leakage Current vs. Tj Fig. 9 V(BR)DSS vs. Junction Temperature 86-769-22857832 huixin@hxkj.hk Rev.01 Page 4 of 6
Fig.1-1 Switching times test circuit Fig.1-2 Switching Waveform Fig.2-1 Gate charge test circuit Fig.2-2 Gate charge waveform 86-769-22857832 huixin@hxkj.hk Rev.01 Page 5 of 6
E Plastic surface mounted package DFN1006-3 UNIT A A1 b b1 D E E1 L L1 R mm 0.40 0.36 0.05 0.55 0.45 0.2 0.1 1.05 0.95 0.65 0.55 0.325 0.3 0.2 0.3 0.2 0.15 0.05 Recommended Soldering Footprint Packing information Package Tape Width (mm) Pitch Reel Size Per Reel PackingQuantity mm inch mm inch DFN1006-3 8 2 ± 0.1 0.079 ± 0.004 178 7 10,000 Marking information " MJ " = Part No. "YM" = Date Code Marking "Y" = Year "M" = Month Font type: Arial MJ 0.6 0.4 0.25 0.30.4 0.2 86-769-22857832 huixin@hxkj.hk Rev.01 Page 6 of 6