MMFTN20 SEMTECH_ELEC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Features
- High-speed switching
- No secondary breakdown
Applications
- Thin and thick film circuits
- General purpose fast switching applications Absolute Maximum Ratings (T a = 25 OC unless otherwise specified) Parameter Symbol Value Unit Drain-Source Voltage V DS 50 V Gate-Source Voltage (open drain) VGSO ± 20 V Drain Current ID 100 mA Peak Drain Current IDM 300 mA Ptot 1) 300 mW Total Power Dissipation Ptot 2) 250 mW Junction Temperature T j 150 OC Storage Temperature Range T s - 65 to + 150 OC Thermal Characteristics Parameter Symbol Value Unit RθJA 430 1) K/W Thermal Resistance from Juntion to Ambient RθJA 500 2) K/W 1) Device mounted on a ceramic substrate 10 X 8 X 0.7 mm. 2) Device mounted on a printed-circuit board. 1. Gate 2. Source 3. Drain SOT-23 Plastic Package Source Gate Drain
Dated: 01/06/2006 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) MMFTN20 Characteristics at Ta = 25 OC unless otherwise specified Parameter Symbol Min. Max. Unit Drain-Source Breakdown Voltage at ID = 10 µA V(BR)DSS 50 - V Drain-Source Leakage Current at VDS = 40 V IDSS - 1 µA Gate-Source Leakage Current a t VGS = ± 20 V IGSS - ± 100 nA Gate-Source Threshold Voltage a t VDS = VGS, ID = 1 mA VGS(th) 0.4 1.8 V Drain-Source On-State Resistance a t VGS = 10 V, ID = 100 mA at VGS = 5 V, ID = 100 mA at VGS = 2.5 V, ID = 10 mA RDS(on) Ω Forward Transfer Admittance a t V DS = 10 V, ID = 100 mA |yfs| 40 - mS Input Capacitance a t V DS = 10 V, f = 1 MHz Ciss - 15 pF Output Capacitance a t V DS = 10 V, f = 1 MHz Coss - 15 pF Reverse Transfer Capacitance a t V DS = 10 V, f = 1 MHz Crss - 5 pF Turn-On Time a t V GS = 0 to 10 V, VDD = 20 V, ID = 100 mA t(on) - 5 ns Turn-Off Time a t V GS = 10 to 0 V, VDD = 20 V, ID = 100 mA t(off) - 10 ns