MMFTN170 SEMTECH_ELEC
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Technical content
Dated: 10/02/2007 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) MMFTN170 N-Channel Enhancement Mode Field Effect Transistor Feature
- Voltage controlled small signal switch
- High saturation current capability Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Drain-Source Voltage V DSS 60 V Drain-Gate Voltage (RGS ≤ 1 MΩ) V DGR 60 V Gate-Source Voltage VGSS ± 20 V Drain Current - Continuous Drain Current - Pulsed ID 500 800 mA Total Power Dissipation P tot 300 mW Operating and Storage Temperature Range T j, Ts - 55 to + 150 OC Characteristics at Ta = 25 OC Parameter Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage at ID = 100 µA V(BR)DSS 60 - - V Zero Gate Voltage Drain Current at VDS = 25 V IDSS - - 0.5 µA Gate-Body Leakage, Forward at VGS = 15 V IGSSF - - 10 nA Gate-Source Threshold Voltage at VDS = VGS, ID = 1 mA VGS(th) 0.8 - 3 V Static Drain-Source On-Resistance at VGS = 10 V, ID = 200 mA RDS(on) - - 5 Ω Forward Transconductance at VDS ≥ 2 VDS(on), ID = 200 mA gFS - 320 - mS Input Capacitance at VDS = 10 V, f = 1 MHz Ciss - - 40 pF Output Capacitance at VDS = 10 V, f = 1 MHz Coss - - 30 pF Reverse Transfer Capacitance at VDS = 10 V, f = 1 MHz Crss - - 10 pF Turn-On Time at VDD = 25 V, ID = 500 mA, VGS = 10 V, RGEN = 50 Ω t(on) - - 10 ns Turn-Off Delay Time at VDD = 25 V, ID = 500 mA, VGS = 10 V, RGEN = 50 Ω t(off) - - 10 ns 1. Gate 2. Source 3. Drain SOT-23 Plastic PackageSource Gate Drain