MMDT3906 TRSYS
Document overview
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Technical content
Features
Epitaxial Planar Die Construction Ideal for Low Power Amplification and A\\ Ultra-Small Surface Mount Package Fl - - 8 fia [135 | Mechanical Data D__| 0.65 Nominal — 100 F | 0.30 | 0.40 Case: SOT-363, Molded Plastic H 100 | 220 Terminals: Solderable per MIL-STD-202, 7 - . Method 208 fe 7) y Lo | oe | Terminal Connections: See Diagram _ + kK 0.90 | 1.00 Marking: K3N 7 Lt! fel Fi Lt | 025 | 040 Weight: 0.006 grams (approx.) DoF L | M | o10 | 025 | Maximum Ratings @ Ta= 25 C unless otherwise specified rr 2 | Power Dissipation (Note 1) fe || Notes: 1. Valid provided that terminals are kept at ambient temperature. 2. Pulse test: Pulse width 300 s, duty cycle 2%.
Electrical Characteristics @ Ta= 25 C unless otherwise specified Characteristic |Symbol [min | Max | Unit —_| Test Condition OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage [Venceo| -40 | | V_ [lc=-10Ale=0 Collector-Emitter Breakdown Voltage [Verceo] -40 | | V_ | Ic=-1.0mA,Ie=0 Emitter-Base Breakdown Voltage V(BR)EBO -5.0 v le=-10 A, Ic=0 Collector Cutoff Current Icex nA Voce = -30V, Vesorr) = -3.0V Base Cutoff Current [ie [p80 | | Vee = 80, Vesiorn = 3.0V ON CHARACTERISTICS (Note 2) 60 Io = -100HA, Vce= -1.0V 80 Io = -1.0MA, Voce = -1.0V DC Current Gain re 100 300 Ic= -10MA, Vce= -1.0V 60 Ic= -50mA, Vce= -1.0V 30 Io =-100MA, Voce = -1.0V Collector-Emitter Saturation Voltage [ vecean | | 0.38 eg a= om Base- Emitter Saturation Voltage [ veccan | “065 | O82 ic = fom. e = yom SMALL SIGNAL CHARACTERISTICS Output Capacitance Cobo 45 pF Ves = -5.0V, f = 1.0MHz, le = 0 Input Capacitance [Cw || 10 | pF | Vea=-0.5V, 1=1.0MHz, = 0 Outpt Adan [mw [30] 0 | 8 | Current Gain-Bandwidth Product Lo | 250 | |e | tS Saomme oto 7 Vce= -5.0V, Ic=-100 A, SWITCHING CHARACTERISTICS Notes: 1. Valid provided that terminals are kept at ambient temperature. 2. Pulse test: Pulse width 300 s, duty cycle 2%.