MMDT3904_1 DIODES

Document overview

  • Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Features

  • Epitaxial Planar Die Construction
  • Ideal for Low Power Amplification and Switching
  • Ultra-Small Surface Mount Package
  • Lead Free/RoHS Compliant (Note 2) Mechanical Data
  • Case: SOT-363
  • Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020C
  • Terminals: Solderable per MIL-STD-202, Method 208
  • Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe).
  • Terminal Connections: See Diagram
  • Marking Information: See Page 4
  • Ordering Information: See Page 4
  • Weight: 0.006 grams (approximate) A M J LD B C H K G F SOT-363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J — 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 α 0° 8° All Dimensions in mm Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6.0 V Collector Current - Continuous IC 200 mA Power Dissipation (Note 1) Pd 200 mW Thermal Resistance, Junction to Ambient RθJA 625 °C/W Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C Notes: 1. Device mounted on FR-4 PC B; pad layout as shown on Diodes Inc. suggested pad layout documents APO2001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. DS30088 Rev. 11 - 2 1 of 4 www.diodes.com MMDT3904 © Diodes Incorporated

Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 3) Collector-Base Breakdown Voltage V(BR)CBO 60 ⎯ V IC = 10μA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 40 ⎯ V IC = 1.0mA, IB = 0 B Emitter-Base Breakdown Voltage V(BR)EBO 5.0 ⎯ V IE = 10μA, IC = 0 Collector Cutoff Current ICEX ⎯ 50 nA VCE = 30V, VEB(OFF) = 3.0V Base Cutoff Current IBL ⎯ 50 nA VCE = 30V, VEB(OFF) = 3.0V ON CHARACTERISTICS (Note 3) DC Current Gain hFE 100 300 IC = 100μA, VCE = 1.0V IC = 1.0mA, VCE = 1.0V IC = 10mA, VCE = 1.0V IC = 50mA, VCE = 1.0V IC = 100mA, VCE = 1.0V Collector-Emitter Saturation Voltage VCE(SAT) ⎯ 0.20 0.30 V IC = 10mA, IB = 1.0mA B IC = 50mA, IB B = 5.0mA Base-Emitter Saturation Voltage VBE(SAT) 0.65 0.85 0.95 V IC = 10mA, IB = 1.0mA B IC = 50mA, IB Notes: 3. Short duration pulse test used to minimize self-heating. B = 5.0mA SMALL SIGNAL CHARACTERISTICS Output Capacitance Cobo ⎯ 4.0 pF VCB = 5.0V, f = 1.0MHz, IE = 0 Input Capacitance Cibo ⎯ 8.0 pF VEB = 0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 1.0 10 kΩ Voltage Feedback Ratio hre 0.5 8.0 x 10 Small Signal Current Gain hfe 100 400 ⎯ Output Admittance hoe 1.0 40 μS VCE = 10V, IC = 1.0mA, f = 1.0kHz Current Gain-Bandwidth Product fT 300 ⎯ MHz VCE = 20V, IC = 10mA, f = 100MHz Noise Figure NF ⎯ 5.0 dB VCE = 5.0V, IC = 100μA, RS = 1.0kΩ, f = 1.0kHz SWITCHING CHARACTERISTICS Delay Time td ⎯ 35 ns Rise Time tr ⎯ 35 ns VCC = 3.0V, IC = 10mA, VBE(off) = - 0.5V, IB1 = 1.0mA Storage Time ts ⎯ 200 ns Fall Time tf ⎯ 50 ns VCC = 3.0V, IC = 10mA, IB1 = IB2 = 1.0mA DS30088 Rev. 11 - 2 2 of 4 www.diodes.com MMDT3904 © Diodes Incorporated

0.1 1 10 100 C , INPUT CAPACITANCE (pF) C , OUTPUT CAPACITANCE (pF) IBO OBO V , COLLECTOR-BASE VOLTAGE (V) Fig. 2, Input and Output Capacitance vs. Collector-Base Voltage CB Cibo Cobo f = 1MHz 25 50 75 100 125 150 175 200 P , POWER DISSIPATION (mW)D T , AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs Ambient Temperature (Total Device) A 100 150 200 Note 1 0.01 0.1 0.1 1 10 100 1000 V, COLLECTOR-EMITTER SATURATION VOLTAGE (V) CE(SAT) I , COLLECTOR CURRENT (mA) Fig. 4, Typical Collector-Emitter Saturation Voltage vs. Collector Current C I I C B = 10 1000 100 0.1 1 10 1000100 h, D C CURRENT GAINFE I , COLLECTOR CURRENT (mA) Fig. 3, Typical DC Current Gain vs Collector Current C T = - 2 5 ° CA T = +25°CA T = 125°CA V = 1.0VCE 0.1 0.1 1 10 100 1000 V, B ASE-EMITTER SATURATION VOLTAGE (V) BE(SAT) I , COLLECTOR CURRENT (mA) Fig. 5, Typical Base-Emitter Saturation Voltage vs. Collector Current C I I C B = 10 DS30088 Rev. 11 - 2 3 of 4 www.diodes.com MMDT3904 © Diodes Incorporated

Ordering Information (Note 4) Device Packaging Shipping DS30088 Rev. 11 - 2 4 of 4 www.diodes.com MMDT3904 © Diodes Incorporated MMDT3904-7-F SOT-363 3000/Tape & Reel Marking Information K6N = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September Data Code Key Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 Code J K L M N P R S T U V W X Y Z Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D IMPORTANT NOTICE Diodes Incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporat ed does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the ri ghts of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Inco rporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authoriz ed for use as critical components in life support devices or systems without the e xpressed written approval of the President of Diodes Incorporated.