MMDT2227 TRSYS

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Technical content

Features

Epitaxial Planar Die Construction Ultra-Small Surface Mount Package One 2222A-Type NPN, alae dim | Min | Max | One 2907A-Type PNP Fl A 0.10 | 0.30 Ideal for Low Power Amplification and B 1.15 | 1.35 Switching | c | 200 | 220 — D_ | 0.65 Nominal Mechanical Data F | 030 | 040 Case: SOT-363, Molded Plastic ——T ar H 1.80 | 2.20 Terminals: Solderable per MIL-STD-202, | 3 [J ono | Meo 208 i ST tae Terminal Connections: See Diagram + ct | 025 | 040 | Marking: K27 a fol r : Weight: 0.006 grams (approx.) DoF | _™_| 0.10 | 025 | Note: E1, B1, and C1 = PNP2907A Section, E2, B2, and C2 = NPN2222A Section Type marking indicates orientation. Maximum Ratings, NPN2222A Section @ Ta= 25 C unless otherwise specified [EmiterBeseVolage—SSSSCSC*dSSCSC SYS [Power Disspaton (Note) SSP S| Maximum Ratings, PNP2907A Section @ Ta= 25 C unless otherwise specified | Colector-Base Voltage fw | oF [Collector-émitterVotage | eco | oP [Collector Curent Continuous (Note1) | te | 800 ma [Power Dissipation Wow) ——=SSCSC*~C~“~sSSC<i SSS Note: 1. Valid provided that terminals are kept at ambient temperature. 2. Pulse test: Pulse width 300 s, duty cycle 2%.

Characteristic symbol | Min [Max [Unit —_| Test Condition OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage [Verceo] 75 | | V_ |lc=10Ale=0 Collector-Emitter Breakdown Voltage [Verceo| 40 | | Vv |Ic=10mA,ls=0 Emitter-Base Breakdown Voltage [Veneso| 60 | | v_ | le=10 A, Ic=0 nA | Vcp= 60V, le= 0 Collector Cutoff Current [ tcex | | 10 | nA _| Vce=60V, Vesiorr) = 3.0V Emitter Cutoff Curent lts0 || 10 | nd | Vew=80V, o=0 Base Cutoff Current btu || 20 | na | Voe= 60V, Vesiorr) = 3.0V ON CHARACTERISTICS (Note 2)

35 Ic= 100 A, Vce= 10V

50 Ic= 1.0mA, Vce= 10V

75 Ic=_10mA, Vce= 10V

DC Current Gain hre 100 300 Ic= 150MA, Vce= 10V

40 Ic = 500mA, Vce= 10V

50 I= 1OMA, Voe = 10V, Ta = -55 C

35 Ig= 150mA, Vce = 1.0V Collector-Emitter Saturation Voltage [vers] | $3 Iz Soom, Be Soma Base- Emitter Saturation Voltage [vecsm | °° | 32 fv | ic = ome i = ama SMALL SIGNAL CHARACTERISTICS Output Capacitance [ Coo | | 8 | pF __| Vca=10V,f=1.0MHz, le=0 Input Capacitance [Co | — | 25 | pF | Ves=0.5V, f= 1.0MHz, Ic=0 Vce= 10V, Ic = 100 A, SWITCHING CHARACTERISTICS Delay Time Jt [| 10 | ns | voo=90v, = 150ma, [Rise Time ins | een = “DEV Ton = HA Note: 1. Valid provided that terminals are kept at ambient temperature. 2. Pulse test: Pulse width 300 s, dutycycle 2%.

Characteristic symbol_| min |Max [Unit —_| Test Condition OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage [Verceo] -60 | | V_ |lc=-10Ale=0 Collector-Emitter Breakdown Voltage Vipr)ceo Vv Ic =-10mMA, Ip = 0 Emitter-Base Breakdown Voltage ViBR)EBO Vv le=-10 A, Ic=0 nA Voce = -50V, le=0 Collector Cutoff Current lopo || -o | A Vo = -50V, le= 0, Ta = 125 C Collector Cutoff Current [tcex | | 80 | nA _| Vce=-S0V, Vesiorr)=-0.5V Base Cutoff Current Tt. [50 | nA | Voe=-80V, Vesiorn =-0.5V ON CHARACTERISTICS (Note 2)

75 Io= -100UA, Voe= -10V

100 Ic = -1.0MA, Vce = -10V DC Current Gain hre 100 Ic= -10mMA, Vce = -10V 100 300 Ic = -150mA, Vce= -10V

50 Ic = -500mA, Vce = -10V

. z = = Collector-Emitter Saturation Voltage [vers] | 04 ic = Roma’ B = wm Base- Emitter Saturation Voltage [vem] | 38 ic = ome e zyme SMALL SIGNAL CHARACTERISTICS Output Capacitance Cobo 8.0 pF Vo = -10V, f= 1.0MHz, le = 0 Current Gain-Bandwidth Product Lt | 200 | | mie | te SSooMme ler “Soma SWITCHING CHARACTERISTICS Ic=-150mA, Vcc = -30V, Delay Time pot | 0 | ns | vec=-20y, te = -150mA, Notes: 1. Valid provided that terminals are kept at ambient temperature. 2. Pulse test: Pulse width 300 s, duty cycle 2%.