MMD60R360P ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc&iscsemiisregisteredtrademark1 iscN-ChannelMOSFETTransistor MMD60R360P
- FEATURES
- Staticdrain-source on-resistance: RDS(on)≤0.38Ω
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- DESCRITION
- Switching applications
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 600 V VGS Gate-SourceVoltage ±30 V ID DrainCurrent-Continuous 11 A IDM DrainCurrent-SinglePulsed 33 A PD TotalDissipation@TC=25℃ 83 W Tj Max.OperatingJunctionTemperature 150 ℃ Tstg StorageTemperature -55~150 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(j-c) Channel-to-casethermalresistance 1.5 ℃/W
iscwebsite：www.iscsemi.cn isc&iscsemiisregisteredtrademark2 iscN-ChannelMOSFETTransistor MMD60R360P ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=250μA 600 V VGS(th) GateThresholdVoltage VDS=VGS;ID=250μA 2 4 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=3.8A 0.38 Ω IGSS Gate-SourceLeakageCurrent VGS=±30V ±100 nA IDSS Drain-SourceLeakageCurrent VDS=600V;VGS=0V 1 μA VSD Diodeforwardvoltage ISD=11A,VGS =0V 1.4 V