MMBT2222 HOTTECH
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Technical content
Page:P2-P1 Plastic-Encapsulate Transistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. FE A TURES Epitaxialplanar die construction. Ultra-small surface mount package. MARKING :M B1 MAXIMUM RA TINGS (TA=25 unless otherwise noted) Parameter Symbol V alue Unit Collector-Base V oltage V CBO 60 V Collector-EmitterV oltage V CE O 30 V Emitter-Base V oltage V EBO 5 V Collector Current-Continuous IC 0.6 A Collector Pow er Dissipation PC 0.3 W Junction Temperature TJ 150 StorageTemp erature Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Testconditions M in Typ M ax U nit Collector-base breakdow n voltage V CBO IC =10μA IE=0 60 V Collector-em itter breakdown voltage V CEO IC =10mA IB =0 30 V Emitter-base breakdow n voltage V EBO IE=10μA IC =0 5 V Collector cut-offcurrent ICBO V C B =50V IE=0 0.01 μA Emitter cut-off current IEBO V EB =3V IC =0 0.01 μA DC currentgain hFE V C E=10V IC =150mA 100 300 V C E=10V IC =0.1mA 35 V C E=10V IC =1.0mA 50 V C E=10V IC =10mA 75 V C E=10V IC =500mA 30 V C E=1V IC =150mA 50 Collector-em ittersaturation voltage V CE(sat) IC =500mA IB =50mA IC =150mA IB =15mA 1.6 0.4 V Base-emitter saturation voltage V BE(sat) IC =500mA IB =50mA IC =150mA IB =15mA 2.6 1.3 V Transition frequency fT V C E=20V IC =20mA f=100MHz
250 MHz
Outputcapacitance C obo V C B =10V,IE=0,f=1MHz 8.0 pF Inputcapacitance C ibo V EB =0.5V,IC =0, f=1MHz 30 pF Delay time td V cc=30V, V B E (off) =0.5V I C =150mA I 15mA 10 ns (NPN ) 1. BASE 2. EMITTER SOT -23 3. COLLECTO MMBT2222
Page:P2-P2 Plastic-Encapsulate Transistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. Risetime tr 25 ns Storage time Ts V CC =30V, IC =150mA IB1 =IB2 =15mA 225 ns Falltime tf 60 ns Typical Characteristics MMBT2222