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MAXIMUM RATINGS(EACH DIODE) Rating Symbol Value Unit Reverse Voltage V R 100 Vdc Forward Current I F 200 mAdc Peak Forward Surge Current I FM(surge) 500 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR– 5 Board (1) P D mW T A = 25°C Derate above 25°C mW/°C Thermal Resistance, Junction to Ambient R θ JA 556 °C/W Total Device Dissipation P D 300 mW Alumina Substrate, (2) T A = 25°C Derate above 25°C 2.4 mW/°C Thermal Resistance, Junction to Ambient R θ JA 417 °C/W Junction and Storage Temperature T J , T stg –55 to +150 °C DEVICE MARKING ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)(EACH DIODE) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage V (BR) 100 — Vdc (I (BR) = 100 µAdc) Reverse Voltage Leakage Current µ Adc (V R = 50 Vdc) I R — 1.0 (V R = 100 Vdc) I R2 — 3.0 (V R = 50 Vdc,125°C) I R3 — 100 Forward Voltage V F Vdc (I F = 1.0 mAdc) 0.55 0.7 (I F = 10 mAdc) 0.67 0.82 (I F = 100 mAdc) 0.75 1.1 Reverse Recovery Time t rr — 4.0 ns (I F = I R = 10 mAdc) (Figure 1) Capacitance(V R=0V) C — 1.5 pF Dual Switching Diode CATHODE/ANODE ANODE CATHODE Device Marking Shipping MMBD7000W 3000/Tape & Reel
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z We declare that the material of product compliance with RoHS requirements. M5C 1 SOT-323 200 MMBD7000W=M5C 1.6 MMBD7000W 2012-1 WILLAS ELECTRONIC CORP. z
0.7 1.9 0.028 0.65 0.025 0.65 0.025 inches mm 0.075 0.035 0.9 2012-1 WILLAS ELECTRONIC CORP. Dual Switching Diode MMBD7000W SOT-323 Dimensions in inches and (millimeters) .056(1.40) .047(1.20) .096(2.45) .078(2.00) .004(0.10)MIN. .010(0.25) .003(0.08) .043(1.10) .032(0.80) .016(0.40) .008(0.20) .004(0.10)MAX. .087(2.20) .070(1.80) .054(1.35) .045(1.15)