MMBD7000-3 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
www.kexin.com.cn 1 Diodes Switching Diodes MMBD7000 (KMBD7000) ■ Features
- Dual Swithching Diode
- Fast Switching Speed
- Surface Mount Package Ideally Suited for Automatic Insertion
- For General Purpose Switching Applications ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Reverse Voltage VRM 100 Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage VRWM RMS Reverse Voltage VRMS 53 Average Rectified Output Current IO 200 mA Non-Repetitive Peak Forward Surge Current @ t = 1us 2 @ t = 1s 1 Power Dissipation Pd 225 mW Thermal Resistance Junction to Ambient RθJA 556 ℃/W Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 IFSM A 75 V ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Reverse breakdown voltage VR IR= 100 uA 100 IF= 1 mA 0.7 IF= 10 mA 0.82 IF= 100 mA 1.1 VR= 50 V 1 VR= 100 V 3 Diode capacitance CT VR= 0 V, f= 1 MHz 2 pF Reverse recovery time trr IF=IR=10mA,Irr=0.1xIR, RL=100Ω 4 ns Forward voltage VF V Reverse voltage leakage current IR uA ■ Marking Marking 5C 0.4+0.1 -0.1 2.9+0.2 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.2 2.8 +0.2 -0.1 +0.2 -0.1 1 2 Unit: mmSOT-23-3 1.6 0.4 0.15 +0.02 -0.02 0.55 0-0.1 0.68 +0.1 -0.1 1.1 +0.2 -0.1
www.kexin.com.cn2 Diod es Switching Diodes MMBD7000 (KMBD7000) ■ Typical Characterisitics 100 1000 10,000 0020010 I EGAKAEL TNERRUC )An( R T , JUNCTION TEMPERATURE (°C) Fig. 2 Leakage Current vs Junction Temperature j V = 20VR 1.0 100 1000 0.1 0.01 210 TSNI TNA ENA O SU FOR W DRA TNERRUC F V , INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 1 Forward Characteristics F