MMBD6050-V_12 VISHAY

Document overview

  • Manufacturer or author: Provided By digicamel.com
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Technical content

Features

  • Silicon Epitaxial Planar Diode  Fast switching diode in case SOT-23, especially suited for automatic insertion.  AEC-Q101 qualified  Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC Mechanical Data Case: SOT-23 Weight: approx. 8.8 mg Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/box Parts Table Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified 1) FR-5 = 1.0 x 0.75 x 0.062 in. Thermal Characteristics Tamb = 25 °C, unless otherwise specified Part Ordering code Marking Remarks MMBD6050-V MMBD6050-V-GS18 or MMBD6050-V-GS08 5AM Tape and Reel Parameter Test condition Symbol Value Unit Continuous reverse voltage VR 70 V Forward current IF 200 mA Peak forward surge current IFSM 500 mA Maximum power dissipation on FR-5 board Ptot 225 mW Derate above 25 °C Ptot 1.8 mW/°C Maximum power dissipation on Alumina substrate Ptot 300 mW Derate above 25 °C Ptot 2.4 mW/°C Parameter Test condition Symbol Value Unit Thermal resistance FR-5 RthJA 556 °C;/W Junction to ambient Alumina RthJA 417 °C/W Maximum junction temperature Tj 150 °C Storage temperature range Tstg - 55 to + 150 °C

www.vishay.com Document Number 85735 Rev. 1.4, 12-Aug-10 MMBD6050-V Vishay Semiconductors For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified Typical Characteristics Tamb = 25 °C unless otherwise specified Parameter Test condition Symbol Min Typ. Max Unit Reverse breakdown voltage IR = 100 μAV (BR) 70 V Forward voltage IF = 1 mA V F 0.55 0.7 V IF = 100 mA V F 0.85 1.1 V Reverse leakage current VR = 50 V I R 0.1 μA Reverse recovery time IF = IR = 10 mA, Irr = 1 mA t rr 4n s Diode capacitance VR = 0 C D 2.5 pF Figure 1. Dynamic Forward Resistance vs. Forward Current Figure 2. Admissible Power Dissipation vs. Ambient Temperature

18861 IF - Forward Current (mA)

18889 Tamb -A mbient Temperature ( °C)

Figure 3. Dynamic Forward Resistance vs. Forward Current Figure 4. Relative Capacitance vs. Reverse Voltage

www.vishay.com Document Number 85735 Rev. 1.4, 12-Aug-10 MMBD6050-V Vishay Semiconductors For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Package Dimensions in millimeters (inches): SOT-23 Foot print recommendation: Rev. 8 - Date: 23.Sept.2009 17418 Document no.: 6.541-5014.01-4 0.9 (0.035) 1 (0.039) 0.9 (0.035) 1 (0.039) 1.43 (0.056) 0.45 (0.018) 0.35 (0.014) 2.8 (0.110) 3.1 (0.122) 0.45 (0.018) 0.35 (0.014) 0.45 (0.018) 0.35 (0.014) 0.1 (0.004) max. 2.35 (0.093) 2.6 (0.102) 0.175 (0.007) 0.098 (0.004) 1.15 (0.045) 0.9 (0.035) 1.20 (0.047) 0.7 (0.028) 0.9 (0.035) 0° to 8° 0.2 (0.008) 0.3 (0.012) 0.5 (0.020) 0.550 ref. (0.022 ref.)

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