MMBD4148XX GWSEMI

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Technical content

Min. Max. Unit Forward Voltage at I F = 10 mA V F V Reverse Breakdown Voltage at I R = 100 µA at I R = 5 µA V (BR)R 100 V Reverse Current at V R = 20 V at V R = 75 V at V R = 20 V, T a = 150 O C I nA µA µA Reverse Recovery Time at I F = 10 mA, V R = 6 V, I RR = 1 mA, R L = 100 Ω t rr ns Total Capacitance at V R = 0 V, f = 1 MHz 4148 4148SE 4148CC 4148CA 3 3 3 1 2 1 2 1 2 1 SOT-23 Plastic Package Absolute Maximum Ratings a = 25 O Parameter Symbol Value Unit Maximum Repetitive Reverse Voltage V RRM 100 V Reverse Voltage V R V Average Rectified Forward Current I F(AV) 200 mA DC Forward Current I FM 600 mA Recurrent Peak Forward Current I FRM 700 mA Non-repetitive Peak Forward Surge Current at t = 1 s at t = 1 μs I FSM A Total Device Dissipation P tot 350 mW Operating Junction Temperature T j 150 O C Storage Temperature Range T stg - 55 to + 150 O C Characteristics at T a = 25 O C R C T pF Marking Code: Marking Code: Marking Code: Marking Code: Silicon Epitaxial Planar Switching Diode D4148xx-SERIES MMB 5H / 5D D4 / A7 D5 / A4 D6 / A1

0.1 1000 100 400 600 800 1000 1200 I, INSTANTANE OUS F ORWARD CURRENT (mA) F V , INSTANTANEOUS FORWARD VOLTAGE (mV) Fig. 2, Typical Forward Characteristics F T = +25°C A T = -25°C A T = +75°C A T = +125°C A T = +150°C A 400 100 T , AMBIENT TEMPERATURE, (°C) A Fig. 1 Power Derating Curve POWER DISSIP ATI ON (mW) d 200 100 300 500 0 200 0.0001 0.001 0.01 0.1 0 50 100 150 200 I, INSTANTANEOUS REVERSE CURRENT ( A) F µ T , JUNCTION TEMPERATURE ( C) Fig. 3, Typical Reverse Characteristics j V = 20V R V = 75V R D4148xx-SERIES MMB

Plastic surface mounted package; 3 leads SOT-23 D4148xx-SERIES MMB