ME70N03 ETC1
Document overview
- Manufacturer or author: pROVIDED bY www.digicamel.com(free datasheet download site)
- PDF pages: 3
Technical content
Absolute Maximum Ratings (T A=25 Unless Otherwise Noted) Symbol Limit Unit Continuous Drain Current Pulsed Drain Current VDS VGS ID IDM 350 V A1) Maximum Power Dissipation TA=25 TA=100 PD TJ Tstg 42 W Operating Junction Temperature Storage Temperature Range -55 to 150 Avalanche Energy with Single Pulse ID = 50A,V DD= 25V, L= 0.5mH EAS 300 mJ Junction-to-Case Thermal Resistance R JC R JA 1.8 40 /WJunction-to-Ambient Thermal Resistance (PCB mounted) 2) Note:1.Maximum DC current limited by the package 2.1-in 2oz Cu PCB board2 30V N-Channel Enhancement Mode MOSFET ME70N03 01Jul,2005-Ver1.0 TO-252(D-P AK) G S D Drain Source Gate INTERNAL SCHEMA TIC DIAGRAM Top View VDS=30V RDS(ON) ,Vgs@10V,Ids @45A=6 mÙ RDS(ON) ,Vgs@4.5V,Ids @30A=10 mÙ
FEATURES
Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Specially Designed for DC/DC Converters and Motor Drivers Fully Characterized Avalanche Voltage and Current Pb Free Product
PreliminaryElectrical Characteristics (T =25 Unless Specified)J Max UnitTest Conditions Min Typ Zero Gate Voltage Drain Current Gate Threshold Voltage STATIC Symbol Parameter IDSS VGS = 0V, ID=250 A 9.0 V m VDS = VGS, ID=250 AVGS(th) A Forward Transconductancegfs VDS = 15V, ID =15A VGS = +20V, VDS = 0V S Drain-Source On-State ResistanceRDS(ON) Gate-Body Leakage DYNAMIC Total Gate ChargeQg 26 nC6 Gate-Drain Charge Gate-Source Charge Qgd Qgs VDS= 15V, ID= 25A, VGS=10V Turn-On Delay Time Turn-Off Delay T ime tr Td(on) Td(off) tf VDD= 15V, RL = 15 ID = 1A, VGEN=10V RG = 6 3.5 nsTurn-On Rise Time Turn-Off Fall T ime 2134Input CapacitanceCiss BVDSS Drain-Source Breakdown Voltage VGS = 4.5V, ID=30A 7.5 VGS = 10V, ID=30A 6.04.5 1 1.6 3 V VDS = 25V, VGS = 0V 1 IGSS +100 nA Gate ResistanceRg 1 VDS= 15V, VGS=0V f = 1.0 Mhz 343 134 pFCoss Crss Output Capacitance Reverse Transfer Capacitance Diode Forward VoltageVSD IS =20A, V GS = 0V 1.2 V0.85 SOURCE-DRAIN DIODE IS Max.Diode Forward Current A20 Note:pulse test:pulse width 300us,duty cycle 2% - - 30V N-Channel Enhancement Mode MOSFET ME70N03
Preliminary30V N-Channel Enhancement Mode MOSFET ME70N03 Physical Dimensions inches (millimeters) unless otherwise noted TO-252 MILLIMETE RS INCHES SYMBOL MIN MAX MIN MAX A 2.250 2.350 0.089 0.093 A1 0.950 1.050 0.037 0.041 C 0.490 0.530 0.019 0.021 E 6.400 6.600 0.252 0.260 E2 5.300 5.450 0.209 0.215 D 6.000 6.200 0.236 0.244 D2 7.100 7.300 0.280 0.287 H 9.700 10.100 0.382 0.398 L 0.600 Re f 0.024 Re f L1 1.425 1.625 0.056 0.064 L2 0.650 0.850 0.026 0.033 L3 0.020 0.120 0.001 0.005 b 0.770 0.850 0.030 0.033 b1 0.840 0.940 0.033 0.037 P 2.290 BSC 0.090 BSC E P H C A LE2 D D2 b