ME4410A ETC2
Document overview
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Technical content
July, 2008-Ver4.1 N-Channel 30-V (D-S) MOSFET ME4410A Parameter Symbol 10 sec Steady State Unit Drain-Source Voltage V DSS 30 V Gate-Source Voltage V GSS ±20 V TA=25℃ 10 7.5 Continuous Drain Current TA=70℃ ID 8 6 A Pulsed Drain Current I DM 40 A Continuous Source Current (Diode Conduction) I S 2.3 1.26 A TA=25℃ 2.5 1.4 Maximum Power Dissipation TA=70℃ PD 1.6 0.9 W Operating Junction Temperature T J -55 to 150 ℃ T≦10 sec 35 Thermal Resistance-Junction to Ambient* R θJA Steady State 60 ℃/W Thermal Resistance-Junction to Case R θJC 32 ℃/W GENERAL DESCRIPTION The ME4410A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.
FEATURES
- R DS(ON)≦18mΩ@VGS=10V
- R DS(ON)≦20mΩ@VGS=4.5V
- Super high density cell design for extremely low R DS(ON)
- Exceptional on-resistance and maximum DC current capability
APPLICATIONS
- Power Management in Note book
- Portable Equipment
- Battery Powered System
- DC/DC Converter
- Load Switch
- DSC PIN CONFIGURATION (SOP-8) Top View Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) *The device mounted on 1in2 FR4 board with 2 oz copper
July, 2008-Ver4.1 N-Channel 30-V (D-S) MOSFET ME4410A Notes: a. Pulse test; pulse width ≦ 300us, duty cycle≦ 2% Symbol Parameter Limit Min Typ Max Unit STATIC VGS(th) Gate Threshold Voltage VDS=VGS, ID=250μA 1.0 1.4 3.0 V IGSS Gate Leakage Current V DS=0V, VGS=±20V ±100 nA VDS=30V, VGS=0V 1 IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V (TJ=55℃) 5 μA ID(ON) On-State Drain Current a VDS=5V, VGS= 10V 20 A VGS=10V, ID= 10A 12 18 RDS(ON) Drain-Source On-State Resistance a VGS=4.5V, ID= 8A 17 20 mΩ GFS Forward Transconductance a V DS=15V, ID=10A 17 S VSD Diode Forward Voltage I S=2.3A, VGS=0V 0.7 1.1 V DYNAMIC Qg Total Gate Charge V DS=15V, VGS=4.5V, ID=10A 11 15 Qgt Total Gate Charge 20 26 Qgs Gate-Source Charge 5 Qgd Gate-Drain Charge VDS=15V, VGS=10V, ID=10A 4.9 nC Ciss Input capacitance 700 800 Coss Output Capacitance 120 Crss Reverse Transfer Capacitance VDS=15V, VGS=0V, f=1MHz pF Rg Gate Resistance V GS=0V, VDS=0V, f =1MHz 0.9 Ω td(on) Turn-On Delay Time 14 17 tr Turn-On Rise Time 12 15 td(off) Turn-Off Delay Time 43 55 tf Turn-On Fall Time VDD=25V, RL =25Ω ID=1A, VGEN=10V RG=6Ω 4 6 ns Electrical Characteristics (TA =25℃ Unless Otherwise Specified)
July, 2008-Ver4.1 N-Channel 30-V (D-S) MOSFET ME4410A Typical Characteristics (T J =25℃ Noted)
July, 2008-Ver4.1 N-Channel 30-V (D-S) MOSFET ME4410A Typical Characteristics (T J =25℃ Noted)
July, 2008-Ver4.1 N-Channel 30-V (D-S) MOSFET ME4410A MILLIMETERS (mm) DIM MIN MAX A 1.35 1.75 A1 0.10 0.25 B 0.35 0.49 C 0.18 0.25 D 4.80 5.00 E 3.80 4.00 e 1.27 BSC H 5.80 6.20 L 0.40 1.25 θ 0° 7 ° No t e : 1 . R e f e r t o J E D E C M S - 0 1 2 A A . 2. Dimension “D” does not include mold flash, protrusions or gate burrs . Mold flash, protrusions or gate burrs shall not exceed 0.15 mm per side.