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N-Channel 100-V (D-S) MOSFET ME15N10/ME15N10-G 01Dec,2009-Ver1.0 Parameter Symbol Rating Unit Drain-Source Voltage V DSS 100 V Gate-Source Voltage V GSS ±20 V TC=25℃ 14.7 Continuous Drain Current(Tj=150℃) TC=70℃ ID 13.6 A Pulsed Drain Current I DM 59 A TC=25℃ 34.7 Maximum Power Dissipation TC=70℃ PD 22.2 W Operating Junction Temperature T J -55 to 150 ℃ Thermal Resistance-Junction to Case * RθJC 3.6 ℃/W GENERAL DESCRIPTION The ME15N10 is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. Thes e devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package.

FEATURES

  • R DS(ON)≦100mΩ@VGS=10V
  • Super high density cell design for extremely low R DS(ON)
  • Exceptional on-resistance and maximum DC current capability

APPLICATIONS

  • Power Management in Note book
  • DC/DC Converter
  • Load Switch
  • LCD Display inverter PIN CONFIGURATION Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) * The device mounted on 1in2 FR4 board with 2 oz copper e Ordering Information: M E 1 5 N 1 0 ( P b - f r e e ) ME15N10-G (Green product-Halogen free) (TO-252-3L) Top View

N-Channel 100-V (D-S) MOSFET ME15N10/ME15N10-G 02Dec,2009-Ver1.0 Symbol Parameter Limit Min Typ Max Unit STATIC BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 100 V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250μA 1 3 V IGSS Gate Leakage Current V DS=0V, VGS=±20V ±100 nA IDSS Zero Gate Voltage Drain Current V DS=80V, VGS=0V 1 μA RDS(ON) Drain-Source On-Resistance a VGS=10V, ID= 8A 80 100 mΩ VSD Diode Forward Voltage I S=8A, VGS=0V 0.9 1.2 V DYNAMIC Qg Total Gate Charge V DS=80V, VGS=10V, ID=10A 24 Qg Total Gate Charge 13 Qgs Gate-Source Charge 4.6 Qgd Gate-Drain Charge VDS=80V, VGS=4.5V, ID=10A 7.6 nC Ciss Input Capacitance 890 Coss Output Capacitance 58 Crss Reverse Transfer Capacitance VDS=15V, VGS=0V, f=1MHz pF Rg Gate-Resistance V DS=0V, VGS=0V, f=1MHz 0.9 Ω td(on) Turn-On Delay Time 14 tr Turn-On Rise Time 33 td(off) Turn-Off Delay Time 39 tf Turn-Off Fall Time VDS=50V, RL =5Ω, VGEN=10V, RG=1Ω ns Notes: a. Pulse test: pulse width≦ 300us, duty cycle≦ 2%,Guaranteed by design, not subject to production testing. b . Matsuki reserves the right to improve product design, functions and reliability without notice. Electrical Characteristics (T A =25℃ Unless Otherwise Specified)

N-Channel 100-V (D-S) MOSFET ME15N10/ME15N10-G 03Dec,2009-Ver1.0 Typical Characteristics (T J =25℃ Noted)

N-Channel 100-V (D-S) MOSFET ME15N10/ME15N10-G 04Dec,2009-Ver1.0 Typical Characteristics (T J =25℃ Noted)