MCT5211

MCT5210 VISHAY

Document overview

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Technical content

Document Number: 83657 For technical questions, please contact: optocoupler.answers@vishay.com www.vishay.com Rev. 1.5, 14-Jan-08 1 Optocoupler, Phototransistor Output, Low Input Current, With Base Connection MCT5210/MCT5211 Vishay Semiconductors

DESCRIPTION

The MCT521/5211 are optocouplers with a high efficiency AIGaAs LED optically coupled to a NPN phototransistor. The high performance LED makes operation at low input currents practical. The coupler is housed in a six pin DIP package. Isolation test voltage is 5300 VRMS. Because these parts have guaranteed CTRs at 1 mA and 3 mA, they are ideally suitable for interfacing from CMOS to TTL or LSTTL to TTL. They are also ideal for telecommunications applications such as ring or off-hook detection.

FEATURES

• Saturation CTR - MCT5211, > 100 % at IF = 1.6 mA  High isolation voltage, 5300 V RMS  Lead (Pb)-free component  Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC AGENCY APPROVALS  UL1577, file no. E52744 system code H or J, double protection  BSI IEC 60950; IEC 60065  DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 pending available with option 1  CSA 93751 Note For additional information on the available options refer to option information. i179004 B C E A C NC ORDER INFORMATION PART REMARKS MCT5210 CTR > 70 %, DIP-6 MCT5211 CTR > 110 %, DIP-6 MCT5211-X007 CTR > 110 %, SMD-6 (option 7) MCT5211-X009 CTR > 110 %, SMD-6 (option 9) ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Peak reverse voltage VR 6.0 V Forward continuos current I F 40 mA Power dissipation Pdiss 75 mW Derate linearly from 25 °C 1.0 mW/°C OUTPUT Collector emitter breakdown voltage BVCEO 30 V Emitter collector breakdown voltage BVECO 7.0 V Collector base breakdown voltage BVCBO 70 V Power dissipation Pdiss 200 mW Derate linearly from 25 °C 2.6 mW/°C

www.vishay.com For technical questions, pleas e contact: optocoupler.answers@vishay.com Document Number: 83657 2 Rev. 1.5, 14-Jan-08 MCT5210/MCT5211 Vishay Semiconductors Optocoupler, Phototransistor Output, Low Input Current, With Base Connection Note Tamb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. Note Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requi rements. Typical values ar e characteristics of the device and are the result of eng ineering evaluation. Typical values are for information only and are not part of the testing requirements. COUPLER Isolation test voltage V ISO 5300 V RMS Total package dissipation (LED and detector) P tot 260 mW Derate linearly from 25 °C 3.5 mW/°C Creepage distance ≥ 7m m Clearance distance ≥ 7m m Comparative tracking index per DIN IEC 112/VDE 0303, part 1 CTI 175 Isolation resistance VIO = 500 V, Tamb = 25 °C R IO ≥ 1012 Ω VIO = 500 V, Tamb = 100 °C R IO ≥ 1011 Ω Operating temperature T amp - 55 to + 100 °C Storage temperature Tstg - 55 to + 150 °C ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT

ELECTRICAL CHARACTERISTICS

MIN. TYP. MAX. UNIT INPUT Forward voltage I F = 5.0 mA V F 1.2 1.5 V Reverse voltage I R = 10 µA V R 6.0 V OUTPUT DC forward current gain V CE = 5.0 V, IC = 100 µA h FE 100 200 Collector emitter breakdown voltage IC = 100 µA BV CEO 30 V Emitter collector breakdown voltage IE = 100 µA BV ECO 7.0 V Collector base breakdown voltage IE = 10 µA BV CBO 70 V Collector emitter leakage voltage VCE = 10 V I CEO 5.0 100 nA COUPLER Saturation voltage IF = 3.0 mA, IC = 1.8 mA MCT5210 V CEsat 0.25 0.4 V IF = 1.6 mA, IC = 1.6 mA MCT5211 V CEsat 0.25 0.4 V CURRENT TRANSFER RATIO PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Current transfer ratio (collector emitter saturated) VCE = 0.4 V, IF = 3.0 mA MCT5210 CTR CEsat 60 120 % VCE = 0.4 V, IF = 1.6 mA MCT5211 CTR CEsat 100 200 % VCE = 0.4 V, IF = 1.0 mA MCT5211 CTR CEsat 75 150 % Current transfer ratio VCE = 5.0 mA, IF = 3.0 mA MCT5210 CTR 70 150 % VCE = 5.0 mA, IF = 1.6 mA MCT5211 CTR 150 300 % VCE = 5.0 mA, IF = 1.0 mA MCT5211 CTR 110 225 % Current transfer ratio (collector base) VCE = 4.3 V, IF = 3.0 mA MCT5210 CTR CB 0.2 0.4 % VCE = 4.3 V, IF = 1.6 mA MCT5211 CTR CB 0.3 0.6 % VCE = 4.3 V, IF = 1.0 mA MCT5211 CTR CB 0.25 0.5 %

Document Number: 83657 For technical questions, please contact: optocoupler.answers@vishay.com www.vishay.com Rev. 1.5, 14-Jan-08 3 MCT5210/MCT5211 Optocoupler, Phototransistor Output, Low Input Current, With Base Connection Vishay Semiconductors Fig. 1 - Switching Schematic Fig. 2 - Switching Waveform TYPICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified Fig. 3 - Forward Current vs. Forward Voltage Fig. 4 - LED Forward Current vs. Forward Voltage SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Propagation delay high to low RL = 330 Ω , IF = 3.0 mA, VCC = 5.0 V MCT5210 t PHL 10 µs RL = 750 Ω , IF = 1.6 mA, VCC = 5.0 V MCT5211 t PHL 20 µs RL = 1.5 kΩ , IF = 1.0 mA, VCC = 5.0 V MCT5211 t PHL 40 µs Propagation delay low to high RL = 330 Ω , IF = 3.0 mA, VCC = 5.0 V MCT5210 t PLH 10 µs RL = 750 Ω , IF = 1.6 mA, VCC = 5.0 V MCT5211 t PLH 20 µs RL = 1.5 kΩ , IF = 1.0 mA, VCC = 5.0 V MCT5211 t PLH 40 µs imct5210_06 Input VOUT V = 5 VCC RL imct5210_03 IF tR VO tD tS tF tPHL tPLH V = 1.5 VTH imct5210_01 VF - LED Forward Volta ge-V IF - LED Current - mA imct5210_02 100 VF - LED Forward Voltage - V IF - LED Current - mA

www.vishay.com For technical questions, pleas e contact: optocoupler.answers@vishay.com Document Number: 83657 4 Rev. 1.5, 14-Jan-08 MCT5210/MCT5211 Vishay Semiconductors Optocoupler, Phototransistor Output, Low Input Current, With Base Connection Fig. 5 - Collector Base Photocurrent vs. LED Current Fig. 6 - Photocurrent vs. LED Current Fig. 7 - Collector Base CTR vs. LED Current Fig. 8 - Collector Base CTR vs. LED Current Fig. 9 - CTR vs. LED Current Fig. 10 - Collector Current vs. LED Current imct5210_04 4035302520151050 100 150 200 250 300 IF - LED Current - mA Icb - Photocurrent -μA imct5210_05 100101.1 100 1000 IF - LED Current - mA Icb - Photocurrent -μA imct5210_07 35302520151050 0.0 0.2 0.4 0.6 0.8 1.0 IF - LED Current - mA CTRcb - Collector Base - CTR - % imct5210_08 1001010.1 0.0 0.2 0.4 0.6 0.8 1.0 IF - LED Current - mA CTRcb - Collector Base - CTR - % imct5210_09 100101.1 100 200 300 400 500 600 700 IF - LED Current - mA Ratio - % Vce 10 V 0.4 V imct5210_10 2520151050 IF - LED Current - mA Ice - Collector Current - mA Vce 10 V 0.4 V

Document Number: 83657 For technical questions, please contact: optocoupler.answers@vishay.com www.vishay.com Rev. 1.5, 14-Jan-08 5 MCT5210/MCT5211 Optocoupler, Phototransistor Output, Low Input Current, With Base Connection Vishay Semiconductors Fig. 11 - Collector Current vs. LED Current Fig. 12 - Transistor Current Gain vs. Base Current Fig. 13 - Transfer Curve Fig. 14 - Transfer Curve Fig. 15 - Propagation Delay vs. Base Emitter Resistor Fig. 16 - Propagation Delay vs. Base Emitter Resistor imct5210_11 100101.1 100 IF - LED Current - mA Ice - Collector Current - mA Vce 10 V 0.4 V imct5210_12 1000100101.1 100 200 300 400 500 600 700 800 Ib - Base Current -μA HFE - DC Current Gain - (Ice/Ib) Vce 10 V 0.4 V imct5210_13 1000100101.1 100 500 600 700 800 Icb - Photocurrent -μA IF - LED Current - mA HFE - Transistor Gain Vce =10 V, Ice = Icb x HFE imct5210_14 1000100101.1 100 100 200 300 400 500 600 700 IF - LED Current - mA HFE - Transistor Gain Vce = 0.4 V Ice = Icb x HFE Icb - Photocurrent -μA imct5210_15 710 610 Propagation Delay -μs I F=1m A R L =1 0K Vth = 1.5 V tPHL tPLH V c e=5V Rbe - Base Emitter Resistor - imct5210_16 10 710 610 5 Rbe - Base Emitter Resistor - Propagation Delay - μs IF = 1.6 mA RL= 4.7 K Vth = 1.5 V tPHL tPLH Vce = 5 V

www.vishay.com For technical questions, pleas e contact: optocoupler.answers@vishay.com Document Number: 83657 6 Rev. 1.5, 14-Jan-08 MCT5210/MCT5211 Vishay Semiconductors Optocoupler, Phototransistor Output, Low Input Current, With Base Connection Fig. 17 - Propagation Delay vs. Base Emitter Resistor PACKAGE DIMENSIONS in Inches (millimeters) imct5210_17 10710610510 4 Rbe - Base Emitter Resistor - Probagation Delay - μs I F=3m A R L=3K Vth = 1.5 V V c e=5V tPHL tPLH i178004 0.010 (0.25) typ. 0.114 (2.90) 0.130 (3.0) 0.130 (3.30) 0.150 (3.81) 0.031 (0.80) min. 0.300 (7.62) typ. 0.031 (0.80) 0.035 (0.90) 0.100 (2.54) typ. 0.039 (1.00) min. 0.018 (0.45) 0.022 (0.55) 0.048 0.022 (0.55) 0.248 (6.30) 0.256 (6.50) 0.335 (8.50) 0.343 (8.70) Pin one ID 654 123 18 ° 3° to 9° 0.300 to 0.347 (7.62 to 8.81) typ. ISO method A (0.45) 0.315 (8.0) min. 0.300 (7.62) typ. 0.180 (4.6) 0.160 (4.1) 0.331 (8.4) min. 0.406 (10.3) max. 0.028 (0.7) min. Option 7 18494 min. 0.315 (8.00) 0.020 (0.51) 0.040 (1.02) 0.300 (7.62) ref. 0.375 (9.53) 0.395 (10.03) 0.012 (0.30) typ. 0.0040 (0.102) 0.0098 (0.249) 15° max. Option 9

Document Number: 83657 For technical questions, please contact: optocoupler.answers@vishay.com www.vishay.com Rev. 1.5, 14-Jan-08 7 MCT5210/MCT5211 Optocoupler, Phototransistor Output, Low Input Current, With Base Connection Vishay Semiconductors OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve t he performance of our products, processes, distribution and o perating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances in to the atmosphere whic h are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA. 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Document Number: 91000 www.vishay.com Revision: 18-Jul-08 1 Disclaimer Legal Disclaimer Notice Vishay All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all li ability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permit ted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.