MCT274

MCT270 VISHAY

Document overview

• Manufacturer or author: Provided By www.digicamel.com(free datasheet download site)
• PDF pages: 9

Technical content

Features

• Interfaces with common logic families  Input-output coupling capacitance < 0.5 pF  Industry Standard Dual-in line 6-pin package  5300 V RMS isolation test voltage Agency Approvals  UL - File No. E52744 System Code H or J  DIN EN 60747-5-2(VDE0884) DIN EN 60747-5-5 pending Available with Option 1  CSA 93751  BSI IEC60950 IEC60965

Applications

Switch mode power supply feedback Telephone ring detection Logic ground isolation Logic coupling with high frequency noise rejection For additional design information see Application Note 45

Description

The MCT27x family is an Industry Standard Single Channel Phototransistor Couplers. It includes the MCT270/ 271/ 272/ 273/ 274/ 275/ 276/ 277 couplers. Each optocoupler consists of gallium arsenide infra- red LED and a silicon NPN phototransistor. These couplers are Underwriters Laboratories (UL) listed to comply with a 5300 V RMS isolation test volt- age. This isolation performance is accomplished through Vishay double molding isolation manufacturing pro- cess. Compliance to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5 pending partial discharge isolation specification is available by ordering option 1. These isolation processes and the Vishay ISO9001 quality program results in the highest isolation perfor- mance available for a commercial plastic phototrans- istor optocoupler. The devices are available also in lead formed config- uration suitable for surface mounting and are avail- able either on tape and reel, or in standard tube shipping containers. Order Information For additional information on the available options refer to Option Information. Part Remarks MCT270 CTR > 50 %, DIP-6 MCT271 CTR 45 - 90 %, DIP-6 MCT272 CTR 75 - 150 %, DIP-6 MCT273 CTR 125 - 250 %, DIP-6 MCT274 CTR 225 - 400 %, DIP-6 MCT275 CTR 70 - 210 %, DIP-6 MCT276 CTR 15 - 60 %, DIP-6 MCT277 CTR > 100 %, DIP-6 MCT270-X009 CTR > 50 %, SMD-6 (option 9) MCT277-X009 CTR > 100 %, SMD-6 (option 9)

www.vishay.com Document Number 83724 Rev. 1.4, 19-Apr-04 VISHA YMCT270/ 1/ 2/ 3/ 4/ 5/ 6/ 7 Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can caus e permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of thos e given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Output Coupler Parameter Test condition Symbol Value Unit Reverse voltage V R 6.0 V Forward current I F 60 mA Surge current t < 10 µsI FSM 2.5 A Power dissipation P diss 100 mW Parameter Test condition Symbol Value Unit Collector-emitter breakdown voltage V CEO 70 V Emitter-base breakdown voltage 7.0 V Collector current I C 50 mA t < 1.0 ms I C 100 mA Power dissipation P diss 150 mW Parameter Test condition Symbol Value Unit Isolation test voltage V ISO 5300 V RMS Creepage ≥ 7.0 mm Clearance ≥ 7.0 mm Isolation thickness between emitter and detector ≥ 0.4 mm Comparative tracking index per DIN IEC 112/VDE0303,part 1 175 Isolation resistance V IO = 500 V, Tamb = 25 °C R IO 1012 Ω VIO = 500 V, Tamb = 100 °C R IO 1011 Ω Storage temperature T amb - 55 to + 150 °C Operating temperature T amb - 55 to + 100 °C Junction temperature T j 100 °C Soldering temperature max. 10 s dip soldering: distance to seating plane ≥ 1.5mm Tsld 260 °C

VISHA Y MCT270/ 1/ 2/ 3/ 4/ 5/ 6/ 7 Document Number 83724 Rev. 1.4, 19-Apr-04 Vishay Semiconductors www.vishay.com

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Output Coupler Current Transfer Ratio Parameter Test condition Symbol Min Typ. Max Unit Forward voltage I F = 20 mA V F 1.5 V Reverse current V R = 3.0 V I R 10 µA Capacitance V R = 0, f = 1.0 MHz C O 25 pF Parameter Test condition Symbol Min Typ. Max Unit Collector-emitter breakdown voltage IC = 10 µA, IF = 0 mA BV CEO 30 V Emitter-collector breakdown voltage IE = 10 µA, IF = 0 mA BV ECO 7.0 V Collector-base breakdown voltage IC = 10 µA, IF = 0 mA BV CBO 70 V Collector-emitter leakage current VCE = 10 V, IF = 0 mA I CEO 50 nA Parameter Test condition Symbol Min Typ. Max Unit Resistance, input to output V IO = 500 VDC R IO 1012 Ω Capacitance (input-output) C IO 0.5 pF Collector-emitter saturation voltage ICE = 2.0 mA, IF = 16 mA V CEsat 0.4 V Parameter Test condition Part Symbol Min Typ. Max Unit DC Current Transfer Ratio V CE = 10 V, IF = 10 mA MCT270 CTR DC 50 % MCT271 CTR DC 45 90 % MCT272 CTR DC 75 150 % MCT273 CTR DC 125 250 % MCT274 CTR DC 225 400 % MCT275 CTR DC 70 210 % MCT276 CTR DC 15 60 % MCT277 CTR DC 100 % Current Transfer Ratio (collector-emitter) VCE = 0.4 V, IF = 16 mA MCT271 CTR CE 12.5 % MCT272 CTR CE 12.5 % MCT273 CTR CE 12.5 % MCT274 CTR CE 12.5 % MCT275 CTR CE 12.5 % MCT276 CTR CE 12.5 % MCT277 CTR CE 40 %

www.vishay.com Document Number 83724 Rev. 1.4, 19-Apr-04 VISHA YMCT270/ 1/ 2/ 3/ 4/ 5/ 6/ 7 Vishay Semiconductors Switching Characteristics Typical Characteristics (Tamb = 25 °C unless otherwise specified) Parameter Test condition Part Symbol Min Typ. Max Unit Switching time I C = 2.0 mA, RL = 100 Ω, VCE = 5.0 V MCT270 t on, toff 10 µs MCT271 t on, toff 7.0 µs MCT272 t on, toff 10 µs MCT273 t on, toff 20 µs MCT274 t on, toff 25 µs MCT275 t on, toff 15 µs MCT277 t on, toff 15 µs MCT276 t on, toff 3.5 µs Fig. 1 Forward Voltage vs. Forward Current Fig. 2 Normalized Non-Saturated and Saturated CTR vs. LED Current i4n25_01 100101.1 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 IF - Forward Current - mA VF - Forward Voltage - V TA =– 5 5 ° C TA =2 5 ° C TA =8 5 ° C i4n25_02 Normalized to: 0.0 0.5 1.0 1.5 0 1 10 100 IF - LED Current - mA NCTR NCTR(SAT) NCTR - Normlized CTR CTRce(sat) Vce=0.4 V Vce=10 V, IF=10 mA, TA=25°C TA=25°C Fig. 3 Normalized Non-saturated and Saturated CTR vs. LED Current Fig. 4 Normalized Non-saturated and saturated CTR vs. LED Current i4n25_03 100101.1 0.0 0.5 1.0 1.5 IF- LED Current - mA NCTR - Normalized CTR Normalized to: CTRce(sat) Vce=0.4 V Vce=10 V, IF=10 mA, TA=25°C NCTR NCTR(SAT) TA=50°C i4n25_04 100101.1 0.0 0.5 1.0 1.5 IF - LED Current - mA NCTR - Normalized CTR Normalized to: CTRce(sat) Vce=0.4 V Vce=10 V, IF=10 mA, TA=25°C NCTR NCTR(SAT) TA=70°C

VISHA Y MCT270/ 1/ 2/ 3/ 4/ 5/ 6/ 7 Document Number 83724 Rev. 1.4, 19-Apr-04 Vishay Semiconductors www.vishay.com Fig. 5 Normalized Non-saturated and saturated CTR vs. LED Current Fig. 6 Collector-Emitter Current vs. Temperature and LED Current Fig. 7 Collector-Emitter Leakage Current vs.Temp. i4n25_05 100101.1 0.0 0.5 1.0 1.5 IF - LED Current - mA NCTR - Normalized CTR Normalized to: CTRce(sat) Vce = 0.4 V Vce=10 V, IF=10 mA, TA=25°C NCTR NCTR(SAT) TA=85°C i4n25_06 6050403020100 50°C 70°C 85°C IF - LED Current - mA Ice - Collector Current - mA 25°C i4n25_07 100806040200–20 TA - Ambient Temperature - °C Iceo - Collector-Emitter - nA Typical Vce =1 0V Fig. 8 Normalized CTRcb vs. LED Current and Temp. Fig. 9 Normalized Photocurrent vs. I F and Temp. Fig. 10 Normalized Non-saturated HFE vs. Base Current and Temperature i4n25_08 Normalized to: 0.0 0.5 1.0 1.5 25°C 50°C 70°C IF - LED Current - mA NCTRcb - Normalized CTRcb .1 1 10 100 Vcb=9.3 V, IF=10 mA, TA=25°C i4n25_09 Normalized to: 0.01 IF - LED Current - mA Normalized Photocurrent .1 1 10 100 IF=10 mA, TA=25°C Nib, TA=–20°C Nib, TA= 25°C Nib, TA= 50°C Nib, TA= 70°C i4n25_10 0.4 0.6 1.0 1.2 Normalized to: Ib - Base Current -µA 11 0 1 0 0 1 0 0 0 Ib=20 µA, Vce=10 V, TA=25°C 25°C 70°C –20°C NHFE - Normalized HFE 0.8

www.vishay.com Document Number 83724 Rev. 1.4, 19-Apr-04 VISHA YMCT270/ 1/ 2/ 3/ 4/ 5/ 6/ 7 Vishay Semiconductors Fig. 11 Normalized HFE vs. Base Current and Temp. Fig. 12 Propagation Delay vs. Collector Load Resistor Fig. 13 Switching Timing i4n25_11 0.0 0.5 1.0 1.5 25°C –20°C 50°C70°C NHFE(sat) - Normalized Saturated HFE 1 10 100 1000 Vce=10 V, Ib=20µA TA=25°C Vce=0.4 V Ib - Base Current -µA Normalized to: i4n25_12 100 1000 RL - Collector Load Resistor - kΩ tPLH - Propagation Delay - µs 2.5 2.0 1.5 1.0 .1 1 10 100 IF =10 mA,TA=25°C VCC=5.0 V, Vth=1.5 V tPL H tPHL tPHL - Propagation Delay - µs i4n25_13 IF tR =1.5 V VO tD tS tFtPHL tPLH VTH Fig. 14 Switching Schematic i4n25_14 VCC =5 . 0V F=10 KHz, DF=50% RL VO IF=1 0 mA

VISHA Y MCT270/ 1/ 2/ 3/ 4/ 5/ 6/ 7 Document Number 83724 Rev. 1.4, 19-Apr-04 Vishay Semiconductors www.vishay.com Package Dimensions in Inches (mm) Package Dimensions in Inches (mm) i178004 .010 (.25) typ. .114 (2.90) .130 (3.0) .130 (3.30) .150 (3.81) .031 (0.80) min. .300 (7.62) typ. .031 (0.80) .035 (0.90) .100 (2.54) typ. .039 (1.00) Min. .018 (0.45) .022 (0.55) .048 (0.45) .022 (0.55) .248 (6.30) .256 (6.50) .335 (8.50) .343 (8.70) pin one ID 654 123 18° 3°–9° .300–.347 (7.62–8.81) typ. ISO Method A .343 (8.71) .335 (8.51) .256 (6.50) .248 (6.30) Pin one I.D. .039 (0.99) min. .150 (3.81) .130 (3.30) .100 (2.54) .052 (1.33) .048 (1.22) .040 (1.016) .020 (0.508) .0098 (.25) .0040 (.10) .012 (0.31) .008 (0.20) .300 (7.62) .395 (10.03) .375 (9.63) 3° to 7° 18° min. .315 (8.00) typ. .050 (1.27) typ. SMD ISO Method A i178002 .070 (1.78) .030 (.76) .435 (11.05)

www.vishay.com Document Number 83724 Rev. 1.4, 19-Apr-04 VISHA YMCT270/ 1/ 2/ 3/ 4/ 5/ 6/ 7 Vishay Semiconductors min. .315 (8.00) .020 (.51) .040 (1.02) .300 (7.62) ref. .375 (9.53) .395 (10.03) .012 (.30) typ. .0040 (.102) .0098 (.249) 15° max. 18449 Option 9

VISHA Y MCT270/ 1/ 2/ 3/ 4/ 5/ 6/ 7 Document Number 83724 Rev. 1.4, 19-Apr-04 Vishay Semiconductors www.vishay.com Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423