MCR218-4 ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 1
Technical content
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark iscThyristors MCR218-4
DESCRIPTION
- WithTO-220 packaging
- Highheatdissipationand durability
- Thermowattconstruction forlowthermal
- Glasspassivated junctionsandcentergatefireforgreater parameter uniformity and stability
- MinimumLot-to-Lotvariations forrobustdevice performance andreliable operation
APPLICATIONS
- Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitive peakoff-state voltage 200 V VRRM Repetitive peakreverse voltage 200 V IT(AV) Average on-statecurrent Tc=70℃ 8 A ITSM Surge non-repetitiveon-state current (1/2cycle,sine wave;60HZ;Tc=125℃ ) 100 A PG(AV) Average gatepower dissipation Tp=8.3ms;Tc=70℃ 0.5 W Tj Operating junctiontemperature -40~125 ℃ Tstg Storage temperature -40~150 ℃ ELECTRICALCHARACTERISTICS (TC=25℃ unless otherwisespecified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT IRRM Repetitive peakreverse current VRM=VRRM VDM=VDRM Tj=25℃ Tj=125℃ 2.0 mA IDRM Repetitive peakoff-state current VTM On-state voltage ITM=16A 1.8 V IGT Gate-triggercurrent VD =12 V;RL=100Ω 25 mA VGT Gate-triggervoltage VD =12 V;RL=100Ω 1.5 V Rth(j-c) Thermalresistance Junctionto case 2.0 ℃/W