MCR100-6RLG ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
INCHANGESemiconductor iscProductSpecification isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 iscThyristors MCR100-6RLG
FEATURES
- WithTO-92package
- Sensitivegate triggercurrent
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
APPLICATIONS
- Designedforhigh volume,line-poweredconsumer applications suchas relay and lampdrivers,smallmotorcontrols,gate drivers forlargerthyristors,andsensing anddetection circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) Thermalresistance SYMBOL PARAMETER MAX UNIT Rth(j-c) Junction tocase 75 k/w Rth(j-a) Junction toambientair 200 k/w SYMBOL PARAMETER VALUE UNIT VDRM Repetitive peakoff-state voltage 400 V VRRM Repetitive peakoff-state voltage 400 V IT(RMS) RMS on-state current(180° conduction angle) 0.8 A ITSM Non-repetitivepeak on-state current((tp=10ms)) 10 A IGM Peak gate current((tp=20μs)) 1 A I2t I2t(tp=10ms) 0.415 A2S PGM Peak gate power 2 W PG(AV) Average gatepower 0.1 W Tj Operating junction temperature -40-100 ℃ Tstg Storage temperature range -40-150 ℃
INCHANGESemiconductor iscProductSpecification isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 iscThyristors MCR100-6RLG ELECTRICALCHARACTERISTICS (TC=25℃ unlessotherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT IRRM Repetitive peakreverse current VR=VRRM VR=VRRM; Tj=110℃ 100 μA IDRM Repetitive peakoff-state current VD=VDRM VD=VDRM; Tj=110℃ 100 μA IGT Gatetriggercurrent VD=7V;RL=100Ω 200 μA VTM On-state voltage IT=1.0A,tp=380μs 1.7 V IH Holdingcurrent IT=0.1A,GateOpen 1 5 mA VGT Gatetriggervoltage VD=7V;RL=100Ω 0.8 V