MBT5401 ETC

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Technical content

Pulse Test 300 S, Duty Cycle. 2% MBT5401 MBT5401 SILICON P-N-P HIGH-VOLTAGE TRANSISTOR Type SOT-23 1. BASE 2. COLLECTOR 3. EMITTER Color Code Black Marking MBT5401 ABSOLUTE MAXIMUM RA TINGS Symbol Min. T P V V V I T j tot CBO CEO EBO C stg 55 Descriptions Storage Temperature Junction Temperature Maximum Power Dissipation (T a=25 ) Maximum Collector to Base V oltage Maximum Collector to Emitter V oltage Maximum Collector Current Maximum Emitter to Base V oltage C Max.Typ. Unit 150 250 500 160 150 150 mW V V V mA C C ELECTRICAL CHARACTERISTICS Ta 25 C( ) Descriptions Max. Unit 240 DC Current Gain Symbol h h h FE3 FE2 FE1 Typ.Min. Test Conditions V ICE C5V, 1mA V ICE C5V, 10mA V ICE C5V, 50mA 50Collector Cut-off Current Output Capacitance 8.0 PC Fob 50 uA uAICBO Gain Bandwidth product 100 MHzf T V V CB amb 120V, IE 0mA VCB 10V, I f T E 0mA, 1MHz

150 CCB 120V, IE 0mA,

VCE 10V, IC 10mA MBT5401 Marking P / N THERMAL CHARACTERISTICS R th j-a 500 K/WThermal Resistance at T P R +R +R +T( )j th j-t th t-s th s-a amb SymbolDescriptions Max.Min. Typ. Unit TEL:(852)23413351 FAX:(852)27978275 WEB SITE:http://www.daiwahk.com VCE Sat( ) f 1kHzVCB 10V, IE 1mA, V V V Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage 160 150 V( )VBE Sat 0.5 V V V Collector Saturation Voltage 0.2 1Base Saturation Voltage IC 100uA IE 0 IC 1mA, IB 0 IC 50mA, IB 5mA I I C 50mA, IB 5mA IC 10mA, IB 1mA C 10mA, IB 1mA Small-Signal Current Gain 200hfe Emitter to Base Breakdown Voltage 5 BV BV BV EBO CBO CEO IC 0mA, IE 10uA