MB2S_V01 VISHAY
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
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Technical content
MB2S, MB4S, MB6S www.vishay.com Vishay General Semiconductor Revision: 04-Aug-2020 1 Document Number: 88661 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Miniature Glass Passivated Fast Recovery Surface-Mount Bridge Rectifier LINKS TO ADDITIONAL RESOURCES
FEATURES
- UL recognition, file number E54214
- Saves space on printed circuit boards
- Ideal for automated placement
- High surge current capability
- Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
- Material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS General purpose use in AC/DC bridge full wave rectification for power supply, lighting ball aster, battery charger, home appliances, office equipment, and telecommunication applications. MECHANICAL DATA Case: MBS (TO-269AA) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: as marked on body Notes (1) On glass epoxy PCB mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads PRIMARY CHARACTERISTICS IF(AV) 0.5 A VRRM 200 V, 400 V, 600 V IFSM 35 A IR 5 μA VF at IF = 0.4 A 1.0 V TJ max. 150 °C Package MBS (TO-269AA) Circuit configuration Quad MBS (TO-269AA) 333DDD3 D 3D Models MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL MB2S MB4S MB6S UNIT Device marking code 2 4 6 Maximum repetitive peak reverse voltage V RRM 200 400 600 V Maximum RMS voltage V RMS 140 280 420 V Maximum DC blocking voltage V DC 200 400 600 V Maximum average forward output rectified current (fig. 1) on glass-epoxy PCB (1) IF(AV) 0.5 A on aluminum substrate (2) 0.8 Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 35 A Rating for fusing (t < 8.3 ms) I 2t5 . 0 A 2s Operating junction and storage temperature range T J, TSTG -55 to +150 °C
MB2S, MB4S, MB6S www.vishay.com Vishay General Semiconductor Revision: 04-Aug-2020 2 Document Number: 88661 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes (1) On glass epoxy PCB mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL MB2S MB4S MB6S UNIT Maximum instantaneous forward voltage per diode IF = 0.4 A V F 1.0 V Maximum DC reverse current at rated DC blocking voltage per diode T A = 25 °C IR 5.0 μA TA = 125 °C 100 Typical junction capacitance per diode 4.0 V, 1 MHz C J 13 pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL MB2S MB4S MB6S UNIT Typical thermal resistance R JA (1) 85 °C/W RJA (2) 70 RJL (1) 20 ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g ) PREFERRED PACKAGE CODE BA SE QUANTITY DELIVERY MODE MB2S-E3/45 0.22 45 100 Tube MB2S-E3/80 0.22 80 3000 13" diam eter paper tape and reel
MB2S, MB4S, MB6S www.vishay.com Vishay General Semiconductor Revision: 04-Aug-2020 3 Document Number: 88661 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Fig. 1 - Derating Curve for Output Rectified Current Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Fig. 3 - Typical Forward Voltage Characteristics Per Diode Fig. 4 - Typical Reverse Leakage Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode 0 20 40 60 80 100 120 140 160 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Aluminum Substrate Glass Epoxy PCB Resistive or Inductive Load Average For ward Rectified C urrent (A) Ambient Temperature (°C) 1 10 100 f = 50 Hz f = 60 Hz TA = 40 °C Single Half Sine-Wave Number of Cycles Peak For ward S urge C urrent (A)
1.0 Cycle
0.01 0.1 TJ = 150 °C TJ = 25 °C Pulse Width = 300 µs 1 % Duty Cycle Instantaneous Forward Voltage (V) Instantaneo us For ward C urrent (A) 0 20 40 60 80 100 0.01 0.1 100 TJ = 125 °C TJ = 25 °C Percent of Rated Peak Reverse Voltage (%) Instantaneo us Re verse Leakage Current (µA) 0.1 1 10 100 1000 Reverse Voltage (V) Junction Capacitance (pF) TJ = 25 °C f = 1.0 MHz V sig = 50 mVp-p
MB2S, MB4S, MB6S www.vishay.com Vishay General Semiconductor Revision: 04-Aug-2020 4 Document Number: 88661 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PACKAGE OUTLINE DIMENSIONS in inches (millimeters) 0.029 (0.74) 0.017 (0.43) 0 to 8° 0.049 (1.24) 0.039 (0.99) 0.062 (1.57) 0.058 (1.47) 0.016 (0.41) 0.006 (0.15) 0.018 (0.46) 0.014 (0.36) 0.008 (0.20) 0.004 (0.10) 0.114 (2.90) 0.110 (2.80) 0.058 (1.47) 0.054 (1.37) 0.252 (6.40) 0.272 (6.90) 0.106 (2.70) 0.090 (2.30) 0.0075 (0.19) 0.0065 (0.16) 0.105 (2.67) 0.095 (2.41) 0.195 (4.95) 0.179 (4.55) 0.144 (3.65) 0.161 (4.10) 0.205 (5.21) 0.195 (4.95) 0.114 (2.90) 0.094 (2.40) 0.038 (0.96) 0.019 (0.48) 0.272 MAX. (6.91 MAX.) 0.030 MIN. (0.76 MIN.) 0.023 MIN. (0.58 MIN.) 0.105 (2.67) 0.095 (2.41) MBS (TO-269AA) Mounting Pad Layout
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