MB1S MAKOSEMI

Document overview

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Technical content

Features

  • Surface Mount Package
  • Glass Passivated Diode Construction
  • Moisture Resistant Epoxy Case
  • High Surge Current Capability Maximum Ratings
  • Operating Temperature: -55°C to +150°C
  • Storage Temperature: -55°C to +150°C MCC Catalog Number Device Marking Maximum Rccurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage MB05S 50V 35V 50V MB1S 100V 70V 100V MB2S 200V 140V 200V MB4S 400V 280V 400V MB6S 600V 420V 600V MB8S 800V 560V 800V MB10S 1000V 700V 1000V Electrical Characteristics @ 25°C Unless Otherwise Specified Average Forward Current IF(AV) 0.5A Note1 TA = 30°C Peak Forward Surge Current I FSM 30A 8.3ms, half sine Maximum Instantaneous Forward Voltage V F 1.0V I FM = 0.5A; TA = 25°C Maximum DC Reverse Current At Rated DC Blocking Voltage I R 5 µA TA = 25°C Typical Junction Capacitance C J 25pF Measured at 1.0MHz, V R=4.0V *Pulse Test: Pulse Width 300µsec, Duty Cycle 1% MBS -1 MAKO Semiconductor Co., Limited /G01/G02/G03/G04/G05/G06/G02/G07/G05/G06 /G08/G08/G08/G08/G02 /G05 /G09 /G0A/G04/G06/G03/G03 /G01/G02/G03 /G03/G02/G05 /G03/G0B/G0C /G03/G02/G05 /G03/G0B/G0C /G05/G07/G0D/G04 /G0B.252 .272 6.40 6.91 /G15 /G0E/G13/G10/G11 /G0E/G0F/G13/G11 /G12/G0E/G14/G0F /G12/G0E/G16/G17 /G09 /G0F/G0E/G14/G11 /G0E/G0F/G11/G11 /G18/G0E/G16/G19 /G18/G0E/G10/G14 /G08 /G08 /G01 /G0E/G0F/G19/G13 /G0E/G0F/G10/G13 /G14/G0E/G11/G17 /G14/G0E/G19/G18 /G04.017 .029 0.45 0.75 /G1A.090 .106 2.30 2.70 /G1B.004 .008 0.10 0.20 /G0A.021 .023 0.53 0.58 /G1D.055 .065 1.40 1.65 /G1F /G0E/G0F/G13/G17 /G0E/G0F/G0F/G17 /G12/G0E/G17/G12 /G12/G0E/G10/G17 M .040 .050 1.02 1.27 /G01.008 .014 0.15 0.35 Notch in case B C D A F GH E ∼∼ ∼∼ ∼∼ ∼∼ L K J M N MB05S MB1S MB2S MB4S MB6S MB8S MB10S 0.8A Note2 T A = 30°C Note1. Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts ( 20 x 20 x 6.4mm ) mounte on 0.05 x 0.05 “( 13 x 13 mm ) solder pad. MAKO Semiconductor Co., Limited http://www.makosemi.hk/