M116 VISHAY
Document overview
- Manufacturer or author: Provided By www.digicamel.com(free datasheet download site)
- PDF pages: 1
Technical content
--:IE \\() enhancement-type H n-channel MOSFET --:IE designed for Performance Curves
- • • MBN MBNA See Section 4
- General Purpose Amplifiers BENEFITS
- Analog Switches • High Input Impedance 1 pA Maximum (Ml17)
- Digital Switching • Low I nsertion Loss RDS(on) = 100 n Maximum
- Rugged Zener Diode Input Protection TO-72 See Section 5 DL DL~ ABSOLUTE MAXIMUM RATINGS (25°C) !\\ B Total Device Dissipation M116 M117 ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted) Characteristic M116 MI17 Unit Test Condition Min Max Min Max 1 IGSS Gate-Body Leakage 100 1.0 pA VGS = 20 V. VOS = VBS = 0 12" VGS(th) Gate Threshold Voltage 1 5 1 5 VGS = VOS. 10 = 10pA. VBS = 0 1"3 BVOSS Drain-Source Breakdown Voltage 30 30 V 10 = 1 pA. VGS = VBS" 0 I-S 4 T BVSOS Source-Drain Breakdown Voltage 30 30 IS - 1 pA. VGO = VBO" 0 ISA BVGBS Gate-Body Breakdown Voltage 30 60 ±100 IG = 10pA. VSB = VOB" 0 1ST 1010ff) Drain Cutoff Current 10 10 nA VOS" 20 V. VGS = VBS = 0 1-::- I 7 C ISlo111 Source Cutoff Current 10 10 VSO = 20 V. VGD = VBO" 0 Is 10(on) ON Orai n Current 2 20 2 20 rnA VGS = VOS = +10V. VBS = 0 1- 9 100 100 n VGS = 20 V. 10" l00pA. VBS" 0 110 rOS(on) Drain Source ON Resistance 200 200 VGS = 10 V. 10" l00IlA. VBS" 0 11 Ciss Input Capacitance 10 8 VGB" O. VOB" 10 V. VBS = 0 1""12 0 C gs Gate-Source Capacitance 2_5 2.5 VGB" VOB = 0 I" 1 MHz 11"3 Y Cgd Gate-Drain Capacitance 2.5 2.5 pF Body Guarded _N 14 Cdb Drain-Body Capacitance 7 7 VGB-O. VOa" lOV MBN MBNA NOTE: 1. Gate-oxide breakdown voltage. Permanent damage may result if voltages greater than ± 100 are applied to the gate. © 1977 Siliconix incorporated 3-104