M106 VISHAY
Document overview
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Technical content
d • d ~ Performance Curves MACA es.gne tor... MACB MACC See Section 4
- Analog Switches
- Differential Amplifiers
- Impedance Converters Ml06 ABSOLUTE MAXIMUM RATINGS (25°C) Gate-to-Source Voltage (1\\11106/7) ... __ _ -30 V Gate-to-Source Voltage (1\\11108) _______ _ -50 V Operating Junction Temperature ... -55 to 125°C Total Dissipation at 25°C Ambient Temperature BENEFITS
- High Input Impedance at High Temp erature IGSS = 30 pA Typical, T = 125°C (M108)
- High Off-Isolation ID(off) = 200 pA Maximum TO-99 See Section 5 Ml07 ° 0, ' NO Ml08 G1 07 S2 Lead T em peratu re NO BOTTOM VIEW 0, 0 8 NC BOTTOM VIEW ELECTRICAL CHARACTERISTICS (25'C unless otherwise noted) Characteristic Ml06. Ml07 M108 Umt Test ConditIOns Moo M" Moo M" 1 BVOSS Drain-Source Breakdown Voltage -30 -30 '0 - -1 J1A. VGS ~ Vas = 0 BVSDS Source-Drain Breakdown Voltage -30 -30 V 'S - -1 [.lA. VGO - VSO - 0 BVGBS Gate-Body Breakdown Voltage -30 .,00' IG ~ -1 0 f.1A, VS B - VOS - 0 14~ IGSS Gate-Body Leakage -100 -1 Ves - -20Y, Vos -Vas-O
15 A IO(off} Drain Cutoff Current -200 -200 pA VOS --20V,VGS-VSS-O
I. T IS~off} Source Cutoff Current -200 -200 VSD - -20 V, VGD" Vso - 0 17~ VGS(th) Gate Threshold Voltage -2 -<l -2 -8 V VGS '" VDS,IO '" -lO/JA, VSS '" 0 I. 10(on) Dram Current ~ 10 -10 rnA VOS -10V,VGS--10V,VBS 0 9' 1S0 150 Q VGS '" -15 V,IO = -100/JA, VSS = 0 rDS(on) Dram Source ON Resistance 120 120 VGS - -20V, 10 '" -100/JA, VSS ~ 0 11 91, Common-Source Forward 2,000 2,000 ,umho VOS - -lOV, VGS- -10V,VSS-0 Transconductance f = 1 kHz y C g, Gate-Source CapaCitance 4 4 VGB '" VOB = 0, f '" 1 MHz, ON Cgd Gate-Drain Capacitance 4 4 Body Guarded """14 A C,b Source-Body CapaCitance 5.5 5.5 VGS"' 0, VOS = VSB '" -5 v, _M pF f= 1 MHz 15 I Cdb Drain-Body Capacitance S.5 55 VGB = 0, VDB = VSB '" -5 V, 16 Cd, Drain-Source Capacitance 0.5 05 f ~ 1 MHz, Sody Guarded -Gate-OXide Breakdown Voltage MACA MACB MACC © 1977 Siliconix Incorporated 3-101 -o .... -o 00