LTC3108 LINER
Document overview
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Technical content
DESCRIPTION
Converter and Power Manager The L TC®3108 is a highly integrated DC/DC converter ideal for harvesting and managing surplus energy from extremely low input voltage sources such as TEG (thermoelectric generators), thermopiles and small solar cells. The step-up topology operates from input voltages as low as 20mV . Using a small step-up transformer , the L TC3108 provides a complete power management solution for wireless sensing and data acquisition. The 2.2V LDO powers an external microprocessor , while the main output is programmed to one of four fi xed voltages to power a wireless transmitter or sensors. The power good indicator signals that the main output voltage is within regulation. A second output can be enabled by the host. A storage capacitor provides power when the input voltage source is unavailable. Extremely low quiescent current and high effi ciency design ensure the fastest possible charge times of the output reservoir capacitor . The L TC3108 is available in a small, thermally enhanced 12-lead (4mm × 3mm) DFN package and a 16-lead SSOP package. Wireless Remote Sensor Application Powered From a Peltier Cell
FEATURES
APPLICATIONS
n Operates from Inputs of 20mV n Complete Energy Harvesting Power Management System - Selectable V OUT of 2.35V , 3.3V , 4.1V or 5V - LDO: 2.2V at 3mA - Logic Controlled Output - Reserve Energy Output n Power Good Indicator n Ultralow IQ: 6μA n Uses Compact Step-Up T ransformers n Small 12-Lead (4mm × 3mm) DFN or 16-Lead SSOP Packages n Remote Sensors and Radio Power n Surplus Heat Energy Harvesting n HVAC n Industrial Wireless Sensing n Automatic Metering n Building Automation n Indoor Light Energy Harvesting
3108 TA01a
2.2V 470μF PGD VLDO VSTORE+ VOUT VOUT2_EN L TC3108 VAUX GND 0.1F 6.3V 3.3V 1μF 1nF 220μF 1:100 330pF SENSORS RF LINK μP 2.2μF VOUT Charge Time L, L T , L TC, L TM, Linear Technology and the Linear logo are registered trademarks of Linear Technology Corporation. All other trademarks are the property of their respective owners. VIN (mV) TIME (sec) 100 1000
3108 TA01b
0 100 150 25050 200 300 350 400 VOUT = 3.3V COUT = 470μF 1:100 Ratio 1:50 Ratio 1:20 Ratio Electrical Specifications Subject to Change
V (Note 1) GND SW V OUT2_EN VS1 VS2 VAUX VSTORE V OUT VOUT2 VLDO PGD TOP VIEW DE PACKAGE 12-LEAD (4mm s 3mm) PLASTIC DFN TJMAX = 125°C, θJA = 43°C/W , θJC = 4.3°C/W EXPOSED PAD (PIN 13) IS GND, MUST BE SOLDERED TO PCB (NOTE 4) GN PACKAGE 16-LEAD PLASTIC SSOP NARROW TOP VIEW GND VAUX VSTORE V OUT VOUT2 VLDO PGD GND GND SW V OUT2_EN VS1 VS2 GND TJMAX = 125°C, θJA = 110°C/W , θJC = 40°C/W PIN CONFIGURATION ORDER INFORMATION LEAD FREE FINISH TAPE AND REEL PART MARKING* PACKAGE DESCRIPTION TEMPERATURE RANGE L TC3108EDE#PBF L TC3108EDE#TRPBF LFJM 12-Lead (4mm × 3mm) Plastic DFN –40°C to 85°C L TC3108IDE#PBF L TC3108IDE#TRPBF LFJM 12-Lead (4mm × 3mm) Plastic DFN –40°C to 85°C L TC3108EGN#PBF L TC3108EGN#TRPBF 3108 16-Lead Plastic SSOP –40°C to 85°C L TC3108IGN#PBF L TC3108IGN#TRPBF 3108 16-Lead Plastic SSOP –40°C to 85°C Consult L TC Marketing for parts specifi ed with wider operating temperature ranges. *The temperature grade is identifi ed by a label on the shipping container . For more information on lead free part marking, go to: http://www.linear .com/leadfree/ For more information on tape and reel specifi cations, go to: http://www.linear .com/tapeandreel/
ELECTRICAL CHARACTERISTICS
Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: The L TC3108E is guaranteed to meet performance specifi cations from 0°C to 85°C. Specifi cations over the –40°C to 85°C operating temperature range are assured by design, characterization and correlation PARAMETER CONDITIONS MIN TYP MAX UNITS Minimum Start-Up Voltage Using 1:100 T ransformer Turns Ratio 20 50 mV No-Load Input Current Using 1:100 T ransformer Turns Ratio; V IN = 20mV , VOUT2_EN = 0V; All Outputs Charged and in Regulation 3m A Input Voltage Range Using 1:100 T ransformer Turns Ratio l VSTARTUP 500 mV Output Voltage VS1 = VS2 = GND VS1 = VAUX, VS2 = GND VS1 = GND, VS2 = VAUX VS1 = VS2 = VAUX l 2.30 3.234 4.018 4.90 2.350 3.300 4.100 5.000 2.40 3.366 4.182 5.10 V V V V V OUT Quiescent Current V OUT = 3.3V , VOUT2_EN = 0V 0.4 μA VAUX Quiescent Current No Load, All Outputs Charged 6 μA LDO Output Voltage 0.5mA Load l 2.156 2.2 2.244 V LDO Load Regulation For 0mA to 2mA Load 0.5 1 % LDO Line Regulation For VAUX from 2.5V to 5V 0.01 0.02 % LDO Dropout Voltage I LDO = 2mA l 100 200 mV LDO Current Limit l 34 6 m A VOUT Current Limit l 4.5 7 mA VSTORE Current Limit l 4.5 7 mA VAUX Clamp Voltage Current into VAUX = 5mA l 5 5.25 5.5 V VSTORE Leakage Current VSTORE = 5V 0.1 μA V OUT2 Leakage Current V OUT2 = 0V , VOUT2_EN = 0V 1 μA VS1, VS2 Threshold Voltage l 0.4 0.85 1.2 V VS1, VS2 Input Current VS1 = VS2 = 5V 0.01 0.1 μA PGOOD Threshold (Rising) Measured Relative to the V OUT Voltage –7 % PGOOD Threshold (Falling) Measured Relative to the V OUT Voltage –9 % PGOOD VOL Sink Current = 100μA 0.3 0.5 V PGOOD VOH Source Current = 0 2.1 2.2 2.3 V PGOOD Pull-Up Resistance 1M Ω VOUT2_EN Threshold Voltage V OUT2_EN Rising l 0.4 1 1.3 V VOUT2_EN Pull-Down Resistance 5M Ω VOUT2 Turn-On Time 5μ s VOUT2 Turn-Off Time (Note 3) 0.15 μs VOUT2 Current Limit l 0.2 0.3 0.5 A VOUT2 Current Limit Response Time (Note 3) 350 ns VOUT2 P-Channel MOSFET On-Resistance V OUT = 3.3V (Note 3) 1.3 Ω N-Channel MOSFET On-Resistance C2 = 5V (Note 3) 0.5 Ω The l denotes the specifi cations which apply over the specifi ed operating junction temperature range of –40°C to 85°C, otherwise specifi cations are at TA = 25°C. VAUX = 5V , unless otherwise noted. with statistical process controls. The L TC3108I is guaranteed to meet specifi cations over the full –40°C to 85°C operating temperature range. Note 3: Specifi cation is guaranteed by design and not 100% tested in production. Note 4: Failure to solder the exposed backside of the package to the PC board ground plane will result in a thermal resistance much higher than 43°C/W .
TYPICAL PERFORMANCE CHARACTERISTICS IOUT vs dT and TEG Size, 1:100 Ratio IOUT and Effi ciency vs VIN, 1:20 Ratio T ransformer Input Resistance vs VIN (VOUT Shorted) IOUT vs VIN and Source Resistance, 1:20 Ratio TA = 25°C, unless otherwise noted. IOUT and Effi ciency vs VIN, 1:50 Ratio T ransformer IOUT and Effi ciency vs VIN, 1:100 Ratio T ransformer IOUT vs VIN and Source Resistance, 1:50 Ratio IOUT vs VIN and Source Resistance, 1:100 Ratio VIN (mV) IOUT (μA) 2000 2500 1500 1000 200100 300 400 500 3000 EFFICIENCY (%)40
3108 G01
VIN (mV) IOUT (μA) 1200 1500 900 600 200100 300 400 300 1800 EFFICIENCY (%)40
3108 G02
VIN (mV) IOUT (μA) 800 1000 600 400 200100 300 400 200 1200 EFFICIENCY (%)40
3108 G03
VIN (mV) INPUT RESISTANCE (Ω)
3108 G04
20 60 80 12040 100 140 180160 200 1:100 RATIO 1:50 RATIO 1:20 RATIO VIN OPEN CIRCUIT (mV) IVOUT (μA)
3108 G05
10Ω 15Ω VIN OPEN CIRCUIT (mV) IOUT (μA)
3108 G06
20 60 80 12040 100 140 180160 200 100 1000 10Ω 15Ω VIN OPEN CIRCUIT (mV) IVOUT (μA)
3108 G07
20 60 80 12040 100 140 180160 200 100 1000 1Ω 10Ω 15Ω dT ACROSS TEG (°C) 0.1 IOUT (μA) 100 1000 1 10 100
3108 G08
0.625" SQUARE 1.5" SQUARE
TYPICAL PERFORMANCE CHARACTERISTICS Resonant Switching Waveforms Start-Up Voltage Sequencing VOUT and PGD Response During a Step Load VOUT Ripple LDO Step Load Response Enable Input and VOUT2 Running on Storage Capacitor TA = 25°C, unless otherwise noted. LDO Dropout Voltage LDO LOAD (mA) –1.00 DROP IN VLDO (%) –0.75 –0.50 0.5 1 1.5 2 3 2.5 3.5 –0.25 0.00
3108 G10
LDO LOAD (mA)
0.00 DROPOUT VOLTAGE (V)
0.04 0.08 0.12 0.5 1 1.5 2 3 2.5 3.5 0.16 0.20 0.02 0.06 0.10 0.14 0.18
3108 G11
10μs/DIV C1 PIN 2V/DIV C2 PIN 2V/DIV SW PIN 50mV/DIV
3108 G09
VIN = 20mV 1:100 RATIO TRANSFORMER 10sec/DIV
3108 G12
CH2, V OUT 1V/DIV CH3, VLDO 1V/DIV VIN = 50mV 1:100 RATIO TRANSFORMER C OUT = 220μF CSTORE = 470μF C LDO = 2.2μF 5ms/DIV
3108 G13
C OUT = 220μF 100ms/DIV
3108 G14
30μA LOAD C OUT = 220μF 1ms/DIV
3108 G16
CH2, VOUT2 1V/DIV CH1 VOUT2_EN 1V/DIV 10mA LOAD ON VOUT2 COUT = 220μF 5sec/DIV
3108 G17
CH2, VOUT 1V/DIV CH1, VIN 50mV/DIV CH3 VSTORE 1V/DIV CH4, VLDO 1V/DIV CSTORE = 470μF VOUT LOAD = 100μA
storage capacitor or to a rechargeable battery. OUT2 (Pin 4/Pin 5): Switched Output of the Converter . in this output is limited to 0.3A typical. 2.2μF or larger ceramic capacitor from this pin to GND. If not used, this pin should be tied to VAUX. this pin can be left open or grounded. winding of the step-up transformer . winding of the step-up transformer . Table 1. Regulated Voltage Using Pins VS1 and VS2
The L TC3108 is designed to use a small external step-up transformer to create an ultralow input voltage step-up DC/DC converter and power manager . It is ideally suited for low power wireless sensors and other applications in which surplus energy harvesting is used to generate system power because traditional battery power is inconvenient or impractical. The L TC3108 is designed to manage the charging and regulation of multiple outputs in a system in which the average power draw is very low, but there may be periodic pulses of higher load current required. This is typical of wireless sensor applications, where the quiescent power draw is extremely low most of the time, except for transmit bursts when circuitry is powered up to make measure- ments and transmit data. The L TC3108 can also be used to trickle charge a standard capacitor , supercapacitor or rechargeable battery, using energy harvested from a Peltier or photovoltaic cell. (Refer to the Block Diagram) 3108 BD SW 5.25V 1.2V VREF SW VOUT VHOLD VLDO OFF ON VOUT2 VOUT2 VOUT VOUT PROGRAM COUT PGOOD VOUT2_EN VOUT VS1 VS2 PGD VSTORE CIN VIN VLDO CSTORE1μF 1:100 SYNC RECTIFY REFERENCE VOUT 2.2V CHARGE CONTROL VAUX ILIM L TC3108 1.3Ω 0.5Ω EXPOSED PAD (DFN) 2.2μF GND (SSOP) VREF LDO VREF VBEST (DFN Package Shown)
information on selecting the transformer . to the external VAUX capacitor and the other outputs. VAUX, which should be bypassed with a 1μF capacitor . OUT is allowed to start charging. becomes active as soon as VAUX exceeds 2V . ing the input voltage, improving effi ciency. output is current limited to 4mA typical. they be tied to ground or VAUX. Table 2. Regulated Voltage Using Pins VS1 and VS2 value, the charging current is turned off. that are susceptible to board leakage.
In a typical application, a storage capacitor (typically a few hundred microfarads) is connected to V OUT. As soon as VAUX exceeds 2.5V , the VOUT capacitor will be allowed to charge up to its regulated voltage. The current available to charge the capacitor will depend on the input voltage and transformer turns ratio, but is limited to about 4mA. PGOOD A power good comparator monitors the V OUT voltage. The PGD pin is an open-drain output with a weak pull-up (1MΩ) to the LDO voltage. Once V OUT has charged to within 7% of its regulated voltage, the PGD output will go high. If V OUT drops more than 9% from its regulated voltage, PGD will go low. The PGD output is designed to drive a microprocessor or other chip I/O and is not intended to drive a higher current load such as an LED. Pulling PGD up externally to a voltage greater than VLDO will cause a small current to be sourced into VLDO. PGD can be pulled low in a wire-OR confi guration with other circuitry. V OUT2 VOUT2 is an output that can be turned on and off by the host, using the V OUT2_EN pin. When enabled, V OUT2 is connected to V OUT through a 1.3Ω P-channel MOSFET switch. This output, controlled by a host processor , can be used to power external circuits such as sensors and amplifi ers, that do not have a low power sleep or shutdown capability. V OUT2 can be used to power these circuits only when they are needed. Minimizing the amount of decoupling capacitance on VOUT2 will allow it to be switched on and off faster , allowing shorter burst times and, therefore, smaller duty cycles in pulsed applications such as a wireless sensor/transmit- ter . A small V OUT2 capacitor will also minimize the energy that will be wasted in charging the capacitor every time V OUT2 is enabled. VOUT2 has a soft-start time of about 5μs to limit capacitor charging current and minimize glitching of the main output when V OUT2 is enabled. It also has a current limiting circuit that limits the peak current to 0.3A typical. The V OUT2 enable input has a typical threshold of 1V with 100mV of hysteresis, making it logic-compatible. If V OUT2_EN (which has an internal pull-down resistor) is low, VOUT2 will be off. Driving VOUT2_EN high will turn on the VOUT2 output. Note that while VOUT2_EN is high, the current limiting cir- cuitry for VOUT2 draws an extra 8μA of quiescent current from VOUT. This added current draw has a negligible effect on the application and capacitor sizing, since the load on the V OUT2 output, when enabled, is likely to be orders of magnitude higher than 8μA. VSTORE The VSTORE output can be used to charge a large storage capacitor or rechargeable battery after VOUT has reached regulation. Once VOUT has reached regulation, the VSTORE output will be allowed to charge up to the VAUX voltage. The storage element on VSTORE can be used to power the system in the event that the input source is lost, or is unable to provide the current demanded by the V OUT, VOUT2 and LDO outputs. If VAUX drops below VSTORE, the L TC3108 will automatically draw current from the stor- age element. Note that it may take a long time to charge a large capacitor , depending on the input energy available and the loading on V OUT and VLDO. Since the maximum current from VSTORE is limited to a few milliamps, it can safely be used to trickle-charge NiCd or NiMH rechargeable batteries for energy storage when the input voltage is lost. Note that the VSTORE capacitor cannot supply large pulse currents to V OUT. Any pulse load on VOUT must be handled by the VOUT capacitor . Short-Circuit Protection All outputs of the L TC3108 are current limited to protect against short-circuits to ground. Output Voltage Sequencing A timing diagram showing the typical charging and voltage sequencing of the outputs is shown in Figure 1. Note: time not to scale. OPERATION
Figure 1. Output Voltage Sequencing (with VOUT Programmed for 3.3V)
3108 F01a
indicating that enough energy is available for a burst. Figure 2. Typical Performance of a Peltier Cell Acting as a Thermoelectric Generator voltage times the turns ratio be less than 50. the period of the resonant switching frequency. tions, sandwiched between two parallel ceramic plates.
3108 F02
of temperature differential. of Peltier cell manufacturers is given in Table 3. Table 3. Peltier Cell Manufacturers used (typically 1:20, depending on the application). can be grounded or left open.
low the input voltage can be for the converter to start. for some recommended transformers. Table 4. Recommended T ransformers pulse will allow operation with less input energy. any benefi cial storage time.
tors used for V OUT and VSTORE should be low leakage. See Table 5 for recommended storage capacitors. Table 5. Recommended Storage Capacitors
013 RLC (Low Leakage)
is not as critical as with many other DC/DC converters. There are, however , a number of things to consider . lower effi ciency and increase capacitor charge time. board layout is shown in Figure 3. Figure 3. Example Component Placement for T wo-Layer PC Board (DFN Package)
3108 FO3
the capacitor . A method for calculating the maximum rate at which the load pulses can occur for a given output cur- rent from the L TC3108 will also be shown. In this example, V OUT is set to 3.3V , and the maximum allowed voltage droop during a transmit burst is 10%, or 0.33V . The duration of a transmit burst is 1ms, with a total average current requirement of 40mA during the burst. Given these factors, the minimum required capacitance on V OUT is: Cµ F mA ms V µFOUT () .≥ =40 1 03 3 121 Note that this equation neglects the effect of capacitor ESR on output voltage droop. For most ceramic or low ESR tantalum capacitors, the ESR will have a negligible effect at these load currents. A standard value of 150μF or larger could be used for C OUT in this case. Note that the load current is the total current draw on V OUT, VOUT2 and VLDO, since the current for all of these outputs must come from VOUT during a burst. Current contribution from the holdup capacitor on VSTORE is not considered, since it may not be able to recharge between bursts. Also, it is assumed that the charge current from the L TC3108 is negligible compared to the magnitude of the load current during the burst. To calculate the maximum rate at which load bursts can occur , determine how much charge current is available from the L TC3108 V OUT pin given the input voltage source being used. This number is best found empirically, since there are many factors affecting the effi ciency of the converter . Also determine what the total load current is on V OUT during the sleep state (between bursts). Note that this must include any losses, such as storage ca- pacitor leakage. Assume, for instance, that the charge current from the L TC3108 is 50μA and the total current drawn on V OUT in the sleep state is 17μA, including capacitor leakage. In addition, use the value of 150μF for the V OUT capacitor . The maximum transmit rate (neglecting the duration of the transmit burst, which is typically very short) is then given by: t µF V µA µA or fMAX= − ==150 0 33 50 17 15 06 6 6. () . sec . H Hz Therefore, in this application example, the circuit can sup- port a 1ms transmit burst every 1.5 seconds. It can be determined that for systems that only need to transmit every few seconds (or minutes or hours), the average charge current required is extremely small, as long as the sleep current is low. Even if the available charge current in the example above was only 10μA and the sleep current was only 5μA, it could still transmit a burst every ten seconds. The following formula enables the user to calculate the time it will take to charge the LDO output capacitor and the V OUT capacitor the fi rst time, from 0V . Here again, the charge current available from the L TC3108 must be known. For this calculation, it is assumed that the LDO output capacitor is 2.2μF . t Vµ F IILDO CHG LDO = − 22 22. . If there were 50μA of charge current available and a 5μA load on the LDO (when the processor is sleeping), the time for the LDO to reach regulation would be 107ms. If V OUT were programmed to 3.3V and the VOUT capacitor was 150μF , the time for VOUT to reach regulation would be: t Vµ F II tVOUT CHG VOUT LDO= − +3 3 150. If there were 50μA of charge current available and 5μA of load on VOUT, the time for VOUT to reach regulation after the initial application of power would be 11.1 seconds. APPLICATIONS INFORMATION
In many pulsed load applications, the duration, magnitude and frequency of the load current bursts are known and fi xed. In these cases, the average charge current required from the L TC3108 to support the average load must be calculated, which can be easily done by the following: II It TCHG Q BURST≥ + Where IQ is the sleep current on VOUT required by the ex- ternal circuitry in between bursts (including cap leakage), I BURST is the total load current during the burst, t is the duration of the burst and T is the period of the transmit burst rate (essentially the time between bursts). In this example, I Q = 5μA, IBURST = 100mA, t = 5ms and T = one hour . The average charge current required from the L TC3108 would be: Iµ A mA µACHG ≥ +=5 100 0 005 3600 51 4 . sec sec . Therefore, if the L TC3108 has an input voltage that allows it to supply a charge current greater than 5.14μA, the application can support 100mA bursts lasting 5ms every hour . It can be determined that the sleep current of 5μA is the dominant factor because the transmit duty cycle is so small (0.00014%). Note that for a V OUT of 3.3V , the average power required by this application is only 17μW (not including converter losses). Note that the charge current available from the L TC3108 has no effect on the sizing of the V OUT capacitor (if it is assumed that the load current during a burst is much larger than the charge current), and the V OUT capacitor has no effect on the maximum allowed burst rate. Peltier-Powered Energy Harvester for Remote Sensor Applications TEG
3108 TA02
COOPER BUSSMAN PB-5ROH104-R OR KR-5R5H104-R VOUT2 VOUT2 PGOOD 2.2V COUT PGD VLDO VSTORE VOUT VOUT2_EN L TC3108 VAUX GND CSTORE 0.1F 6.3V 3.3V 1μF 1nF CIN 1:100 T1: COILCRAFT LPR6235-752SML 330pF ΔT = 1°C TO 20°C SENSORS XMTR μP 2.2μF ONOFF 3.3V TYPICAL APPLICATIONS
Li-Ion Battery Charger and LDO Powered by a Solar Cell with Indoor Lighting Supercapacitor Charger and LDO Powered by a Thermopile Generator
3108 TA04
VOUT2_EN L TC3108 VAUX GND 2.2μF150mF 2.5V 1μF 0.047μF 2.2V 2.35V 1:20 330pF220μF VOUT
3108 TA03
T1: COILCRAFT LPR6235-253PML SW VS2 VS1 VSTORE VOUT2 VLDO PGD VLDO VOUT VOUT2_EN L TC3108 VAUX GND 2.2μFLi-Ion 1μF 0.047μF 2.2V 4.1V 1:20 330pF220μF VOUT DC Input Energy Havester and Power Manager
3108 TA05
2.2V COUT PGD VLDO VLDO VSTORE VOUT VOUT VOUT2_EN VOUT2_ENABLE L TC3108 VAUX GND CSTORE 3.3V 1μF VIN VIN > 5V RIN RIN > 100Ω/ V 2.2μF AC Input Energy Havester and Power Manager
3108 TA06
2.2V COUT PGD VLDO VLDO VSTORE VOUT VOUT VOUT2_EN VOUT2_ENABLE L TC3108 VAUX GND CSTORE 1μF CIN VIN VIN > 5VP-P - PIEZO - 60Hz RIN RIN > 100Ω/ V 2.2μF AC
12-Lead Plastic DFN (4mm × 3mm) (Reference L TC DWG # 05-08-1695) 4.00 p0.10 (2 SIDES) 3.00 p0.10 (2 SIDES) NOTE: 1. DRAWING PROPOSED TO BE A VARIATION OF VERSION (WGED) IN JEDEC PACKAGE OUTLINE M0-229 2. DRAWING NOT TO SCALE 3. ALL DIMENSIONS ARE IN MILLIMETERS 4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE 5. EXPOSED PAD SHALL BE SOLDER PLATED 6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION ON THE TOP AND BOTTOM OF PACKAGE 0.40 p 0.10 BOTTOM VIEW—EXPOSED PAD 1.70 p 0.10 0.75 p0.05 R = 0.115 TYP R = 0.05 TYP
2.50 REF
R = 0.20 OR 0.35 s 45o CHAMFER PIN 1 TOP MARK (NOTE 6)
0.200 REF
0.00 – 0.05 (UE12/DE12) DFN 0806 REV D RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS APPLY SOLDER MASK TO AREAS THAT ARE NOT SOLDERED 2.20 p0.05 0.70 p0.05 3.60 p0.05 PACKAGE OUTLINE 3.30 p0.10 0.25 p 0.05
0.50 BSC
1.70 p 0.05 3.30 p0.05 0.25 p 0.05 PACKAGE DESCRIPTION
Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However , no responsibility is assumed for its use. Linear Technology Corporation makes no representa- tion that the interconnection of its circuits as described herein will not infringe on existing patent rights. PACKAGE DESCRIPTION 16-Lead Plastic SSOP (Narrow .150 Inch) (Reference L TC DWG # 05-08-1641) GN16 (SSOP) 0204 12 3 4 5 6 7 8 .229 – .244 (5.817 – 6.198) .150 – .157** (3.810 – 3.988) 16 15 14 13 .189 – .196* (4.801 – 4.978) 12 11 10 9 .016 – .050 (0.406 – 1.270) .015 ± .004 0° – 8 ° TYP.007 – .0098 (0.178 – 0.249) .0532 – .0688 (1.35 – 1.75) .008 – .012 (0.203 – 0.305) TYP .004 – .0098 (0.102 – 0.249) .0250 (0.635) BSC .009 (0.229) REF .254 MIN RECOMMENDED SOLDER PAD LAYOUT .150 – .165 .0250 BSC.0165 ± .0015 .045 ±.005 *DIMENSION DOES NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.006" (0.152mm) PER SIDE **DIMENSION DOES NOT INCLUDE INTERLEAD FLASH. INTERLEAD FLASH SHALL NOT EXCEED 0.010" (0.254mm) PER SIDE INCHES (MILLIMETERS) NOTE: 1. CONTROLLING DIMENSION: INCHES 2. DIMENSIONS ARE IN 3. DRAWING NOT TO SCALE
Linear Technology Corporation 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 ● FAX: (408) 434-0507 ● www.linear .com © LINEAR TECHNOLOGY CORPORATION 2009 LT 1109 • PRINTED IN USA RELATED PARTS TYPICAL APPLICATION PART NUMBER DESCRIPTION COMMENTS L TC1041 Bang-Bang Controller V IN: 2.8V to 16V; VOUT(MIN) = Adj; IQ = 1.2mA; ISD < 1μA; SO-8 Package L TC1389 Nanopower Precision Shunt Voltage Reference V OUT(MIN) = 1.25V; IQ = 0.8μA; SO-8 Package L T1672/L T1673/ L T1674 Single-/Dual-/Quad-Precision 2μA Rail-to-Rail Op Amps SO-8, SO-14 and MSOP-8 Packages 5V to Fixed; IQ = 3μA; ISD < 1μA; 2mm × 2mm DFN-8 and SC70 Packages L TC3525L-3/ L TC3525L-3.3/ L TC3525L-5 400mA (I SW), Synchronous Step-Up DC/DC Converter with Output Disconnect VIN: 0.7V to 4V; VOUT(MIN) = 5VMAX; IQ = 7μA; ISD < 1μA; SC70 Package L TC3588 Piezoelectric Energy Generator with Integrated High Effi ciency Buck Converter 3mm × 3mm DFN-10 and MSOP-10E Packages L TC3631 45V , 100mA Synchronous MicroPower Buck Converter V IN: 4.5V to 45V , 60VMAX; VOUT(MIN): 0.8V to Adj, 3.3V Fixed, 5V Fixed; IQ = 12μA; ISD < 1μA; 3mm × 3mm DFN-8 and MSOP-8E Packages L TC3632 45V , 20mA Synchronous MicroPower Buck Converter V IN: 4.5V to 45V , 60VMAX; VOUT(MIN): 0.8V to Adj, 3.3V Fixed, 5V Fixed; IQ = 12μA; ISD < 1μA; 3mm × 3mm DFN-8 and MSOP-8E Packages L TC3642 45V , 50mA Synchronous MicroPower Buck Converter V IN: 4.5V to 45V , 60VMAX; VOUT(MIN): 0.8V to Adj, 3.3V Fixed, 5V Fixed; IQ = 12μA; ISD < 1μA; 3mm × 3mm DFN-8 and MSOP-8E Packages L T8410/ L T8410-1 MicroPower 25mA/8mA Low Noise Boost Converter with Integrated Schottky Diode and Output Disconnect VIN: 2.6V to 16V; VOUT(MIN) = 40VMAX; IQ = 8.5μA; ISD < 1μA; 2mm × 2mm DFN-8 Package TEG
3108 TA07
VOUT2_EN L TC3108 VAUX GND 2.2μF CSTORE VAUX 1μF 1nF 2.2V 3.3V 1:100 LPR6235-752SML 330pF ONOFF TEC SW VS2 VS1 VSTORE VOUT2 PGD VLDO VOUT VOUT2_EN L TC3108 VAUX GND 1nF 1:100 LPR6235-752SML 330pF COLD HOT TEG Dual TEG Energy Harvester Operates from Temperature Differentials of Either Polarity