LT5570IDD-PBF Datasheet | DigiCamel IC Datasheet

Manufacturer Specifications

Compare LT5570IDD-PBF variants.

Select a manufacturer to view its specifications, local PDF, and searchable HTML text.

1 manufacturers / 1 documents

Manufacturer	Series	Package	Documents	Available	Select specification
Linear Technology	-	-	1	PDF HTML	Viewing

Online Datasheet

Read the Linear Technology document online.

LT5570 LINER

Document overview

Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
PDF pages: 16

Technical content

FEATURES

APPLICATIONS

DESCRIPTION

Fast Responding, 40MHz to 2.7GHz Mean-Squared Power Detector The L T®5570 is a 40MHz to 2.7GHz monolithic Logarithmic Mean-Squared RF power detector . It is capable of RMS measurement of an AC signal with wide dynamic range, from –52dBm to 13dBm depending on frequency. The power of the AC signal in an equivalent decibel-scaled value is precisely converted into DC voltage on a linear scale, independent of the crest factor of the waveforms. The L T5570 is suitable for precision RF power measurement and level control for a wide variety of RF standards, including CDMA, W-CDMA, CDMA2000, TD-SCDMA and WiMAX. The DC output is buffered with a low output impedance ampliﬁ er capable of driving a high capacitance load. 40MHz to 2.7GHz Mean-Squared Power Detector n Frequency Range: 40MHz to 2.7GHz n Accurate RMS Power Measurement of High Crest Factor Modulated Waveforms n Linear DC Output vs Input Power in dBm n Linear Dynamic Range: Up to 60dB n Exceptional Accuracy over Temperature: ±0.3dB n Fast Response Time: 0.5μs Rise Time, 8μs Fall Time n Low Supply Current: 26.5mA n Low Impedance Output Buffer Capable of Driving High Capacitance Load n Small 3mm × 3mm 10-Lead DFN Package n RMS Power Measurement n RF Power Control n Receive and T ransmit Gain Control n W-CDMA, CDMA2000, TD-SCDMA, WiMAX n RF Instrumentation Output Voltage, Linearity Error vs Input Power , 25°C (2140 MHz) VCC IN+ IN– GND FLTR EN DNC OUT DNCDECNC RF INPUT 22nF ENABLE VOUT 1MF 1:4

5570 TA01a

, LT, LTC and LTM are registered trademarks of Linear Technology Corporation. All other trademarks are the property of their respective owners. Protected by U.S. Patents including 7262661, 7259620, 7268608. RF INPUT POWER (dBm) –45 VOUT (V) LINEARITY ERROR (dB) 1.6 2.0 2.4 –25 –5

5570 TA01b

1.2 0.8 –35 –15 5 15 0.4 CW 4CH WCDMA 3CH CDMA2000

PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS T CAUTION: This part is sensitive to electrostatic discharge. It is very important that proper ESD precautions be observed when handling the L T5570. (Note 1) TOP VIEW DD PACKAGE 10-LEAD (3mm s 3mm) PLASTIC DFN

1 FLTR

IN– GND TJMAX = 125°C, θJA = 43°C/W EXPOSED PAD (PIN 11) IS GND, MUST BE SOLDERED TO PCB PARAMETER CONDITIONS MIN TYP MAX UNITS AC Input Input Frequency Range (Note 4) l 40 to 2700 MHz Input Impedance 200/1 Ω/pF fRF = 500MHz RF Input Power Range CW Input; 1:4 Balun Matched into 50Ω Source –52 to 13 dBm Linear Dynamic Range (Note 5) ±1dB Linearity Error , T A = –40°C to 85°C 62 dB Output Slope 36.9 mV/dB Logarithmic Intercept –54.8 dBm Output Variation vs Temperature Normalized to Output at 25°C –40°C < TA < 85°C; PIN = –50dBm to 13dBm ±0.5 dB Deviation from CW Response 11dB Peak to Average Ratio (3-Carrier CDMA2K) 12dB Peak to Average Ratio (4-Carrier WCDMA) 0.4 0.3 dB dB nd Order Harmonic Distortion At RF Input; CW Input; P IN = 10dBm 61 dBc 3rd Order Harmonic Distortion At RF Input; CW Input; P IN = 10dBm 66 dBc The l denotes the speciﬁ cations which apply over the full operating temperature range, otherwise speciﬁ cations are at TA = 25°C, VCC = 5V , EN = 5V , unless otherwise noted. Test circuits are shown in Figures 1 and 3. (Notes 2 and 3). ORDER INFORMATION LEAD FREE FINISH TAPE AND REEL PART MARKING PACKAGE DESCRIPTION TEMPERATURE RANGE L T5570IDD#PBF L T5570IDD#TRPBF LCJQ 10-Lead (3mm × 3mm) Plastic DFN –40°C to 85°C Consult L TC Marketing for parts speciﬁ ed with wider operating temperature ranges. Consult L TC Marketing for information on non-standard lead based ﬁ nish parts. For more information on lead free part marking, go to: http://www.linear .com/leadfree/ For more information on tape and reel speciﬁ cations, go to: http://www.linear .com/tapeandreel/

ELECTRICAL CHARACTERISTICS

PARAMETER CONDITIONS MIN TYP MAX UNITS fRF = 880MHz RF Input Power Range CW Input; 1:4 Balun Matched into 50Ω Source –48 to 13 dBm Linear Dynamic Range (Note 5) ±1dB Linearity Error , T A = –40°C to 85°C 61 dB Output Slope 37.7 mV/dB Logarithmic Intercept –51.9 dBm Output Variation vs Temperature Normalized to Output at 25°C –40°C < TA < 85°C; PIN = –47dBm to 13dBm ±0.4 dB Deviation from CW Response 11dB Peak to Average Ratio (3-Carrier CDMA2K) 12dB Peak to Average Ratio (4-Carrier WCDMA) 0.3 0.2 dB 2nd Order Harmonic Distortion At RF Input; CW Input; P IN = 10dBm 60 dBc 3rd Order Harmonic Distortion At RF Input; CW Input; P IN = 10dBm 61 dBc fRF = 2140MHz RF Input Power Range CW Input; 1:4 Balun Matched into 50Ω Source –38 to 13 dBm Linear Dynamic Range (Note 5) ±1dB Linearity Error , T A = –40°C to 85°C 47 51 dB Output Slope 34.8 36.5 39.0 mV/dB Logarithmic Intercept –43.6 –40.6 –37.6 dBm Output Variation vs Temperature Normalized to Output at 25°C –40°C < TA < 85°C; PIN = –36dBm to 13dBm ±0.3 dB Deviation from CW Response 11dB Peak to Average Ratio (3-Carrier CDMA2K) 12dB Peak to Average Ratio (4-Carrier WCDMA) 0.1 0.2 dB dB fRF = 2700MHz RF Input Power Range CW Input; 1:4 Balun Matched into 50Ω Source –35 to 13 dBm Linear Dynamic Range (Note 5) ±1dB Linearity Error , T A = –40°C to 85°C 48 dB Output Slope 36.4 mV/dB Logarithmic Intercept –38.5 dBm Output Variation vs Temperature Normalized to Output at 25°C –40°C < TA < 85°C; PIN = –31dBm to 13dBm ±0.2 dB Deviation from CW Response 11dB Peak to Average Ratio (3-Carrier CDMA2K) 12dB Peak to Average Ratio (4-Carrier WCDMA) 0.1 0.5 dB Output Output DC Voltage No RF Signal Present 0.1 V Output Impedance 100 Ω Sourcing/Sinking 5/2.5 mA Rise Time 0.2V to 1.6V , 10% to 90%, C1 = 22nF , f RF = 2140MHz 0.5 μS Fall Time 1.6V to 0.2V , 90% to 10%, C1 = 22nF , f RF = 2140MHz 8 μS The l denotes the speciﬁ cations which apply over the full operating temperature range, otherwise speciﬁ cations are at TA = 25°C, VCC = 5V , EN = 5V , unless otherwise noted. Test circuits are shown in Figures 1 and 3. (Notes 2 and 3).

PARAMETER CONDITIONS MIN TYP MAX UNITS Enable (EN) Low = Off, High = On EN Input High Voltage (On) l 2V EN Input Low Voltage (Off) l 1V Enable Pin Input Current EN = 5V l 68 μA Turn ON Time V OUT within 10% of Final Value, C1 = 22nF 1 μs Turn OFF Time V OUT < 0.1V , C1 = 22nF 5 μs Power Supply Supply Voltage l 4.75 5 5.25 V Supply Current 26.5 32.5 mA Shutdown Current EN = 0V , V CC = 5V 0.1 100 μA Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: Speciﬁ cations over the –40ºC to +85ºC temperature range are assured by design, characterization and correlation with statistical process controls. Note 3: A 1:4 input transformer is used for the input matching to 50Ω source. Note 4: Operation over a wider frequency range is possible with reduced performance. Consult the factory for information and assistance. Note 5: The linearity error is calculated by the difference between the incremental slope of the output and the average output slope from –30dBm to 2dBm. The dynamic range is deﬁ ned as the range over which the linearity error is within ±1dB. ELECTRICAL CHARACTERISTICS The l denotes the speciﬁ cations which apply over the full operating temperature range, otherwise speciﬁ cations are at TA = 25°C, VCC = 5V , EN = 5V , unless otherwise noted. Test circuits are shown in Figures 1 and 3. (Notes 2 and 3).

TYPICAL PERFORMANCE CHARACTERISTICS Output Voltage vs Frequency Linearity Error vs Frequency Output Voltage, Linearity Error vs RF Input Power , 500MHz Linearity Error vs RF Input Power , 500MHz Modulated Waveforms Output Voltage, Linearity Error vs RF Input Power , 880MHz Linearity Error vs RF Input Power , 880MHz Modulated Waveforms (Test Circuits Shown in Figures 1 and 3) RF INPUT POWER (dBm) –55 VOUT (V) 1.6 2.0 2.4 –25 –5

5570 G01

1.2 0.8 –45 –35 –15 5 15 0.4 500MHz 880MHz 2140MHz 2700MHz TA = 25°C RF INPUT POWER (dBm) –55 LINEARITY ERROR (dB) –25 –5

5570 G02

–45 –35 –15 5 15 TA = 25°C 500MHz 880MHz 2140MHz 2700MHz RF INPUT POWER (dBm) –55 VOUT (V) LINEARITY ERROR (dB) 1.6 2.0 2.4 –25 –5

5570 G03

1.2 0.8 –45 –35 –15 5 15 0.4 TA = –40°C TA = 25°C TA = 85°C RF INPUT POWER (dBm) –55 LINEARITY ERROR (dB) –25 –5

5570 G04

–45 –35 –15 5 15 CW 4CH WCDMA 3CH CDMA2000 TA = 25°C RF INPUT POWER (dBm) –55 VOUT (V) LINEARITY ERROR (dB) 1.6 2.0 2.4 –25 –5

5570 G05

1.2 0.8 –45 –35 –15 5 15 0.4 TA = –40°C TA = 25°C TA = 85°C RF INPUT POWER (dBm) –55 LINEARITY ERROR (dB) –25 –5

5570 G06

–45 –35 –15 5 15 CW 4CH WCDMA 3CH CDMA2000 TA = 25°C

TYPICAL PERFORMANCE CHARACTERISTICS Linearity Error vs RF Input Power , 2700MHz Modulated Waveforms Slope vs Frequency Logarithmic Intercept vs Frequency (Test Circuits Shown in Figures 1 and 3) RF INPUT POWER (dBm) –45 LINEARITY ERROR (dB) –25 –5

5570 G10

–35 –15 5 15 CW 4CH WCDMA 3CH CDMA2000 TA = 25°C FREQUENCY (MHz) SLOPE (mV/dB) 500 1000 1500 2000

5570 G11

TA = 25°C FREQUENCY (MHz) –60 LOGARITHMIC INTERCEPT (dBm)–55 –50 –45 –40 –35 500 1000 1500 2000

5570 G12

TA = 25°C Output Voltage, Linearity Error vs RF Input Power , 2140MHz Linearity Error vs RF Input Power , 2140MHz Modulated Waveforms Output Voltage, Linearity Error vs RF Input Power , 2700MHz RF INPUT POWER (dBm) –45 VOUT (V) LINEARITY ERROR (dB) 1.6 2.0 2.4 –25 –5

5570 G07

1.2 0.8 –35 –15 5 15 0.4 TA = –40°C TA = 25°C TA = 85°C RF INPUT POWER (dBm) –45 LINEARITY ERROR (dB) –25 –5

5570 G08

–35 –15 5 15 CW 4CH WCDMA 3CH CDMA2000 TA = 25°C RF INPUT POWER (dBm) –45 VOUT (V) LINEARITY ERROR (dB) 1.6 2.0 2.4 –25 –5

5570 G09

1.2 0.8 –35 –15 5 15 0.4 TA = –40°C TA = 25°C TA = 85°C

Output T ransient Response, C1 = 22nF Output T ransient Response, C1 = 1μF Slope Distribution vs Temperature Logarithmic Intercept Distribution vs Temperature Supply Current vs Supply Voltage Supply Current vs RF Input Power TYPICAL PERFORMANCE CHARACTERISTICS Input Return Loss vs Frequency Reference in Figure 3 Input Return Loss vs Frequency Reference in Figure 1 (Test Circuits Shown in Figures 1 and 3) SUPPLY VOLTAGE (V) 4.50 SUPPLY CURRENT (mA) 4.75 5.00 5.25 5.50

5570 G17

TA = –40°C TA = 25°C TA = 85°C RF INPUT POWER (dBm) –55 SUPPLY CURRENT (mA) –25 –5

5570 G18

–45 –35 –15 5 15 TA = 25°C FREQUENCY (MHz) –30 RETURN LOSS (dB)–20 –10 –25 –15 200 400 600 800

5570 G19

FREQUENCY (MHz) 500 –30 RETURN LOSS (dB) –25 –20 –15 –10 1000 1500 2000 2500

5570 G20

TIME (μs) VOUT (V) RF PULSE ENABLE (V) 1.0 2.0 3.0 0.5 1.5 2.5 10 20 30 40

5570 G13

–18 –10 –14 50501 5 2 5 3 5 4 5 AT 2140MHz PIN = 10dBm PIN = –10dBm PIN = –20dBm PIN = –30dBm PIN = 0dBm RF PULSE OFF RF PULSE OFF RF PULSE ON TIME (μs) VOUT (V) RF PULSE ENABLE (V) 1.0 2.0 3.0 0.5 1.5 2.5 200 400 600 800

5570 G14

–18 –10 –14 10001000 300 500 700 900 AT 2140MHz PIN = 10dBm PIN = –10dBm PIN = –20dBm PIN = –30dBm PIN = 0dBm RF PULSE OFF RF PULSE OFF RF PULSE ON SLOPE (mV/dB) 35.4 PERCENTAGE DISTRIBUTION (%) 37.8 38.4

5570 G15

36 36.6 37.2 39 TA = –40oC TA = 25oC TA = 85oC LOGARITHMIC INTERCEPT (dBm) –44 PERCENTAGE DISTRIBUTION (%) –40 –39 –38

5570 G16

–43 –42 –41 TA = –40oC TA = 25oC TA = 85oC

VCC (Pin 1): Power Supply Pin for the Bias Circuits. Typi- cal current consumption is 26.5mA. This pin should be externally bypassed with 1nF and 1μF chip capacitors. IN +, IN– (Pins 2, 4): Differential Input Signal Pins. These pins are preferably driven with a differential signal for optimum performance. The pins are internally biased to V CC – 1.224V and should be DC blocked externally. The differential impedance is about 200Ω. DEC (Pin 3): Input Common Mode Decoupling Pin. This pin is internally biased to VCC – 1.224V . The input imped- ance is about 1.75KΩ in parallel with a 10pF internal shunt capacitor to ground. The impedance between DEC and IN + (or IN–) is about 100Ω. The pin can be connected to the center tap of an external balun. An ac-decoupling capacitor may be connected to ground to maintain the IC performance if necessary. GND (Pin 5, Exposed Pad): Circuit Ground Return for the Entire IC. This must be soldered to the printed circuit board ground plane. OUT (Pin 6): DC Output Pin. The output impedance is mainly determined by an internal 100Ω series resistance that provides output circuit protection if the output is shorted to ground. DNC (Pins 7, 8): Do Not Connect. Don’t connect any external component at these pins. Avoid a long wire or metal trace on the PCB. EN (Pin 9): Enable Pin. An applied voltage above 2V will activate the bias for the IC. For an applied voltage below 1V , the circuits will be shut down (disabled) with a corre- sponding reduction in power supply current. If the enable function is not required, then this pin should be con- nected to V CC. Typical enable pin input current is 68μA for EN = 5V . Note that at no time should the Enable pin voltage be allowed to exceed V CC by more than 0.3V . FL TR (Pin 10): Connection for an External Filtering Capaci- tor C1. A minimum 22nF capacitor is required for stable ac average power measurement. This capacitor should be connected between Pin 10 and V CC.

5570 F01 C6

Figure 1. Test Schematic for 880MHz, 2140MHz and 2700MHz Applications Figure 2. Top Side of Evaluation Board for 880MHz, 2140MHz and 2700MHz Applications

Figure 3. Test Schematic for 40MHz to 860MHz Applications Figure 4. Top Side of Evaluation Board for 40MHz to 860MHz Applications

5570 F03 C6

CC – 1.224V . The differential impedance is about 200Ω. Figure 5. Single-Ended Input Conﬁ guration factor signals such as a 4-carrier W-CDMA waveform. as the input RF frequency increases. conversion of a single-ended to balanced signal as well. coupled to ground via a capacitor rather than left ﬂ oating. Table 1. RF Differential Input Impedance

5570 F05

than 12dB from 40MHz to 2.7GHz. Figure 6. Output Voltage and Linearity Error vs Figure 7. Residual Ripple, Output T ransient normalizing them to the output slope (about 37mV/dB). both curves toward a lower frequency.

5570 F06

5570 F07

ﬁ lter at the output as discussed in the next section. Figure 9. This push-pull buffer ampliﬁ er can source 5mA current to the load and sink 2.5mA current from the load. output is shorted to ground. is 8μs, respectively, for full-scale pulsed RF input power . of a slower transient response. Figure 9. Simpliﬁ ed Circuit Schematic of the Output Interface

1007 RSSOUT

3566 F09

Figure 8. Output DC Voltage Variation and

5570 F08

Figure 10. Residual ripple, Output T ransient Figure 11. Enable Pin Simpliﬁ ed Circuit LOAD can be chosen as follows. fall time is slightly increased to 8.8μS.

5570 F11

the upper ESD protection diode connected at the EN pin. If this occurs, damage to the IC may result.

5570 F10

Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However , no responsibility is assumed for its use. Linear Technology Corporation makes no representa- tion that the interconnection of its circuits as described herein will not infringe on existing patent rights. PACKAGE DESCRIPTION 3.00 p0.10 (4 SIDES) NOTE: 1. DRAWING TO BE MADE A JEDEC PACKAGE OUTLINE M0-229 VARIATION OF (WEED-2). CHECK THE LTC WEBSITE DATA SHEET FOR CURRENT STATUS OF VARIATION ASSIGNMENT 2. DRAWING NOT TO SCALE 3. ALL DIMENSIONS ARE IN MILLIMETERS 4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE 5. EXPOSED PAD SHALL BE SOLDER PLATED 6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION ON THE TOP AND BOTTOM OF PACKAGE 0.38 p 0.10 BOTTOM VIEW—EXPOSED PAD 1.65 p 0.10 (2 SIDES) 0.75 p0.05 R = 0.115 TYP 2.38 p0.10 (2 SIDES) 106 PIN 1 TOP MARK (SEE NOTE 6)

0.200 REF

0.00 – 0.05 (DD) DFN 1103 0.25 p 0.05 2.38 p0.05 (2 SIDES) RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS 1.65 p0.05 (2 SIDES)2.15 p0.05 0.50 BSC 0.675 p0.05 3.50 p0.05 PACKAGE OUTLINE 0.25 p 0.05

0.50 BSC

10-Lead Plastic DFN (3mm × 3mm) (Reference L TC DWG # 05-08-1699)

Linear Technology Corporation 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 ● FAX: (408) 434-0507 ● www.linear .com © LINEAR TECHNOLOGY CORPORATION 2007 LT 1107 • PRINTED IN USA RELATED PARTS PART NUMBER DESCRIPTION COMMENTS Infrastructure L T5514 Ultralow Distortion, IF Ampliﬁ er/ADC Driver with Digitally Controlled Gain 850MHz Bandwidth, 47dBm OIP3 at 100MHz, 10.5dB to 33dB Gain Control Range L T5515 1.5GHz to 2.5GHz Direct Conversion Quadrature Demodulator 20dBm IIP3, Integrated LO Quadrature Generator L T5516 0.8GHz to 1.5GHz Direct Conversion Quadrature Demodulator 21.5dBm IIP3, Integrated LO Quadrature Generator L T5517 40MHz to 900MHz Quadrature Demodulator 21dBm IIP3, Integrated LO Quadrature Generator L T5518 1.5GHz to 2.4GHz High Linearity Direct Quadrature Modulator 22.8dBm OIP3 at 2GHz, –158.2dBm/Hz Noise Floor , 50Ω Single-Ended RF and LO Ports, 4-Channel W-CDMA ACPR = –64dBc at 2.14GHz L T5519 0.7GHz to 1.4GHz High Linearity Upconverting Mixer 17.1dBm IIP3 at 1GHz, Integrated RF Output T ransformer with 50Ω Matching, Single-Ended LO and RF Ports Operation L T5520 1.3GHz to 2.3GHz High Linearity Upconverting Mixer 15.9dBm IIP3 at 1.9GHz, Integrated RF Output T ransformer with 50Ω Matching, Single-Ended LO and RF Ports Operation L T5521 10MHz to 3700MHz High Linearity Upconverting Mixer Port Operation L T5522 600MHz to 2.7GHz High Signal Level Downconverting Mixer 4.5V to 5.25V Supply, 25dBm IIP3 at 900MHz, NF = 12.5dB, 50Ω Single-Ended RF and LO Ports L T5524 Low Power , Low Distortion ADC Driver with Digitally Programmable Gain 450MHz Bandwidth, 40dBm OIP3, 4.5dB to 27dB Gain Control L T5525 High Linearity, Low Power Downconverting Mixer Single-Ended 50Ω RF and LO Ports, 17.6dBm IIP3 at 1900MHz, I CC = 28mA L T5526 High Linearity, Low Power Downconverting Mixer 3V to 5.3V Supply, 16.5dBm IIP3, 100kHz to 2GHz RF , NF = 11dB, ICC = 28mA, –65dBm LO-RF Leakage L T5527 400MHz to 3.7GHz High Signal Level Downconverting Mixer IIP3 = 23.5dBm and NF = 12.5dBm at 1900MHz, 4.5V to 5.25V Supply, ICC = 78mA, Conversion Gain = 2dB L T5528 1.5GHz to 2.4GHz High Linearity Direct Quadrature Modulator 21.8dBm OIP3 at 2GHz, –159.3dBm/Hz Noise Floor , 50Ω, 0.5VDC Baseband Interface, 4-Channel W-CDMA ACPR = –66dBc at 2.14GHz L T5557 400MHz to 3.8GHz, 3.3V High Signal Level Downconverting Mixer IIP3 = 23.7dBm at 2600MHz, 23.5dBm at 3600MHz, ICC = 82mA at 3.3V L T5560 Ultra-Low Power Active Mixer 10mA Supply Current, 10dBm IIP3, 10dB NF , Usable as Up- or Down-Converter . L T5568 700MHz to 1050MHz High Linearity Direct Quadrature Modulator 22.9dBm OIP3 at 850MHz, –160.3dBm/Hz Noise Floor , 50Ω, 0.5VDC Baseband Interface, 3-Ch CDMA2000 ACPR = –71.4dBc at 850MHz L T5572 1.5GHz to 2.5GHz High Linearity Direct Quadrature Modulator 21.6dBm OIP3 at 2GHz, –158.6dBm/Hz Noise Floor , High-Ohmic 0.5VDC Baseband Interface, 4-Ch W-CDMA ACPR = –67.7dBc at 2.14GHz L T5575 800MHz to 2.7GHz High Linearity Direct Conversion I/Q Demodulator 50Ω, Single-Ended RF and LO Inputs. 28dBm IIP3 at 900MHz, 13.2dBm P1dB, 0.04dB I/Q Gain Mismatch, 0.4° I/Q Phase Mismatch RF Power Detectors LT C ®5505 RF Power Detectors with >40dB Dynamic Range 300 MHz to 3GHz, Temperature Compensated, 2.7V to 6V Supply L TC5507 100kHz to 1000MHz RF Power Detector 100kHz to 1GHz, Temperature Compensated, 2.7V to 6V Supply L TC5508 300MHz to 7GHz RF Power Detector 44dB Dynamic Range, Temperature Compensated, SC70 Package L TC5509 300MHz to 3GHz RF Power Detector 36dB Dynamic Range, Low Power Consumption, SC70 Package L TC5530 300MHz to 7GHz Precision RF Power Detector Precision V OUT Offset Control, Shutdown, Adjustable Gain L TC5531 300MHz to 7GHz Precision RF Power Detector Precision V OUT Offset Control, Shutdown, Adjustable Offset L TC5532 300MHz to 7GHz Precision RF Power Detector Precision V OUT Offset Control, Adjustable Gain and Offset L T5534 50MHz to 3GHz Log RF Power Detector with 60dB Dynamic Range ±1dB Output Variation over Temperature, 38ns Response Time, Log Linear Response L TC5536 Precision 600MHz to 7GHz RF Power Detector with Fast Comparator Output 25ns Response Time, Comparator Reference Input, Latch Enable Input, –26dBm to +12dBm Input Range L T5537 Wide Dynamic Range Log RF/IF Detector Low Frequency to 1GHz, 83dB Log Linear Dynamic Range

Selected Specification

Linear Technology LT5570IDD-PBF overview.

Summary

Fast Responding, 40MHz to 2.7GHz Mean-Squared Power Detector

Description

Fast Responding, 40MHz to 2.7GHz Mean-Squared Power Detector

Source title LT5570IDD-PBF Datasheet(PDF) - Linear Technology

Related Parts

More parts from the same family.

Browse manufacturer