LT5560EDD

Linear Technology

0.01MHz to 4GHz Low Power Active Mixer

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LT5560 LINER

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Technical content

0.01MHz to 4GHz Low Power Active Mixer The LT®5560 is a low power, high performance broad- band active mixer. This double-balanced mixer can be driven by a single-ended LO source and requires only –2dBm of LO power. The balanced design results in low LO leakage to the output, while the integrated input ampliﬁ er provides excellent LO to IN isolation. The sig- nal ports can be impedance matched to a broad range of frequencies, which allows the LT5560 to be used as an up- or down-conversion mixer in a wide variety of applications. The LT5560 is characterized with a supply current of 10mA; however, the DC current is adjustable, which allows the performance to be optimized for each application with a single resistor. For example, when biased at its maximum supply current (13.4mA), the typical upconverting mixer IIP3 is +10.8dBm for a 900MHz output. ■ Portable Wireless ■ CATV/DBS Receivers ■ WiMAX Radios ■ PHS Basestations ■ RF Instrumentation ■ Microwave Data Links ■ VHF/UHF 2-Way Radios ■ Up or Downconverting Applications ■ Noise Figure: 9.3dB Typical at 900MHz Output ■ Conversion Gain: 2.4dB Typical ■ IIP3: 9dBm Typical at ICC = 10mA ■ Adjustable Supply Current: 4mA to 13.4mA ■ Low LO Drive Level: –2dBm ■ Single-Ended or Differential LO ■ High Port-to-Port Isolation ■ Enable Control with Low Off-State Leakage Current ■ Single 2.7V to 5V Supply ■ Small 3mm × 3mm DFN Package Low Cost 900MHz Downconverting Mixer APPLICATIO SU FEATURES DESCRIPTIO U TYPICAL APPLICATIO U , LT, LTC and LTM are registered trademarks of Linear Technology Corporation. All other trademarks are the property of their respective owners. IFOUT and IM3 Levels vs RF Input Power IN+ IN– LO– ENEN OUT+ OUT– LO+ LT5560 PGND RFIN 900MHz LOIN 760MHz IFOUT 140MHz VCC 15nH 100pF 100pF 4.7pF6.8nH 270nH

5560 TA01

6.8nH 270nH 1nF 1µF 2.7V TO 5.3V 33pF4.7pF 100pF 4.7pF 4.7pF RF INPUT POWER (dBm) –80 POWER LEVEL (dBm/Tone)–60 –20 –70 –40 –30 –50 –10 –16 –12 –8 –4

5560 TA02

TA = 25°C VCC = 3V ICC = 13.3mA fLO = 760MHz fIF = 140MHz

DC ELECTRICAL CHARACTERISTICS IN (Note 1) V CC = 3V, EN = 3V, TA = 25°C, unless otherwise noted. Test circuit shown in Figure 1. (Note 3) PARAMETER CONDITIONS MIN TYP MAX UNITS Power Supply Requirements (VCC) Supply Voltage 2.7 3 5.3 V Supply Current V CC = 3V, R1 = 3Ω 10 12 mA Shutdown Current EN = 0.3V, V CC = 3V 0.1 10 µA Enable (EN) Low = Off, High = On EN Input High Voltage (On) 2V EN Input Low Voltage (Off) 0.3 V Enable Pin Input Current EN = 3V EN = 0.3V 0.1 µA µA Turn On Time 2µ s Turn Off Time 5µ s ABSOLUTE AXI U RATI GSW WW U PACKAGE/ORDER I FOR ATIOUU W TOP VIEW DD PACKAGE 8-LEAD (3mm × 3mm) PLASTIC DFN 1LO EN IN+ IN– LO+ VCC OUT+ OUT– TJMAX = 125°C, θJA = 43°C/W EXPOSED PAD (PIN 9) IS GND MUST BE SOLDERED TO PCB ORDER PART NUMBER DD PART MARKING LT5560EDD LCBX Order Options Tape and Reel: Add #TR Lead Free: Add #PBF Lead Free Tape and Reel: Add #TRPBF Lead Free Part Marking: http://www.linear.com/leadfree/ Consult LTC Marketing for parts speciﬁ ed with wider operating temperature ranges. AC ELECTRICAL CHARACTERISTICS PARAMETER CONDITIONS MIN TYP MAX UNITS Signal Input Frequency Range (Note 4) Requires External Matching < 4000 MHz LO Input Frequency Range (Note 4) Requires External Matching < 4000 MHz Signal Output Frequency Range (Note 4) Requires External Matching < 4000 MHz (Notes 2 and 3)

AC ELECTRICAL CHARACTERISTICS V CC = 3V, EN = 3V, TA = 25°C, PIN = –20dBm (–20dBm/tone for 2-tone IIP3 tests, Δf = 1MHz), PLO = –2dBm, unless otherwise noted. Test circuits are shown in Figures 1, 2 and 3. (Notes 2 and 3) PARAMETER CONDITIONS MIN TYP MAX UNITS Signal Input Return Loss Z = 50Ω, External Match 15 dB LO Input Return Loss Z = 50Ω, External Match 15 dB Signal Output Return Loss Z = 50Ω, External Match 15 dB LO Input Power –6 to 1 dBm PARAMETER CONDITIONS MIN TYP MAX UNITS Conversion Gain f IN = 70MHz, fOUT = 450MHz fIN = 140MHz, fOUT = 900MHz fIN = 140MHz, fOUT = 1900MHz 2.7 2.4 1.2 dB dB dB Conversion Gain vs Temperature T A = –40°C to 85°C, fOUT = 900MHz – 0.015 dB/°C Input 3rd Order Intercept f IN = 70MHz, fOUT = 450MHz fIN = 140MHz, fOUT = 900MHz fIN = 140MHz, fOUT = 1900MHz 9.6 9.0 8.0 dBm dBm dBm Input 2nd Order Intercept f IN = 70MHz, fOUT = 450MHz fIN = 140MHz, fOUT = 900MHz fIN = 140MHz, fOUT = 1900MHz dBm dBm dBm Single Sideband Noise Figure f IN = 70MHz, fOUT = 450MHz fIN = 140MHz, fOUT = 900MHz fIN = 140MHz, fOUT = 1900MHz 8.8 9.3 10.3 dB dB dB IN to LO Isolation (with LO Applied) f IN = 70MHz, fOUT = 450MHz fIN = 140MHz, fOUT = 900MHz fIN = 140MHz, fOUT = 1900MHz dB dB dB LO to IN Leakage f IN = 70MHz, fOUT = 450MHz fIN = 140MHz, fOUT = 900MHz fIN = 140MHz, fOUT = 1900MHz –63 –54 –36 dBm dBm dBm LO to OUT Leakage f IN = 70MHz, fOUT = 450MHz fIN = 140MHz, fOUT = 900MHz fIN = 140MHz, fOUT = 1900MHz –44 –41 –36 dBm dBm dBm Input 1dB Compression Point f IN = 70MHz, fOUT = 450MHz fIN = 140MHz, fOUT = 900MHz fIN = 140MHz, fOUT = 1900MHz 0.4 –2.8 –0.8 dBm dBm dBm Upconverting Mixer Conﬁ guration: VCC = 3V, EN = 3V, TA = 25°C, PIN = –20dBm (–20dBm/tone for 2-tone IIP3 tests, Δf = 1MHz), PLO = –2dBm, unless otherwise noted. High side LO for 450MHz tests, low side LO for 900MHz and 1900MHz tests. Test circuits are shown in Figures 1 and 3. (Notes 2, 3 and 5) PARAMETER CONDITIONS MIN TYP MAX UNITS Conversion Gain f IN = 450MHz, fOUT = 70MHz fIN = 900MHz, fOUT = 140MHz fIN = 1900MHz, fOUT = 140MHz 2.7 2.6 2.3 dB dB dB Conversion Gain vs Temperature T A = – 40°C to 85°C, fIN = 900MHz – 0.015 dB/°C Input 3rd Order Intercept f IN = 450MHz, fOUT = 70MHz fIN = 900MHz, fOUT = 140MHz fIN = 1900MHz, fOUT = 140MHz 10.1 9.7 5.6 dBm dBm dBm Single Sideband Noise Figure f IN = 450MHz, fOUT = 70MHz fIN = 900MHz, fOUT = 140MHz fIN = 1900MHz, fOUT = 140MHz 10.5 10.1 10.8 dB dB dB Downconverting Mixer Conﬁ guration: VCC = 3V, EN = 3V, TA = 25°C, PIN = –20dBm (–20dBm/tone for 2-tone IIP3 tests, Δf = 1MHz), PLO = –2dBm, unless otherwise noted. High side LO for 450MHz tests, low side LO for 900MHz and 1900MHz tests. Test circuits are shown in Figures 2 and 3. (Notes 2, 3 and 5)

VOLTAGE (V) 2.5 CURRENT (mA) 3 3.5 4 4.5

5560 G01

5 5.5 25°C 85°C –40 °C VOLTAGE (V) 2.5 0.0 CURRENT (µA) 0.2 0.4 0.8 1.0 3 3.5 4 4.5

5560 G02

0.6 5 5.5 25°C 85°C –40 °C AC ELECTRICAL CHARACTERISTICS Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: Each set of frequency conditions requires an appropriate test board. Note 3: Speciﬁ cations over the –40°C to +85°C temperature range are assured by design, characterization and correlation with statistical process controls. Supply Current vs Supply Voltage Shutdown Current vs Supply Voltage TYPICAL DC PERFOR A CE CHARACTERISTICSUW (Test Circuit Shown in Figure 1) PARAMETER CONDITIONS MIN TYP MAX UNITS IN to LO Isolation (with LO Applied) f IN = 450MHz, fOUT = 70MHz fIN = 900MHz, fOUT = 140MHz fIN = 1900MHz, fOUT = 140MHz dB dB dB LO to IN Leakage f IN = 450MHz, fOUT = 70MHz fIN = 900MHz, fOUT = 140MHz fIN = 1900MHz, fOUT = 140MHz –52 –57 –37 dBm dBm dBm LO to OUT Leakage f IN = 450MHz, fOUT = 70MHz fIN = 900MHz, fOUT = 140MHz fIN = 1900MHz, fOUT = 140MHz –47 –63 –24 dBm dBm dBm 2RF – 2LO Output Spurious (Half IF) Product (f IN = fLO + fOUT/2) 450MHz: fIN = 485MHz, fOUT = 70MHz 900MHz: fIN = 830MHz, fOUT = 140MHz 1900MHz: fIN = 1830MHz, fOUT = 140MHz –68 –69 –47 dBc dBc dBc 3RF – 3LO Output Spurious (1/3 IF) Product (f IN = fLO + fOUT/3) 450MHz: fIN = 496.7MHz, fOUT = 69.9MHz 900MHz: fIN = 806.7MHz, fOUT = 140.1MHz 1900MHz: fIN = 1806.7MHz, fOUT = 140.1MHz –79 –76 –62 dBc dBc dBc Input 1dB Compression Point f IN = 450MHz, fOUT = 70MHz fIN = 900MHz, fOUT = 140MHz fIN = 1900MHz, fOUT = 140MHz –0.8 –2.2 dBm dBm dBm Note 4: Operation over a wider frequency range is possible with reduced performance. Consult the factory for information and assistance. Note 5: SSB Noise Figure measurements are performed with a small- signal noise source and bandpass ﬁ lter on the RF input (downmixer) or output (upmixer), and no other RF input signal applied. Downconverting Mixer Conﬁ guration: V CC = 3V, EN = 3V, TA = 25°C, PIN = –20dBm (–20dBm/tone for 2-tone IIP3 tests, Δf = 1MHz), PLO = –2dBm, unless otherwise noted. High side LO for 450MHz tests, low side LO for 900MHz and 1900MHz tests. Test circuits are shown in Figures 2 and 3. (Notes 2, 3 and 5)

GAIN (dB) DISTRIBUTION (%)

5560 G09

–45 °C +25°C +90°C IIP3 (dBm) DISTRIBUTION (%)

5560 G10

9.0 10.2 –45 °C +25°C +90°C SSB NOISE FIGURE (dB) DISTRIBUTION (%)

5560 G11

–45 °C +25°C +90°C RF OUTPUT FREQUENCY (MHz) GAIN (dB), IIP3 (dBm)

5560 G03

25°C 85°C –40 °C SSB NF IIP3 GAIN NOISE FIGURE (dB) LO INPUT POWER (dBm) –10 –8 –6 –4 –2

5560 G04

8GAIN (dB), IIP3 (dBm) 25°C 85°C –40 °C IIP3 GAIN NOISE FIGURE (dB)

5560 G05

LO INPUT POWER (dBm) 25°C 85°C –40 °C LO FREQUENCY (MHz) 700 LEAKAGE (dBm) –30 –20 –10 820

5560 G06

–40 –50 740 780720 840 760 800 860 –60 –70 LO-OUT LO-IN VOLTAGE (V) 2.5 3.5 4.5 5

5560 G07

3 4 5.5 GAIN (dB), IIP3 (dBm) 25°C 85°C –40 °C IIP3 GAIN IF INPUT POWER (dBm) –20 OUTPUT POWER (dBm/Tone) –60 –40

5560 G08

–80 –100 –15 –10 –5 –20 25°C 85°C –40 °C IM3 RFOUT IM2 Conversion Gain, IIP3 and SSB NF vs RF Output Frequency Conversion Gain and IIP3 vs LO Input Power SSB Noise Figure vs LO Input Power LO-IN and LO-OUT Leakage vs LO Frequency Conversion Gain and IIP3 vs Supply Voltage RF OUT, IM3 and IM2 vs IF Input Power (Two Input Tones) TYPICAL AC PERFOR A CE CHARACTERISTICSUW 900MHz Upconverting Mixer Application: V CC = 3V, ICC = 10mA, EN = 3V, TA = 25°C, fIN = 140MHz, PIN = –20dBm (–20dBm/tone for 2-tone IIP3 tests, Δf = 1MHz), fLO = 760MHz, PLO = –2dBm, output measured at 900MHz, unless otherwise noted. (Test circuit shown in Figure 1) Gain Distribution at 900MHz IIP3 Distribution at 900MHz SSB Noise Figure Distribution at 900MHz

RF OUTPUT FREQUENCY (MHz) GAIN (dB), IIP3 (dBm)

5560 G12

25°C 85°C –40 °C IIP3 GAIN RF OUTPUT FREQUENCY (MHz) NOISE FIGURE (dB)

5560 G13

25°C 85°C –40 °C –90 –80 –60 –50 –40

5560 G14

–70 –30 –20 –10 IF INPUT POWER (dBm) –20 OUTPUT POWER (dBm/Tone) 0–15 –10 –5 25°C 85°C –40 °C IM3 RFOUT IM2 LO INPUT POWER (dBm) –10 –8 –6 –4 –2

5560 G15

GAIN (dB), IIP3 (dBm) 25°C 85°C –40 °C IIP3 GAIN LO INPUT POWER (dBm) –10 NOISE FIGURE (dB) –6 –2 0

5560 G16

–8 –4 2 25°C 85°C –40 °C LO FREQUENCY (MHz) 350 –70 –60 –50 –40 –30 –20 400 450 500 550

5560 G17

–10LEAKAGE (dBm) LO-OUT LO-IN RF OUTPUT FREQUENCY (MHz) 1800 GAIN (dB), IIP3 (dBm) 1950 5560 018 1850 1900 2000 25°C 85°C –40 °C IIP3 GAIN RF OUTPUT FREQUENCY (MHz) NOISE FIGURE (dB)

5560 G19

25°C 85°C –40 °C IF INPUT POWER (dBm) –20 OUTPUT POWER (dBm/Tone) –40 –30 –20

5560 G20

–50 –60 –80 –15 –10 –5 –70 –10 25°C 85°C –40 °C IM3 RFOUT IM2 TYPICAL AC PERFOR A CE CHARACTERISTICSUW 450MHz Upconverting Mixer Application: VCC = 3V, ICC = 10mA, EN = 3V, TA = 25°C, fIN = 70MHz, PIN = –20dBm (–20dBm/tone for 2-tone IIP3 tests, Δf = 1MHz), fLO = 520MHz, PLO = –2dBm, output measured at 450MHz, unless otherwise noted. (Test circuit shown in Figure 3) Conversion Gain and IIP3 vs RF Output Frequency SSB Noise Figure vs RF Output Frequency RF OUT, IM3 and IM2 vs IF Input Power (Two Input Tones) Conversion Gain and IIP3 vs LO Input Power SSB Noise Figure vs LO Input Power LO-IN and LO-OUT Leakage vs LO Frequency Conversion Gain and IIP3 vs RF Output Frequency SSB Noise Figure vs RF Output Frequency RF OUT, IM3 and IM2 vs IF Input Power (Two Input Tones) 1900MHz Upconverting Mixer Application: VCC = 3V, ICC = 10mA, EN = 3V, TA = 25°C, fIN = 140MHz, PIN = –20dBm (–20dBm/tone for 2-tone IIP3 tests, Δf = 1MHz), fLO = 1760MHz, PLO = –2dBm, output measured at 1900MHz, unless otherwise noted. (Test circuit shown in Figure 1)

LO INPUT POWER (dBm) –10 –4 0

5560 G21

–8 –6 –2 2 GAIN (dB), IIP3 (dBm) 25°C 85°C –40 °C IIP3 GAIN LO INPUT POWER (dBm) –10 –8 –6 –4 –2

5560 G22

NOISE FIGURE (dB) 25°C 85°C –40 °C LO FREQUENCY (MHz) 1660 LEAKAGE (dBm) –30 –20 1860

5560 G23

–40 –50 1710 1760 1810 –10 LO-OUT LO-IN RF INPUT FREQUENCY (MHz) 700 800 900 1000 1100

5560 G24

GAIN (dB), IIP3 (dBm) NOISE FIGURE (dB) 25°C 85°C –40 °C IIP3 GAIN SSB NF LO INPUT POWER (dBm) –10 –4 0

5560 G25

–8 –6 –2 2 GAIN (dB), IIP3 (dBm) 25°C 85°C –40 °C IIP3 GAIN LO INPUT POWER (dBm) –10 NOISE FIGURE (dB) –8 –6 –4 –2

5560 G26

25°C 85°C –40 °C LO FREQUENCY (MHz) 500 LEAKAGE (dBm)–50 –40 –30 800 1000

5560 G27

–60 –70 –80 600 700 900 –20 –10 1100 LO-IN LO-OUT RF INPUT POWER (dBm) OUTPUT POWER (dBm)

5560 G28

–20 –15 –5 –10 0 –100 –80 –60 –40 –20 –90 –70 –50 –30 –10 TA = 25°C fLO = 760MHz fIF = 140MHz 3RF – 3LO fRF = 806.7MHz IFOUT fRF = 900MHz 2RF – 2LO fRF = 830MHz LO INPUT POWER (dBm)

5560 G29

–110 –100 –90 –80 –70 –50 –60OUTPUT POWER (dBm) TA = 25°C fLO = 760MHz fIF = 140MHz 3RF – 3LO fRF = 806.7MHz 2RF – 2LO fRF = 830MHz Conversion Gain and IIP3 vs LO Input Power SSB Noise Figure vs LO Input Power LO-IN and LO-OUT Leakage vs LO Frequency Conversion Gain, IIP3 and SSB NF vs RF Input Frequency Conversion Gain and IIP3 vs LO Input Power SSB Noise Figure vs LO Input Power LO-IN and LO-OUT Leakage vs LO Frequency IF OUT, 2 × 2 and 3 × 3 Spurs vs RF Input Power (Single Input Tone) 2 × 2 and 3 × 3 Spurs vs LO Input Power (Single Input Tone) TYPICAL AC PERFOR A CE CHARACTERISTICSUW 1900MHz Upconverting Mixer Application: V CC = 3V, ICC = 10mA, EN = 3V, TA = 25°C, fIN = 140MHz, PIN = –20dBm (–20dBm/tone for 2-tone IIP3 tests, Δf = 1MHz), fLO = 1760MHz, PLO = –2dBm, output measured at 1900MHz, unless otherwise noted. (Test circuit shown in Figure 1) 900MHz Downconverting Mixer Application: VCC = 3V, ICC = 10mA, EN = 3V, TA = 25°C, fIN = 900MHz, PIN = –20dBm (–20dBm/tone for 2-tone IIP3 tests, Δf = 1MHz), fLO = 760MHz, PLO = –2dBm, output measured at 140MHz, unless otherwise noted. (Test circuit shown in Figure 2)

VOLTAGE (V) 2.5 GAIN (dB), IIP3 (dBm)3 3.5 4.5 5

5560 G30

3 4 5.5 25°C 85°C –40 °C IIP3 GAIN RF INPUT POWER (dBm) OUTPUT POWER (dBm/Tone)

5560 G31

–80 –60 –40 –20 –90 –70 –50 –30 –10 IFOUT IM3 25°C 85°C –40 °C RF INPUT FREQUENCY (MHz) GAIN (dB), IIP3 (dBm) NOISE FIGURE (dB)

5560 G32

25°C 85°C –40 °C IIP3 GAIN SSB NF LO INPUT POWER (dBm) –10 –4 0

5560 G33

–8 –6 –2 2 GAIN (dB), IIP3 (dBm) 25°C 85°C –40 °C IIP3 GAIN LO INPUT POWER (dBm) –10 NOISE FIGURE (dB) –8 –6 –4 –2

5560 G34

25°C 85°C –40 °C LO FREQUENCY (MHz) 420 LEAKAGE (dBm) –30 –20 –10

5560 G35

–40 –50 520470 570 620 –60 –70 LO-OUT LO-IN RF INPUT POWER (dBm) OUTPUT POWER (dBm)

5560 G36

–20 –15 –5 –10 0 –110 –70 –30 –90 –50 –10 TA = 25°C fLO = 520MHz fIF = 70MHz 3RF – 3LO fRF = 496.7MHz IFOUT fRF = 450MHz 2RF – 2LO fRF = 485MHz LO INPUT POWER (dBm)

5560 G37

–110 –100 –90 –80 –70 –50 –60OUTPUT POWER (dBm) TA = 25°C fLO = 520MHz fIF = 70MHz 3RF – 3LO fRF = 496.7MHz 2RF – 2LO fRF = 485MHz Conversion Gain and IIP3 vs Supply Voltage IFOUT and IM3 vs RF Input Power (Two Input Tones) Conversion Gain, IIP3 and SSB NF vs RF Input Frequency Conversion Gain and IIP3 vs LO Input Power SSB Noise Figure vs LO Input Power LO-IN and LO-OUT Leakage vs LO Frequency IF OUT, 2 × 2 and 3 × 3 Spurs vs RF Input Power (Single Input Tone) 2 × 2 and 3 × 3 Spurs vs LO Input Power (Single Input Tone) TYPICAL AC PERFOR A CE CHARACTERISTICSUW 900MHz Downconverting Mixer Application: V CC = 3V, ICC = 10mA, EN = 3V, TA = 25°C, fIN = 900MHz, PIN = –20dBm (–20dBm/tone for 2-tone IIP3 tests, Δf = 1MHz), fLO = 760MHz, PLO = –2dBm, output measured at 140MHz, unless otherwise noted. (Test circuit shown in Figure 2) 450MHz Downconverting Mixer Application: VCC = 3V, ICC = 10mA, EN = 3V, TA = 25°C, fIN = 450MHz, PIN = –20dBm (–20dBm/tone for 2-tone IIP3 tests, Δf = 1MHz), fLO = 520MHz, PLO = –2dBm, output measured at 70MHz, unless otherwise noted. (Test circuit shown in Figure 3)

INPUT FREQUENCY (MHz) 1700 1850 1950

5560 G38

GAIN, NF (dB), IIP3 (dBm) 25°C 85°C –40 °C SSB NF IIP3 GAIN LO INPUT POWER (dBm) –10 –8 –6 –4 –2

5560 G39

GAIN (dB) IIP3 (dBm) 25°C 85°C –40 °C IIP3 GAIN LO INPUT POWER (dBm) –10 NOISE FIGURE (dB) –8 –6 –4 –2

5560 G40

25°C 85°C –40 °C LO FREQUENCY (MHz) 1560 –50 –40 –30 –20 1610 1660 1710 1760

5560 G41

–10LEAKAGE (dBm) LO-OUT LO-IN RF INPUT POWER (dBm) OUTPUT POWER (dBm)

5560 G42

–20 –15 –5 –10 0 –70 –30 –90 –50 –10 TA = 25°C fLO = 1760MHz fIF = 140MHz 3RF – 3LO fRF = 1806.7MHz IFOUT fRF = 1900MHz 2RF – 2LO fRF = 1830MHz LO INPUT POWER (dBm)

5560 G43

–100 –90 –80 –70 –50 –40 –60OUTPUT POWER (dBm) TA = 25°C fLO = 1760MHz fIF = 140MHz 3RF – 3LO fRF = 1806.7MHz 2RF – 2LO fRF = 1830MHz Conversion Gain, IIP3 and SSB NF vs RF Input Frequency Conversion Gain and IIP3 vs LO Input Power TYPICAL AC PERFOR A CE CHARACTERISTICSUW 1900MHz Downconverting Mixer Application: V CC = 3V, ICC = 10mA, EN = 3V, TA = 25°C, fIN = 1900MHz, PIN = –20dBm (–20dBm/tone for 2-tone IIP3 tests, Δf = 1MHz), fLO = 1760MHz, PLO = –2dBm, output measured at 140MHz, unless otherwise noted. (Test circuit shown in Figure 2) SSB Noise Figure vs LO Input Power LO-IN and LO-OUT Leakage vs LO Frequency IF OUT, 2 × 2 and 3 × 3 Spurs vs RF Input Power (Single Input Tone) 2 × 2 and 3 × 3 Spurs vs LO Input Power (Single Input Tone)

LO–, LO + (Pins 1, 8): Differential Inputs for the Local Oscillator Signal. The LO input impedance is approxi- mately 180 Ω, thus external impedance matching is required. The LO pins are internally biased to approxi- mately 1V below V CC; therefore, DC blocking capacitors are required. The LT5560 is characterized and production tested with a single-ended LO drive, though a differential LO drive can be used. EN (Pin 2): Enable Pin. An applied voltage above 2V will activate the IC. For V EN below 0.3V, the IC will be shut down. If the enable function is not required, then this pin should be connected to VCC. The typical enable pin input current is 25µA for EN = 3V. The enable pin should not be allowed to ﬂ oat because the mixer may not turn on reliably. Note that at no time should the EN pin voltage be allowed to exceed V CC by more than 0.3V. IN+, IN– (Pins 3, 4): Differential Inputs. These pins should be driven with a differential signal for optimum performance. Each pin requires a DC current path to ground. Resistance to ground will cause a decrease in the mixer current. With 0Ω resistance, approximately 6mA of DC current ﬂ ows out of each pin. For lowest LO leakage to the output, the DC resistance from each pin to ground should be equal. An impedance transformation is required to match the differential input to the desired source impedance. OUT –, OUT+ (Pins 5, 6): Differential Outputs. An imped- ance transformation may be required to match the outputs. These pins require a DC current path to VCC . VCC (Pin 7): Power Supply Pin for the Bias Circuits. Typical current consumption is 1.5mA. This pin should be externally bypassed with a 1nF chip capacitor. Exposed Pad (Pin 9): PGND. Circuit Ground Return for the Entire IC. This must be soldered to the printed circuit board ground plane.

IN– OUT+ OUT– INPUT BUFFER AMPLIFIER EN 5560 BD 1 8 2 7 LO– LO+ DOUBLE- BALANCED MIXERBIAS VCC

Note: C4 and C5 are not used. Figure 1. Test Schematic for 900MHz and 1900MHz Upconverting

5560 F01

Note: C4 and C5 are not used. Figure 2. Test Schematic for 900MHz and 1900MHz Downconverting

5560 F02

Figure 3. Test Schematic for 450MHz Upconverting

5560 F03

APPLICATIO S I FOR ATIOWU UU The LT5560 consists of a double-balanced mixer, a com- mon-base input buffer ampliﬁ er, and bias/enable circuits. The IC has been designed for frequency conversion applica- tions up to 4GHz, though operation over a wider frequency range may be possible with reduced performance. For best performance, the input and output should be connected differentially. The LO input can be driven by a single-ended source with either low side or high side LO operation. The LT5560 is characterized and production tested using a single-ended LO drive. The quiescent DC current of the LT5560 can be adjusted from less than 4mA to approximately 13.5mA through the use of an external resistor. This functionality gives the user the ability to make application dependent trade-offs between IIP3 performance and DC current. Three demo boards, as described in Table 1, are available depending on the desired application. The listed input and output frequency ranges are based on measured 12dB return loss bandwidths and the LO port frequency ranges are based on 10dB return loss bandwidths. The general circuit topologies are shown in Figures 1, 2 and 3 for DC963B, DC991A and DC1027A, respectively. The board layouts are shown in Figures 23, 24 and 25. The low frequency board, DC1027A, can be reconﬁ gured for upconverting applications. Figure 4. Input Port with Lowpass nected from pins 3 and 4 to ground.

5560 F04

Table 1. LT5560 Demo Board Descriptions

DESCRIPTION

FREQ. (MHz) OUTPUT FREQ. (MHz) LO FREQ. (MHz) Upconverting, Cellular Band DC963B 50-190 850-940 530-930 Downconverting Cellular Band DC991A 710-1300 110-170 530-930 Downconverting, VHF Band DC1027A 115-295 3-60 180-310 Note: Consult factory for demo boards for UMTS, WLAN and other bands. The lowpass impedance matching topology shown may be used to transform the differential input impedance at pins 3 and 4 to match that of the signal source. The differential input impedances for several frequencies are listed in Table 2. Table 2. Input Signal Port Differential Impedance

capacitance and inductance are calculated below. Figure 5. Small Signal Circuit for the Input Port

5560 F05

account for layout and component parasitics.

Figure 6. Input Return Loss vs Frequency Table 3. Component Values for Input Matching

1 WBC1-1TL 1:1 NA 0 390-560

Note 1: Series 5.6pF capacitor is used at the input (see Figure 3). Figure 7. LO Input Schematic

5560 F07

5560 F06

5560 F08

Figure 8. Typical LO Input Return Loss vs Table 5. Figure 8 shows the typical return loss response Table 4. Single-Ended LO Input Impedance (Parallel Equivalent) Table 5. Component Values for LO Input Matching

Figure 9. The output pins, OUT+ and OUT–, are internally externally through a transformer or balun. Figure 9. Output Port Schematic Figure 10. Output Port Small-Signal Model

5560 F09

5560 F10

5560 F11

improve the impedance match. Figure 11. Output Return Loss vs Frequency Table 6. Output Port Differential Impedance (Parallel Equivalent) Table 7. Component Values for Output Matching inductor at the C10 location.

5560 F13

5560 F14

5560 F15

Figure 12. Enable Input Circuit mended that the enable function be used in this manner. EN pin ESD diode, potentially damaging the IC. Figure 13. Typical Supply Current vs R1 Value Figure 14. 900MHz Upconverting Mixer Gain, Figure 15. 900MHz Downconverting Mixer Gain, has a greater effect on noise ﬁ gure at larger values of R1. Figure 13 shows the supply current as a function of R1.

5560 F12

placed in parallel to R1 for best noise ﬁ gure.

5560 F16

5560 F17

5560 F18

Figure 16. LT5560 Performance in 240MHz Figure 17. LT5560 Performance in 140MHz Figure 18. LT5560 Performance as a lowing examples illustrate the versatility of the LT5560. uses the topology shown in Figure 1. this case is shown in Figure 3. circuit is the same topology as shown in Figure 2.

5560 F19

A lumped element balun topology is shown in Figure 19. C is the desired center frequency.

•2 π C fR RO CA B = 1 2• • • •π The computed values are approximate, as they don’t ac- count for the effects of parasitics of the IC and external components. Inductor L DC is used to provide a DC path to ground or to VCC depending on whether the circuit is used at the input or output of the LT5560. In some cases, it is desirable to make the value of L DC as large as practical to minimize loading on the circuit; however, the value can also be op- timized to tune the impedance match. The shunt inductor, L O, provides the DC path for the other balanced port. Capacitor C DC may be required for DC blocking but can often be omitted if DC decoupling is not required.

Figure 19. Lumped Element Balun while the 100pF cap provides DC decoupling. result in calculated values of CO = 4.9pF and LO = 265nH.

mixer with lumped element baluns are shown on page 1. Figure 20. Performance of 900MHz Downconverting at the open-collector IF outputs instead of large inductors. the examples below are summarized in Table 8. Table 8. Low-Frequency Performance Figure 21. A 200MHz to 450KHz Downconverter with Active IF Interface

5560 F20

5560 F21

Figure 23. Upconverting Mixer Evaluation Board (DC963B)—See Table 1 Figure 22. 90MHz Downconverter with a Low Cost Discrete

5560 F22

Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representa- tion that the interconnection of its circuits as described herein will not infringe on existing patent rights. 8-Lead Plastic DFN (3mm × 3mm) (Reference LTC DWG # 05-08-1698) 3.00 ±0.10 (4 SIDES) NOTE: 1. DRAWING TO BE MADE A JEDEC PACKAGE OUTLINE M0-229 VARIATION OF (WEED-1) 2. DRAWING NOT TO SCALE 3. ALL DIMENSIONS ARE IN MILLIMETERS 4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE 5. EXPOSED PAD SHALL BE SOLDER PLATED 6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION ON TOP AND BOTTOM OF PACKAGE 0.38 ± 0.10 BOTTOM VIEW—EXPOSED PAD 1.65 ± 0.10 (2 SIDES) 0.75 ±0.05 R = 0.115 TYP 2.38 ±0.10 (2 SIDES) PIN 1 TOP MARK (NOTE 6)

0.200 REF

0.00 – 0.05 (DD8) DFN 1203 0.25 ± 0.05 2.38 ±0.05 (2 SIDES) RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS 1.65 ±0.05 (2 SIDES) 2.15 ±0.05 0.50 BSC 0.675 ±0.05 3.5 ±0.05 PACKAGE OUTLINE 0.25 ± 0.05

0.50 BSC

Linear Technology Corporation 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 ● FAX: (408) 434-0507 ● www.linear.com © LINEAR TECHNOLOGY CORPORATION 2006 LT 0406 • PRINTED IN USA RELATED PARTS PART NUMBER DESCRIPTION COMMENTS Infrastructure LT5511 High Linearity Upconverting Mixer RF Output to 3GHz, 17dBm IIP3, Integrated LO Buffer LT5512 1KHz to 3GHz High Signal Level Downconverting Mixer 20dBm IIP3, Integrated LO Buffer, HF/VHF/UHF Optimized LT5514 Ultralow Distortion, IF Ampliﬁ er/ADC Driver with Digitally Controlled Gain 850MHz Bandwidth, 47dBm OIP3 at 100MHz, 10.5dB to 33dB Gain Control Range LT5515 1.5GHz to 2.5GHz Direct Conversion Quadrature Demodulator 20dBm IIP3, Integrated LO Quadrature Generator LT5516 0.8GHz to 1.5GHz Direct Conversion Quadrature Demodulator 21.5dBm IIP3, Integrated LO Quadrature Generator LT5517 40MHz to 900MHz Quadrature Demodulator 21dBm IIP3, Integrated LO Quadrature Generator LT5518 1.5GHz to 2.4GHz High Linearity Direct Quadrature Modulator 22.8dBm OIP3 at 2GHz, –158.2dBm/Hz Noise Floor, 50Ω Single-Ended LO and RF Ports, 4-Ch W-CDMA ACPR = –64dBc at 2.14GHz LT5519 0.7GHz to 1.4GHz High Linearity Upconverting Mixer 17.1dBm IIP3 at 1GHz, Integrated RF Output Transformer with 50Ω Matching, Single-Ended LO and RF Ports Operation LT5520 1.3GHz to 2.3GHz High Linearity Upconverting Mixer 15.9dBm IIP3 at 1.9GHz, Integrated RF Output Transformer with 50Ω Matching, Single-Ended LO and RF Ports Operation LT5521 10MHz to 3700MHz High Linearity Upconverting Mixer LO Port Operation LT5522 400MHz to 2.7GHz High Signal Level Downconverting Mixer 4.5V to 5.25V Supply, 25dBm IIP3 at 900MHz, NF = 12.5dB, 50Ω Single-Ended RF and LO Ports LT5524 Low Power, Low Distortion ADC Driver with Digitally Programmable Gain 450MHz Bandwidth, 40dBm OIP3, 4.5dB to 27dB Gain Control LT5525 High Linearity, Low Power Downconverting Mixer 50Ω Single-Ended LO and RF Ports, 17.6 dBm IIP3 at 1900MHz, I CC = 28mA LT5526 High Linearity, Low Power Active Mixer 3V to 5.3V Supply, 16.5dBm IIP3, 100kHz to 2GHz RF, NF = 11dB, I CC = 28mA, –65dBm LO-RF Leakage LT5527 400MHz to 3.7GHz High Signal Level Downconverting Mixer IIP3 = 23.5dBm and NF = 12.5dB at 1900MHz, 4.5V to 5.25V Supply, ICC = 78mA, Single-Ended LO and RF Ports LT5528 1.5GHz to 2.4GHz High Linearity Direct Quadrature Modulator 21.8dBm OIP3 at 2GHz, –159.3dBm/Hz Noise Floor, 50Ω, 0.5VDC Baseband Interface, 4-Ch W-CDMA ACPR = –66dBc at 2.14GHz LT5568 700MHz to 1050MHz High Linearity Direct Quadrature Modulator 22.9dBm OIP3, –160dBm/Hz Noise Floor, –46dBc Image Rejection, –43dBm LO Leakage RF Power Detectors LTC ®5505 RF Power Detectors with >40dB Dynamic Range 300MHz to 3GHz, Temperature Compensated, 2.7V to 6V Supply LTC5507 100kHz to 1000MHz RF Power Detector 100kHz to 1GHz, Temperature Compensated, 2.7V to 6V Supply LTC5508 300MHz to 7GHz RF Power Detector 44dB Dynamic Range, Temperature Compensated, SC70 Package LTC5509 300MHz to 3GHz RF Power Detector 36dB Linear Dynamic Range, Low Power Consumption, SC70 Package LTC5532 300MHz to 7GHz Precision RF Power Detector Precision V OUT Offset Control, Adjustable Gain and Offset LT5534 50MHz to 3GHz Log RF Power Detector with 60dB Dynamic Range ±1dB Output Variation over Temperature, 38ns Response Time LTC5536 Precision 600MHz to 7GHz RF Detector with Fast Comparater 25ns Response Time, Comparator Reference Input, Latch Enable Input, –26dBm to +12dBm Input Range LT5537 Wide Dynamic Range Log RF/IF Detector Low Frequency to 800MHz, 83dB Dynamic Range, 2.7V to 5.25V Supply

Selected Specification

Linear Technology LT5560EDD overview.

Summary

0.01MHz to 4GHz Low Power Active Mixer

Description

0.01MHz to 4GHz Low Power Active Mixer

Source title LT5560EDD Datasheet(PDF) - Linear Technology

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