LT5521 LINER
Document overview
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Technical content
n Wideband Output Frequency Range to 3.7GHz n +24.2dBm IIP3 at 1.95GHz RF Output n Low LO Leakage: –42dBm n Integrated LO Buffer: Low LO Drive Level n Single-Ended LO Drive n Wide Single Supply Range: 3.15V to 5.25V n Double-Balanced Active Mixer n Shutdown Function n 16-Lead (4mm · 4mm) QFN Package n Cellular, W-CDMA, PHS and UMTS Infrastructure n Cable Downlink Infrastructure n Wireless Infrastructure n Fixed Wireless Access Equipment n High Linearity Mixer Applications DESCRIPTIO UFEATURES APPLICATIO SU TYPICAL APPLICATIO U PA 2.7nH LO INPUT –5dBm OUT+ GND OUT– VCCVCCVCCEN BIAS IN+ 110Ω LO IN– 2.7nH 4:1 BPF 82pF 6.8pF 1nF RF OUTPUT 5V DC
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6.8pF 1µF 110Ω 10pF 1nF IF INPUT 1nF BPF 1:1 Fundamental, 3rd Order Intermodulation Distortion vs Input Power The LT 5521 is a very high linearity mixer optimized for low distortion and low LO leakage applications. The chip includes a high speed LO buffer with single-ended input and a double-balanced active mixer. The LT5521 requires only –5dBm LO input power to achieve excellent distor- tion and noise performance, while reducing external drive circuit requirements. The LO buffer is internally 50 W matched for wideband operation. With a 250MHz input, a 1.7GHz LO and a 1.95GHz output frequency, the mixer has a typical IIP3 of +24.2dBm, –0.5dB conversion gain and a 12.5dB noise figure. The LT5521 offers exceptional LO-RF isolation, greatly reducing the need for output filtering to meet LO suppres- sion requirements. The device is designed to work over a supply voltage range from 3.15V to 5.25V. , LTC and LT are registered trademarks of Linear Technology Corporation. PIN (dBm) –100 OUTPUT POWER (dBm) –60 –20 –80 –40 –10 –6 –2 2
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6–12–14 –8 –4 0 4 PFUND IM3 fIF = 250MHz fLO = 1.7GHz fRF = 1.95GHz PLO = –5dBm TA = 25°C
(Note 1) Operating Ambient Temperature Range .. – 40°C to 85°C LT5521EUF TJMAX = 125°C, qJA = 37°C/W EXPOSED PAD (PIN 17) IS GND MUST BE SOLDERED TO PCB ABSOLUTE MAXIMUM RATINGSW WW U PACKAGE/ORDER INFORMATIONW UU VCC = 5V, EN = 2.9V, TA = 25°C unless otherwise noted. Test circuit shown in Figure 1. (Note 2) Consult LTC Marketing for parts specified with wider operating temperature ranges. 16 15 14 13 5 6 7 8 TOP VIEW UF PACKAGE 16-LEAD (4mm · 4mm) PLASTIC QFN 1GND IN+ IN– GND OUT+ GND GND OUT GND LO GND GND EN V CC VCC VCC DC ELECTRICAL CHARACTERISTICS PARAMETER CONDITIONS MIN TYP MAX UNITS LO Frequency Range 10 to 4000 MHz Input Frequency Range 10 to 3000 MHz Output Frequency Range 10 to 3700 MHz LO Input Power –5 1 dBm LO Return Loss Z O = 50W , fLO = 1700MHz 12 dB Output Return Loss Requires Matching 12 dB Input Return Loss (Pins 2, 3) Requires Matching 15 dB VCC = 5V, EN = 2.9V, TA = 25°C unless otherwise noted. Test circuit shown in Figure 1. (Note 2) AC ELECTRICAL CHARACTERISTICS PARAMETER CONDITIONS MIN TYP MAX UNITS Supply Voltage 3.15 5.25 V Supply Current 82 98 mA Shutdown Current EN = 0.2V 20 100 mA Enable (EN) Low = Off, High = On Enable Mode EN = High 2.9 V Disable Mode EN = Low 0.2 V Enable Current EN = 5V 137 mA Shutdown Enable Current EN = 0.2V 0.1 mA Turn-On Time (Note 3) 200 ns Turn-Off Time (Note 4) 200 ns LO Voltage (Pin 15) Internally Biased 0.96 V Input Voltage (Pins 2, 3) V CC = 5V, Internally Biased 2.20 V VCC = 3.3V, Internally Biased 0.46 V UF PART MARKING 5521
PARAMETER CONDITIONS MIN TYP MAX UNITS Conversion Gain –0.5 dB Conversion Gain Variation vs Temperature –0.009 dB/ °C Input P1dB +10 dBm Single-Side Band Noise Figure 12.5 dB IIP3 Two Tones, DfIF = 5MHz, PIF = –7dBm/Tone +24.2 dBm IIP2 (Note 6) Two Tones, DfIF = 5MHz, PIF = –7dBm/Tone, +49 dBm fLO + fIF1 + fIF2 LO-RF Leakage –42 dBm LO-IF Leakage –40 dBm VCC = 5V, EN = 2.9V, fIF = 250MHz, PIF = –7dBm, fLO = 1700MHz, PLO = –5dBm, fRF = 1950MHz, TA = 25°C. Test circuit shown in Figure 1. AC ELECTRICAL CHARACTERISTICS PARAMETER CONDITIONS MIN TYP MAX UNITS Conversion Gain –0.5 dB Conversion Gain Variation vs Temperature –0.012 dB/ °C Input P1dB +10 dBm Single-Side Band Noise Figure 12.8 dB IIP3 Two Tones, DfIF = 5MHz, PIF = –7dBm/Tone +24.5 dBm IIP2 (Note 6) Two Tones, DfIF = 5MHz, PIF = –7dBm/Tone, +49 dBm fLO + fIF1 + fIF2 LO-RF Leakage –38 dBm LO-IF Leakage –59 dBm VCC = 5V, EN = 2.9V, fIF = 44MHz, PIF = –7dBm, fLO = 1001MHz, PLO = –5dBm, fRF = 1045MHz, TA = 25°C. PARAMETER CONDITIONS MIN TYP MAX UNITS Conversion Gain –0.5 dB Conversion Gain Variation vs Temperature –0.013 dB/ °C Input P1dB +11 dBm Single-Side Band Noise Figure 13.5 dB IIP3 Two Tones, DfIF = 5MHz, PIF = –7dBm/Tone +25.8 dBm IIP2 (Note 6) Two Tones, DfIF = 5MHz, PIF = –7dBm/Tone, +50 dBm fLO + fIF1 + fIF2 LO-RF Leakage –36 dBm LO-IF Leakage –60 dBm VCC = 3.3V, EN = 2.9V, fIF = 250MHz, PIF = –7dBm, fLO = 1700MHz, PLO = –5dBm, fRF = 1950MHz, TA = 25°C. (Note 5) Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. Note 2: Specifications over the –40°C to 85°C temperature range are assured by design, characterization and correlation with statistical process controls. Note 3: Interval from the rising edge of the Enable input to the time when the RF output is within 1dB of its steady-state output. Note 4: Interval from the falling edge of the Enable signal to a 20dB drop in the RF output power. Note 5: R1 = R7 = 22.6W , Z1 = Z7 = 100nH. Note 6: Second harmonic distortion measured at fLO + fIF1 + fIF2.
W UTYPICAL DC PERFOR A CE CHARACTERISTICS Supply Current vs Supply Voltage (5V Application) Supply Current vs Supply Voltage (3.3V Application) W UTYPICAL AC PERFOR A CE CHARACTERISTICS fLO = 1700MHz, fIF = 250MHz, fRF = 1950MHz, PLO = –5dBm, VCC = 5V, EN = 2.9V, TA = 25°C, unless otherwise noted. Test circuit shown in Figure 1 is tuned for 1.95GHz output frequency and VCC = 5V. Fundamental, 2nd and 3rd Order Intermodulation Distortion vs Input Power Conversion Gain vs Input Power Conversion Gain and IIP3 vs RF Frequency Test circuit shown in Figure 1. VCC (V) 4.7 ICC (mA) 5.0 5.2
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4.8 4.9 5.1 100 85°C 25°C –40°C 5.3 VCC (V) 3.1 ICC (mA) 85°C 25°C –40°C 3.2 3.3 3.4 3.5
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PIN (dBm) –100 OUTPUT POWER (dBm) –60 –20 –80 –40 –10 –6 –2 2
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6–12–14 –8 –4 0 4 85°C 25°C –40°C PFUND IM3 IM2 IM2 IM3 PIN (dBm) –25 GC (dB) –0.5 0.5
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–1.0 –1.5 –15 –5–20 10 –10 0 15 –2.0 –2.5 1.0 –40°C 25°C 85°C RFOUT (MHz) 1750 2050
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GC (dB) IIP3 (dBm) 85°C 25°C –40°C
LO-RF Leakage vs LO Frequency Conversion Gain, IIP3 and Noise Figure vs Supply Voltage Conversion Gain and IIP3 vs LO Power LO-RF Leakage vs LO Power LO-RF Leakage vs Supply Voltage Noise Figure vs LO Power W UTYPICAL AC PERFOR A CE CHARACTERISTICSfLO = 1700MHz, fIF = 250MHz, fRF = 1950MHz, PLO = –5dBm, VCC = 5V, EN = 2.9V, TA = 25°C, unless otherwise noted. Test circuit shown in Figure 1 is tuned for 1.95GHz output frequency and VCC = 5V. LO FREQUENCY (MHz) 1500 –48 LEAKAGE (dBm) –46 –44 –42 –40 1600 1700 85°C 1800 1900
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–38 –36 1550 1650 1750 1850 –40°C 25°C VCC (V) 4.6 GC (dB) IIP3 (dBm) AND NOISE FIGURE (dB) 4.8 5.0 5.2 5.4
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4.7 4.9 5.1 5.3 85°C 25°C –40°C NF GC LO POWER (dBm) –25 –10 0
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–20 –15 –5 GC IIP3 51 0 GC (dB) IIP3 (dBm) 85°C 25°C –40°C LO POWER (dBm) –25 –50 LO LEAKAGE (dBm) –48 –44 –42 –40 –32
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–46 –15–20 05–10 10 –38 –36 –34 85°C 25°C –40°C VCC (V) 4.7 LO LEAKAGE (dBm) –44 –42 –40°C–40 5.0 5.2
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–46 –48 –50 4.8 4.9 5.1 –38 –36 –34 5.3 85°C 25°C LO POWER (dBm) –20 NOISE FIGURE (dB)
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–15 –10 –5 5 85°C –40°C 25°C Low Side LO (LS) and High Side LO (HS) Comparison: Conversion Gain and IIP3 vs RF Frequency RFOUT (MHz) 1750 2050
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GC (dB) IIP3 (dBm) LSGC IIP3 LS: R1 = R7 = 110Ω HS: R1 = R7 = 121Ω fIF = 250MHz Low Side LO (LS) and High Side LO (HS) Comparison: Noise Figure vs RF Frequency RFOUT (MHz) 1700 11.5 NOISE FIGURE (dB) 11.7 12.1 12.3 12.5 LS 13.5 12.9 1800 1900 1950
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11.9 13.1 13.3 12.7 1750 1850 2000 2050 2100 HS LS: R1 = R7 = 110Ω HS: R1 = R7 = 121Ω fIF = 250MHz
W UTYPICAL AC PERFOR A CE CHARACTERISTICSfLO = 1001MHz, fIF = 44MHz, fRF = 1045MHz, PLO = –5dBm, VCC = 5V, EN = 2.9V, TA = 25°C, unless otherwise noted. Test circuit shown in Figure 1 is tuned for 1.045GHz output frequency. Fundamental, 2nd and 3rd Order Intermodulation Distortion vs Input Power Conversion Gain vs Input Power Conversion Gain and IIP3 vs RF Frequency, Fixed IF INPUT POWER (dBm) –14 –120 OUTPUT POWER (dBm) –100 –60 –40 –20 –12 –4 0
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–80 –6 4 6–10 –8 –2 2 85°C 25°C –40°C PFUND IM3 IM3 IM2 IM2 PIN (dBm) –25 GC (dB) –0.5 0.5
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–1.0 –1.5 –15 –5–20 10 –10 0 15 –2.0 –2.5 1.0 –40°C 25°C 85°C RFOUT (MHz) 920 1120
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GC (dB) IIP3 (dBm)85°C 25°C –40°C LO-RF Leakage vs LO Frequency Conversion Gain, IIP3 and Noise Figure vs Supply Voltage Conversion Gain and IIP3 vs LO Power LO FREQUENCY (MHz) 850 –42 LEAKAGE (dBm) –40 –38 –36 900 950 1000 1050
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–34 –32 –41 –39 –37 –35 –33 1150 –40°C 25°C 85°C VCC (V) 4.6 GC (dB) IIP3 (dBm) AND NOISE FIGURE (dB) 4.8 5.0 5.2 5.4
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4.7 4.9 5.1 5.3 85°C 25°C –40°C NF GC LO POWER (dBm) –25 –10 0
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–20 –15 –5 GC IIP3 51 0 GC (dB) IIP3 (dBm) 85°C 25°C –40°C LO-RF Leakage vs LO Power LO POWER (dBm) –25 LO LEAKAGE (dBm) –34 –32 –30 –10 0
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–36 –38 –20 –15 –5 5 10 –40 –42 –40°C 25°C 85°C LO-RF Leakage vs Supply Voltage VCC (V) 4.6 LO LEAKAGE (dBm) –36 –34 –32 5.2
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–38 –40 –42 –44 –30 –40°C 25°C 85°C
W UTYPICAL AC PERFOR A CE CHARACTERISTICSfLO = 1001MHz, fIF = 44MHz, fRF = 1045MHz, PLO = –5dBm, VCC = 5V, EN = 2.9V, TA = 25°C, unless otherwise noted. Test circuit shown in Figure 1 is tuned for 1.045GHz output frequency. Noise Figure vs LO Power Low Side LO (LS) and High Side LO (HS) Comparison: Noise Figure vs RF Frequency LO POWER (dBm) –20 NOISE FIGURE (dB)
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–15 –10 85°C –40°C 25°C –5 5 RFOUT (MHz) 11.0 NOISE FIGURE (dB)12.0 13.0 HS LS 14.0 11.5 12.5 13.5 985 1025 1065 1105
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fIF = 44MHz shown in Figure 1 is tuned for 1.95GHz output frequency and VCC = 3.3V. POUT, IM3 and IM2 vs Input Power Conversion Gain vs Input Power Conversion Gain and IIP3 vs RF Frequency PIN (dBm) –14 OUTPUT POWER (dBm) –100 –60 –40 –20 –12 –4 0
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–80 –6 4 6–10 –8 –2 2 85°C 25°C –40°C POUT IM2 IM2 IM3 IM3 PIN (dBm) –20 GC (dB) –0.5 0.5 85°C
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–1.0 –1.5 –15 –10 01 0 –2.0 –2.5 25°C –40°C RFOUT (MHz) 1750 GC (dB) IIP3 (dBm) 2050
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1850 19501800 2100 1900 2000 2150 GC IIP3 85°C 25°C –40°C RFOUT (MHz) 940 GC (dB) IIP3 (dBm) IIP3 G C 990 1040 LS LS HS HS 1090 1140
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fIF = 44MHz Low Side LO (LS) and High Side LO (HS) Comparison: Conversion Gain and IIP3 vs RF Frequency
W UTYPICAL AC PERFOR A CE CHARACTERISTICSfLO = 1.7GHz, fIF = 250MHz, fRF = 1.95GHz, PLO = –5dBm, VCC = 3.3V, EN = 2.9V, TA = 25°C, unless otherwise noted. Test circuit shown in Figure 1 is tuned for 1.95GHz output frequency and VCC = 3.3V. LO-RF Leakage vs LO Frequency LO FREQUENCY (MHz) 1500 LEAKAGE (dBm) –36 –34 1900
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–38 –40 1600 1700 18001550 1650 1750 1850 –32 –37 –35 –39 –33 85°C 25°C –40°C LO POWER (dBm) –25 GC (dB) IIP3 (dBm)
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–15 –5–20 5 –10 10 GC IIP3 85°C 25°C –40°C LO POWER (dBm) –25 –36 –34 85°C –30 –10 0
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–38 –40 –20 –15 –5 5 10 –42 –44 –32LO LEAKAGE (dBm) 25°C –40°C Conversion Gain and IIP3 vs LO Power LO-RF Leakage vs LO Power LO Leakage vs Supply Voltage VCC (V) 3.10 –2 GC (dB) IIP3 (dBm) AND NOISE FIGURE (dB) 3.20 IIP3 NF GC 3.30 3.40 3.50
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3.15 3.25 3.35 3.45 85°C 25°C –40°C Noise Figure vs LO Power LO POWER (dBm) –20 NOISE FIGURE (dB) –15 –10 –5 0
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85°C 25°C –40°C VCC (V) 3.0 –50 LO LEAKAGE (dBm) –44 –38 –32 3.1 3.2 3.3 3.4
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3.5 –40°C 85°C –26 –20 –47 –41 –35 –29 –23 3.6 25°C Conversion Gain, IIP3 and Noise Figure vs Supply Voltage UUUPI FU CTIO S GND (Pins 1, 4, 10, 11, 13, 14, 16): Ground. These pins are internally connected to the Exposed Pad for improved isolation. They should be connected to RF ground on the printed circuit board, and are not intended to replace the primary grounding through the backside of the package. IN +, IN – (Pins 2, 3): Differential Input Pins. Each pin requires a resistive DC path to ground. See Applications Information for choosing the resistor value. External match- ing is required. EN (Pin 5): Enable Input Pin. The enable voltage should be at least 2.9V to turn the chip on and less than 0.2V to turn the chip off. V CC (Pins 6, 7, 8): Power Supply Pins. Total current draw for these three pins is 40mA. OUT+, OUT– (Pins 12, 9): RF Output Pins. These pins must have a DC connection to the supply voltage (see Applica- tions Information). These pins draw 20mA each. External matching is required. LO (Pin 15): Local Oscillator Input. This input is internally DC biased to 0.96V. Input signal must be AC coupled. Exposed Pad (Pin 17): Circuit Ground Return for the Entire IC. For best performance, this pin must be soldered to the printed circuit board.
Figure 1. Demonstration Board Schematic
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Note 1: Tabulated values are used for characterization measurements. Note 2: Components shown on the schematic are included for consistency with the demo board. If no value is shown for the component, the site is unpopulated. have been measured and have similar performance. Table 1. Demonstration Board Bill of Materials1, 2
supply voltage ranging from 3.15V to 5.25V. Table 2. Port Impedance for a matched input at 250MHz. COM CT0010 transformer (T1, Figure 1). Table 3. Component Values for Input Matching Using the Figure 2. Signal Input with External Matching Figure 3. IF Input Return Loss
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pression; larger values will degrade the conversion gain. tion is worse at lower input frequencies. Table 5. Minimum External Resistor Values vs Supply Voltage and noise figure and a corresponding decrease in IIP3. Figure 5. Alternative Transformerless Input Circuit
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Figure 4. Low Frequency Signal Input
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Table 4. Component Values for Discrete Bridge Balun Signal
mize sensitivity to power supply variation. 300W differential resistance between the output pins. balun to provide differential to single-ended conversion. the symmetry of the external output matching circuitry. Figure 7. IIP3, GC and Noise Figure vs Core Current, Figure 6. IIP3, GC and Noise Figure vs External Resistance,
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Figure 8. Comparison of 3.3V Performance With Figure 9. Simplified Output Circuit
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Table 6. Matching Values Using M/A-COM ETC1.6-4-2-3 Table 7. Matching Values Using M/A-COM MABAES0054 840MHz and as high as 2.4GHz. Figure 10. Output Return Loss vs Frequency
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performance is shown in Figure 11.
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Figure 11. LT5521 Performance for an Application Tuned to amplification through the LO buffer. Figure 12. Simplified LO Input Circuit
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resistor value (R1 and R7) is increased to 121W . 0.2V. If the EN pin is not connected, the chip is disabled. floating for normal operation. protect the EN pin to avoid inadvertant damage to the IC. Figure 13. LO Port Return Loss Figure 14. Enable Input Circuit
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coupling into the output through the power supply. outstanding ACPR performance in a variety of applications. 64 DPCH W-CDMA signals at 1.95GHz output frequency.
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Figure 15. Single Channel W-CDMA ACPR Figure 16. 4-Channel W-CDMA ACPR,
Information furnished by Linear Technology Corporation is believed to be accurate and reliable. tation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
- DRAWING CONFORMS TO JEDEC PACKAGE OUTLINE MO-220 VARIATION (WGGC)
- ALL DIMENSIONS ARE IN MILLIMETERS
- DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE
- EXPOSED PAD SHALL BE SOLDER PLATED
- SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION
0.65 BSC
0.200 REF
Figure 17. Top View of Demo Board
ª LINEAR TECHNOLOGY CORPORATION 2004 LT/TP 0604 1K • PRINTED IN THE USA RELATED PARTS Linear Technology Corporation 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 l FAX: (408) 434-0507 l www.linear.com PART NUMBER DESCRIPTION COMMENTS Infrastructure LT5511 High Linearity Upconverting Mixer RF Output to 3GHz, 17dBm IIP3, Integrated LO Buffer LT5512 DC-3GHz High Signal Level Downconverting Mixer DC to 3GHz, 21dBm IIP3, Integrated LO Buffer LT5514 Ultralow Distortion, Wideband Digitally Controlled BW = 850MHz, OIP3 = 47dBm at 100MHz, 22.5dB Gain Control Range Gain Amplifier/ADC Driver LT5515 1.5GHz to 2.5GHz Direct Conversion Quadrature Demodulator 20dBm IIP3, Integrated LO Quadrature Generator LT5516 0.8GHz to 1.5GHz Direct Conversion Quadrature Demodulator 21.5dBm IIP3, Integrated LO Quadrature Generator LT5517 40MHz to 900MHz Quadrature Demodulator 21dBm IIP3, Integrated LO Quadrature Generator LT5519 0.7GHz to 1.4GHz High Linearity Upconverting Mixer 17.1dBm IIP3 at 1GHz, Integrated RF Output Transformer with 50 W Matching, Single-Ended LO and RF Ports Operation LT5520 1.3GHz to 2.3GHz High Linearity Upconverting Mixer 15.9dBm IIP3 at 1.9GHz, Integrated RF Output Transformer with 50 W Matching, Single-Ended LO and RF Ports Operation LT5522 600MHz to 2.7GHz High Signal Level Downconverting Mixer 4.5V to 5.25V Supply, 25dBm IIP3 at 900MHz, NF = 12.5dB, 50W Single-Ended RF and LO Ports RF Power Detectors LT5504 800MHz to 2.7GHz RF Measuring Receiver 80dB Dynamic Range, Temperature Compensated, 2.7V to 5.25V Supply LTC 5505 RF Power Detectors with >40dB Dynamic Range 300MHz to 3GHz, Temperature Compensated, 2.7V to 6V Supply LTC5507 100kHz to 1000MHz RF Power Detector 100kHz to 1GHz, Temperature Compensated, 2.7V to 6V Supply LTC5508 300MHz to 7GHz RF Power Detector 44dB Dynamic Range, Temperature Compensated, SC70 Package LTC5509 300MHz to 3GHz RF Power Detector 36dB Linear Dynamic Range, Low Power Consumption, SC70 Package LTC5530 300MHz to 7GHz Precision RF Power Detector Precision V OUT Offset Control, Shutdown, Adjustable Gain LTC5531 300MHz to 7GHz Precision RF Power Detector Precision V OUT Offset Control, Shutdown, Adjustable Offset LTC5532 300MHz to 7GHz Precision RF Power Detector Precision V OUT Offset Control, Adjustable Gain and Offset LT5534 50MHz to 3GHz RF Power Detector 60dB Dynamic Range, Temperature Compensated, SC70 Package Low Voltage RF Building Blocks LT5500 1.8GHz to 2.7GHz Receiver Front End 1.8V to 5.25V Supply, Dual-Gain LNA, Mixer, LO Buffer LT5502 400MHz Quadrature IF Demodulator with RSSI 1.8V to 5.25V Supply, 70MHz to 400MHz IF, 84dB Limiting Gain, 90dB RSSI Range LT5503 1.2GHz to 2.7GHz Direct IQ Modulator and 1.8V to 5.25V Supply, Four-Step RF Power Control, Upconverting Mixer 120MHz Modulation Bandwidth LT5506 500MHz Quadrature IF Demodulator with VGA 1.8V to 5.25V Supply, 40MHz to 500MHz IF, –4dB to 57dB Linear Power Gain, 8.8MHz Baseband Bandwidth LT5546 500MHz Ouadrature IF Demodulator with 17MHz Baseband Bandwidth, 40MHz to 500MHz IF, 1.8V to 5.25V VGA and 17MHz Baseband Bandwidth Supply, –7dB to 56dB Linear Power Gain RF Power Controllers LTC1757A RF Power Controller Multiband GSM/DCS/GPRS Mobile Phones LTC1758 RF Power Controller Multiband GSM/DCS/GPRS Mobile Phones LTC1957 RF Power Controller Multiband GSM/DCS/GPRS Mobile Phones LTC4400 SOT-23 RF PA Controller Multiband GSM/DCS/GPRS Phones, 45dB Dynamic Range, 450kHz Loop BW LTC4401 SOT-23 RF PA Controller Multiband GSM/DCS/GPRS Phones, 45dB Dynamic Range, 250kHz Loop BW LTC4403 RF Power Controller for EDGE/TDMA Multiband GSM/GPRS/EDGE Mobile Phones