LMU60R840A LEIDITECH
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
- VDS 600V
- ID 5A
- RDS(ON)(atVGS=10V) ＜840mohm
- 100%UISTested
- 100%▽VDSTested General Description
- Multi-EPISuperJunction MOSFET technology
- Excellentpackageforheatdissipation
- HighdensitycelldesignforlowRDS(ON)
Applications
- Power factorcorrection(PFC)
- Switchedmodepowersupplies(SMPS)
- UninterruptiblePowerSupply(UPS) ■Absolute Maximum Ratings (TA=25℃unlessotherwisenoted) Parameter Symbol Limit Unit Drain-sourceVoltage VDS 600 V Gate-sourceVoltage VGS ±30 V DrainCurrent TC=25℃ ID A TC=100℃ 3 PulsedDrainCurrentA IDM 45 A Avalancheenergy,SinglepulseB EAS 624 mJ Avalancheenergy,repetitive EAR 150 mJ MOSFETdv/dtruggedness dv/dt 11 V/ns Reversediodedv/dt,VDS=0…480V,ISD≤ID dv/dt 15 V/ns TotalPowerDissipation TC=25℃ PD W TC=100℃ 28 ThermalResistanceJunction-to-Case RθJC 1.06 ℃/ W JunctionandStorageTemperatureRange TJ ,TSTG -55～+150 ℃ ■Ordering Information PREFERED P/N PACKING CODE Marking MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE LMU60R840A YJU60R840A 75 4950 29700 Tube N-Channel Super Junction Power MOSFET LMU60R840A Rev : www.leiditech.com 01.06.2018 1/4
■Electrical Characteristics (TJ=25℃ unlessotherwisenoted) Parameter Symbol Conditions Min Typ Max Units Static Parameter Drain-SourceBreakdownVoltage BVDSS VGS=0V,ID=1mA 600 V ZeroGateVoltageDrainCurrent IDSS VDS=600V,VGS=0V 0.1 μA Gate-BodyLeakageCurrent IGSS VGS=±30V,VDS=0V ±100 nA GateThresholdVoltage VGS(th) VDS=VGS,ID=250μA 2.8 4.2 V StaticDrain-SourceOn-Resistance RDS(ON) VGS=10V,ID=2.5A 750 840 mΩ DiodeForwardVoltage VSD IS=3.8A,VGS=0V 0.81 V MaximumBody-DiodeContinuousCurrent IS 8 A Gateresstance(Intrinsic) RG F=1MHz,opendrain 12.1 Ω Dynamic Parameters InputCapacitance Ciss VDS=50V,VGS=0V,f=10KHZ 550 pFOutputCapacitance Coss 39 ReverseTransferCapacitance Crss 2.8 Switching Parameters TotalGateCharge Qg VGS=13V,VDS=400V,ID=2.5A 2.0 nC Gate-SourceCharge Qgs 2.6 Gate-DrainCharge Qgd 10.7 ReverseRecoveryChrage Qrr VR=400A,IF=2.2A,di/dt=100A/us 880 Peakreverserecoverycurrent Irrm 10 A ReverseRecoveryTime trr 125 ns Turn-onDelayTime tD(on) VDD=400V,RG=10Ω,ID=2.5A Turn-onRiseTime tr 31 Turn-offDelayTime tD(off) 41 Turn-offfallTime tf 29 LMU60R840A Rev : www.leiditech.com 01.06.2018 2/4
■Test Circuits Diode characteristics Switching times Unclamped inductive load LMU60R840A Rev : www.leiditech.com 01.06.2018 3/4
■TO-251 Package information LMU60R840A Shanghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev : www.leiditech.com 01.06.2018 4/4