LMR64010 SIMPLE SWITCHER ® 40Vout, 1A Step-Up Voltage Regulator in SOT-23 datasheet (Rev. B)

Document overview

  • Manufacturer or author: Texas Instruments, Incorporated [SNVS736,B]
  • PDF pages: 23

Technical content

www.ti.com SNVS736B –SEPTEMBER 2011–REVISED APRIL 2013 LMR64010SIMPLESWITCHER® 40Vout,1AStep-UpVoltageRegulatorinSOT-23 Check forSamples: LMR64010 1FEATURES DESCRIPTION The LMR64010 switchingregulatorsis a current- 2• InputVoltageRange of2.7Vto14V mode boostconverteroperatingata fixedfrequency• Output Voltageup to40V of1.6MHz.

  • Switch Currentup to1A The use of SOT-23 package,made possibleby the• 1.6MHz SwitchingFrequency minimalpower lossoftheinternal1A switch,and use
  • Low Shutdown Iq,<1 µA of small inductorsand capacitorsresultin the industry'shighestpower density.The 40V internal• Cycle-by-CycleCurrentLimiting switchmakes thesesolutionsperfectforboostingto• InternallyCompensated voltagesof16V orgreater.
  • SOT-23-5 Packaging (2.92x 2.84x 1.08mm) These partshave a logic-levelshutdown pinthatcan• FullyEnabled forWEBENCH ® Power Designer be used to reduce quiescentcurrentand extend batterylife. PERFORMANCE BENEFITS Protectionisprovidedthroughcycle-by-cyclecurrent
  • ExtremelyEasy toUse limitingand thermalshutdown.Internalcompensation simplifiesdesignand reducescomponent count.• TinyOverallSolutionReduces System Cost

APPLICATIONS

  • Boost Conversions from 3.3V,5V,and 12V Rails
  • Space ConstrainedApplications
  • Embedded Systems
  • LCD Displays
  • LED Applications System Performance Pleasebe aware thatan importantnoticeconcerningavailability,standardwarranty,and use incriticalapplicationsof Texas Instrumentssemiconductorproductsand disclaimerstheretoappearsattheend ofthisdatasheet. 2Alltrademarksarethepropertyoftheirrespectiveowners. PRODUCTION DATA informationiscurrentas ofpublicationdate. Copyright© 2011–2013,Texas InstrumentsIncorporatedProductsconform to specificationsper the terms of the Texas Instrumentsstandardwarranty.Productionprocessingdoes not necessarilyincludetestingofallparameters.

2.2 PF L1/10 PH 13.3k CF 120 pF R1/205k 4.7 PF 20V OUT 170 mA (TYP) LMR64010 SNVS736B –SEPTEMBER 2011–REVISED APRIL 2013 www.ti.com Top View Figure1. 5-Lead SOT-23 Package See Package Number DBV0005A PIN DESCRIPTIONS Pin Name Function 1 SW DrainoftheinternalFET switch. 2 GND Analogand power ground. 3 FB Feedback pointthatconnectstoexternalresistivedivider. 4 SHDN Shutdown controlinput.ConnecttoVIN ifthisfeatureisnotused. 5 VIN Analogand power input.

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formula: Ifpower dissipationexceedsthemaximum specifiedabove,theinternalthermalprotection LMR64010 www.ti.com SNVS736B –SEPTEMBER 2011–REVISED APRIL 2013 These deviceshave limitedbuilt-inESD protection.The leadsshouldbe shortedtogetherorthedeviceplacedinconductivefoam duringstorageorhandlingtopreventelectrostaticdamage totheMOS gates. AbsoluteMaximum Ratings(1)(2) StorageTemperatureRange −65°C to+150°C OperatingJunction TemperatureRange −40°C to+125°C Lead Temp. (Soldering,5 sec.) 300°C Power Dissipation(3) InternallyLimited FB PinVoltage −0.4Vto+6V SW PinVoltage −0.4Vto+40V InputSupplyVoltage −0.4Vto+14.5V SHDN PinVoltage −0.4VtoVIN + 0.3V θJ-A (SOT-23-5) 265°C/W ESD Rating(4) Human Body Model 2 kV Machine Model 200V Forsolderingspecifications:http://www.ti.com/lit/SNOA549 (1) AbsoluteMaximum Ratingsindicatelimitsbeyond whichdamage tothecomponent may occur.Electricalspecificationsdo notapply when operatingthedeviceoutsideofthelimitssetforthundertheoperatingratingswhichspecifytheintendedrangeofoperating conditions. (2) IfMilitary/Aerospacespecifieddevicesarerequired,pleasecontacttheTexas InstrumentsSalesOffice/Distributorsforavailabilityand specifications. (3) The maximum power dissipationwhichcan be safelydissipatedforany applicationisa functionofthemaximum junctiontemperature, TJ(MAX) = 125°C, thejunction-to-ambientthermalresistancefortheSOT-23 package,θJ-A = 265°C/W, and theambienttemperature, TA.The maximum allowablepower dissipationatany ambienttemperaturefordesignsusingthisdevicecan be calculatedusingthe circuitrywillprotectthedeviceby reducingtheoutputvoltageas requiredtomaintaina safejunctiontemperature. (4) The human body model isa 100 pF capacitordischargedthrougha 1.5kΩ resistorintoeach pin.The machine model isa 200 pF capacitordischargeddirectlyintoeach pin. Copyright© 2011–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 3 ProductFolderLinks:LMR64010

SNVS736B –SEPTEMBER 2011–REVISED APRIL 2013 www.ti.com ElectricalCharacteristics LimitsinstandardtypefaceareforTJ = 25°C, and limitsinboldfacetypeapplyoverthefulloperatingtemperaturerange (−40°C ≤ TJ ≤ +125°C).Unlessotherwisespecified:VIN = 5V,VSHDN = 5V,IL = 0A. Parameter TestConditions Min (1) Typ (2) Max (1) Units VIN InputVoltage 2.7 14 V ISW SwitchCurrentLimit See (3) 1.0 1.5 A R DS (ON) SwitchON Resistance ISW = 100 mA 500 650 m Ω SHDN TH Shutdown Threshold DeviceON 1.5 V DeviceOFF 0.50 ISHDN Shutdown PinBiasCurrent VSHDN = 0 0 µA VSHDN = 5V 0 2 VFB Feedback PinReferenceVoltage VIN = 3V 1.205 1.230 1.255 V IFB Feedback PinBiasCurrent VFB = 1.23V 60 nA IQ QuiescentCurrent VSHDN = 5V,Switching 2.1 3.0 mA VSHDN = 5V,Not Switching 400 500 µA VSHDN = 0 0.024 1 ΔVFB FB VoltageLineRegulation 2.7V≤ VIN ≤ 14V 0.02 %/VΔV IN FSW SwitchingFrequency 1.15 1.6 1.85 MHz D MAX Maximum DutyCycle 87 93 % IL SwitchLeakage Not SwitchingVSW = 5V 1 µA (1) Limitsareensureddby testing,statisticalcorrelation,ordesign. (2) Typicalvaluesarederivedfromthemean valueofa largequantityofsamplestestedduringcharacterizationand representthemost likelyexpectedvalueoftheparameteratroom temperature. (3) Switchcurrentlimitisdependenton dutycycle(seeTypicalPerformanceCharacteristics).Limitsshown arefordutycycles≤ 50%.

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-40 -25 0 25 50 75 100 125 TEMPERATURE ( oC) 92.7 92.8 92.9 93.0 93.1 93.2 93.3 93.4 MAX DUTY CYCLE (%) LMR64010 www.ti.com SNVS736B –SEPTEMBER 2011–REVISED APRIL 2013 TypicalPerformance Characteristics Unlessotherwisespecified:VIN = 5V,SHDN pinistiedtoVIN. IqVIN (Active)vs Temperature OscillatorFrequency vs Temperature Figure2. Figure3. Max. Duty Cycle vs Temperature Feedback Voltagevs Temperature Figure4. Figure5. R DS (ON) vs Temperature CurrentLimitvs Temperature Figure6. Figure7. Copyright© 2011–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 5 ProductFolderLinks:LMR64010

0 50 100 150 200 250 300 350 100 VIN = 10V VIN = 5V LOAD CURRENT (mA) EFFICIENCY (%) 0 50 100 150 200 250 300 350 400 100 VIN = 10V VIN = 5V LOAD CURRENT (mA) EFFICIENCY (%) 0 100 200 300 400 500 600 700 100 VIN = 10V VIN = 5V VIN = 3.3V LOAD CURRENT (mA) EFFICIENCY (%) LOAD CURRENT (mA) EFFICIENCY (%) 0 200 400 600 800 1000 100 VIN = 10V VIN = 5V VIN = 3.3V LMR64010 SNVS736B –SEPTEMBER 2011–REVISED APRIL 2013 www.ti.com TypicalPerformance Characteristics(continued) Unlessotherwisespecified:VIN = 5V,SHDN pinistiedtoVIN. R DS(ON) vs VIN Efficiencyvs Load Current(VOUT = 12V) Figure8. Figure9. Efficiencyvs Load Current(VOUT = 15V) Efficiencyvs Load Current(VOUT = 20V) Figure10. Figure11. Efficiencyvs Load Current(VOUT = 25V) Efficiencyvs Load Current(VOUT = 30V) Figure12. Figure13.

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VIN = 10V LOAD CURRENT (mA) EFFICIENCY (%) 0 50 100 150 200 LOAD CURRENT (mA) EFFICIENCY (%) VIN=10V LMR64010 www.ti.com SNVS736B –SEPTEMBER 2011–REVISED APRIL 2013 TypicalPerformance Characteristics(continued) Unlessotherwisespecified:VIN = 5V,SHDN pinistiedtoVIN. Efficiencyvs Load Current(VOUT = 35V) Efficiencyvs Load Current(VOUT = 40V) Figure14. Figure15. Block Diagram Copyright© 2011–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 7 ProductFolderLinks:LMR64010

SNVS736B –SEPTEMBER 2011–REVISED APRIL 2013 www.ti.com

APPLICATION INFORMATION

The LMR64010 isa switchingconverterIC thatoperatesat a fixedfrequency(1.6MHz) usingcurrent-mode controlforfasttransientresponse over a wide inputvoltagerange and incorporatespulse-by-pulsecurrent limitingprotection.Because thisiscurrentmode control,a 50 m Ω sense resistorinserieswiththeswitchFET is used to providea voltage(whichis proportionalto the FET current)to both the inputof the pulse width modulation(PWM) comparatorand thecurrentlimitamplifier. At the beginningof each cycle,the S-R latchturnson the FET. As the currentthroughthe FET increases,a voltage(proportionaltothiscurrent)issummed withtheramp coming fromtheramp generatorand thenfedinto theinputofthePWM comparator.When thisvoltageexceeds thevoltageon theotherinput(comingfrom the Gm amplifier),thelatchresetsand turnstheFET off.Sincethesignalcoming from theGm amplifierisderived fromthefeedback(whichsamples thevoltageattheoutput),theactionofthePWM comparatorconstantlysets thecorrectpeak currentthroughtheFET tokeep theoutputvolatgeinregulation. Q1 and Q2 alongwithR3 -R6 forma bandgap voltagereferenceused by theIC toholdtheoutputinregulation. The currentsflowingthroughQ1 and Q2 willbe equal,and thefeedbackloopwilladjusttheregulatedoutputto maintainthis.Because ofthis,theregulatedoutputisalwaysmaintainedata voltagelevelequaltothevoltageat theFB node "multipliedup"by theratiooftheoutputresistivedivider. The currentlimitcomparatorfeedsdirectlyintotheflip-flop,thatdrivestheswitchFET. IftheFET currentreaches the limitthreshold,the FET isturnedoffand the cycleterminateduntilthe nextclockpulse.The currentlimit inputterminatesthepulseregardlessofthestatusoftheoutputofthePWM comparator. ApplicationHints SELECTING THE EXTERNAL CAPACITORS The bestcapacitorsforuse withtheLMR64010 are multi-layerceramiccapacitors.They have thelowestESR (equivalentseriesresistance)and highestresonancefrequencywhich makes them optimum foruse withhigh frequencyswitchingconverters. When selectinga ceramiccapacitor,onlyX5R and X7R dielectrictypesshouldbe used.Other typessuch as Z5U and Y5F have such severelossofcapacitancedue toeffectsoftemperaturevariationand appliedvoltage, theymay provideas littleas 20% of ratedcapacitanceinmany typicalapplications.Always consultcapacitor manufacturer’s datacurvesbeforeselectinga capacitor. SELECTING THE OUTPUT CAPACITOR A singleceramic capacitorof value 4.7 µF to 10 µF willprovidesufficientoutputcapacitanceformost applications.For outputvoltagesbelow 10V, a 10 µF capacitanceisrequired.Iflargeramounts ofcapacitance aredesiredforimprovedlinesupportand transientresponse,tantalumcapacitorscan be used inparallelwiththe ceramics.Aluminum electrolyticswithultralow ESR such as Sanyo Oscon can be used, but are usually prohibitivelyexpensive.TypicalAI electrolyticcapacitorsare not suitableforswitchingfrequenciesabove 500 kHz due tosignificantringingand temperaturerisedue toself-heatingfrom ripplecurrent.An outputcapacitor withexcessiveESR can alsoreducephase marginand cause instability. SELECTING THE INPUT CAPACITOR An inputcapacitorisrequiredtoserveas an energyreservoirforthecurrentwhichmust flowintothecoileach time the switchturnsON. This capacitormust have extremelylow ESR, so ceramicisthe best choice.We recommend a nominalvalueof2.2µF,butlargervaluescan be used.Sincethiscapacitorreducestheamount of voltagerippleseen at the inputpin,italsoreducesthe amount of EMI passed back alongthatlineto other circuitry.

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www.ti.com SNVS736B –SEPTEMBER 2011–REVISED APRIL 2013 FEED-FORWARD COMPENSATION Althoughinternallycompensated,the feed-forwardcapacitorCf isrequiredforstability(see BasicApplication Circuit).Addingthiscapacitorputsa zerointheloopresponseoftheconverter.Withoutit,theregulatorloopcan oscillate.The recommended frequencyforthezerofzshouldbe approximately8 kHz.Cf can be calculatedusing theformula: Cf = 1 /(2X π X R1 X fz) (1) SELECTING DIODES The externaldiodeused inthetypicalapplicationshouldbe a Schottkydiode.Iftheswitchvoltageislessthan 15V, a 20V diodesuch as theMBR0520 isrecommended. Iftheswitchvoltageisbetween 15V and 25V, a 30V diodesuch as the MBR0530 isrecommended. Ifthe switchvoltageexceeds 25V, a 40V diodesuch as the MBR0540 shouldbe used. The MBR05XX seriesofdiodesare designedtohandlea maximum averagecurrentof0.5A.For applications exceeding0.5Aaveragebutlessthan1A,a ToshibaCRS08 can be used. LAYOUT HINTS High frequencyswitchingregulatorsrequireverycarefullayoutofcomponents inordertogetstableoperation and low noise.Allcomponents must be as closeas possibletotheLMR64010 device.Itisrecommended thata 4-layerPCB be used so thatinternalgroundplanesareavailable. As an example,a recommended layoutofcomponents isshown: Figure16. Recommended PCB Component Layout Some additionalguidelinestobe observed: 1. Keep thepathbetween L1,D1, and C2 extremelyshort.ParasitictraceinductanceinserieswithD1 and C2 willincreasenoiseand ringing. 2. The feedbackcomponents R1, R2 and CF must be keptclosetotheFB pinofU1 topreventnoiseinjection on theFB pintrace. 3. Ifinternalgroundplanesareavailable(recommended) use viastoconnectdirectlytogroundatpin2 ofU1, as wellas thenegativesidesofcapacitorsC1 and C2. Copyright© 2011–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 9 ProductFolderLinks:LMR64010

Duty Cycle = VOUT + VDIODE - VIN VOUT + VDIODE - VSW LMR64010 SNVS736B –SEPTEMBER 2011–REVISED APRIL 2013 www.ti.com SETTING THE OUTPUT VOLTAGE The outputvoltageisset usingthe externalresistorsR1 and R2 (see Basic ApplicationCircuit).A valueof approximately13.3 kΩ isrecommended forR2 to establisha dividercurrentof approximately92 µA. R1 is calculatedusingtheformula: Figure17. Basic ApplicationCircuit DUTY CYCLE The maximum duty cycleof the switchingregulatordeterminesthe maximum boost ratioof output-to-input voltagethatthe convertercan attainin continuousmode of operation.The duty cyclefora given boost applicationisdefinedas: (3) Thisappliesforcontinuousmode operation. The equationshown forcalculatingdutycycleincorporatestermsfortheFET switchvoltageand diodeforward voltage.The actualdutycyclemeasured inoperationwillalsobe affectedslightlyby otherpower lossesinthe circuitsuch as wirelossesintheinductor,switchinglosses,and capacitorripplecurrentlossesfromself-heating. Therefore,theactual(effective)dutycyclemeasured may be slightlyhigherthancalculatedtocompensate for thesepower losses.A good approximationforeffctivedutycycleis: DC (eff)= (1-Efficiencyx (VIN/VOUT )) where

  • theefficiencycan be approximatedfromthecurvesprovided. (4) INDUCTANCE VALUE The firstquestionwe are usuallyasked is:“How smallcan Imake theinductor?” (becausetheyare thelargest sizedcomponent and usuallythemost costly).The answer isnotsimpleand involvestradeoffsinperformance. Largerinductorsmean lessinductorripplecurrent,which typicallymeans lessoutputvoltageripple(fora given sizeof outputcapacitor).Largerinductorsalsomean more loadpower can be deliveredbecause the energy storedduringeach switchingcycleis: E =L/2X (lp)2 where
  • “lp”isthepeak inductorcurrent. (5)

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2.2 PF R2

13.3k CF 220 pF MBR0520 R1/117K L1/10 PH 4.7 PF 12V OUT 330 mA (TYP) LMR64010 www.ti.com SNVS736B –SEPTEMBER 2011–REVISED APRIL 2013 An importantpointto observeisthatthe LMR64010 willlimititsswitchcurrentbased on peak current.This means thatsincelp(max)isfixed,increasingL willincreasethemaximum amount ofpower availabletotheload. Conversely,usingtoolittleinductancemay limittheamount ofloadcurrentwhichcan be drawn fromtheoutput. Best performanceisusuallyobtainedwhen theconverterisoperatedin“continuous” mode attheloadcurrent rangeofinterest,typicallygivingbetterloadregulationand lessoutputripple.Continuousoperationisdefinedas notallowingtheinductorcurrenttodroptozeroduringthecycle.Itshouldbe notedthatallboostconvertersshift overtodiscontinuousoperationas theoutputloadisreducedfarenough,buta largerinductorstays“continuous” overa widerloadcurrentrange. To betterunderstandthesetradeoffs,a typicalapplicationcircuit(5V to12V boostwitha 10 µH inductor)willbe analyzed.We willassume: VIN = 5V,VOUT = 12V,VDIODE = 0.5V,VSW = 0.5V Sincethefrequencyis1.6MHz (nominal),theperiodisapproximately0.625µs.The dutycyclewillbe 62.5%, whichmeans theON timeoftheswitchis0.390µs.Itshouldbe notedthatwhen theswitchisON, thevoltage acrosstheinductorisapproximately4.5V. Usingtheequation: V = L (di/dt) (6) We can thencalculatethedi/dtrateoftheinductorwhich isfoundtobe 0.45A/µs duringtheON time.Using thesefacts,we can thenshow what theinductorcurrentwilllooklikeduringoperation: Figure18. 10 µH InductorCurrent,5V–12V Boost Duringthe0.390µs ON time,theinductorcurrentramps up 0.176Aand ramps down an equalamount duringthe OFF time.Thisisdefinedas theinductor“ripplecurrent”.Itcan alsobe seen thatiftheloadcurrentdropsto about33 mA, theinductorcurrentwillbegintouchingthezeroaxiswhichmeans itwillbe indiscontinuousmode. A similaranalysiscan be performedon any boostconverter,tomake suretheripplecurrentisreasonableand continuousoperationwillbe maintainedatthetypicalloadcurrentvalues. Figure19. TypicalApplication,5V–12V Boost Copyright© 2011–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 11 ProductFolderLinks:LMR64010

ILOAD (max) = (1 - DC) x (ISW (max) - DC (VIN - VSW )) 2fL 0 20 40 60 80 100 200 400 600 800 1000 1200 1400 1600 SWITCH CURRENT LIMIT (mA) DUTY CYCLE (%) = [1 - EFF*(VIN/VOUT))] VIN = 5V VIN = 3.3V VIN = 2.7V LMR64010 SNVS736B –SEPTEMBER 2011–REVISED APRIL 2013 www.ti.com MAXIMUM SWITCH CURRENT The maximum FET swtch currentavailablebeforethecurrentlimitercutsinisdependenton dutycycleofthe application.Thisisillustratedinthe graphs below which show both the typicaland specifiedvaluesof switch currentas a functionofeffective(actual)dutycycle: Figure20. Switch CurrentLimitvs Duty Cycle CALCULATING LOAD CURRENT As shown inthefigurewhichdepictsinductorcurrent,theloadcurrentisrelatedtotheaverageinductorcurrent by therelation: ILOAD = IIND(AVG) x (1-DC) where

  • "DC" isthedutycycleoftheapplication. (7) ISW = IIND(AVG) + ½ (IRIPPLE ) (8) Inductorripplecurrentisdependenton inductance,dutycycle,inputvoltageand frequency: IRIPPLE = DC x (VIN-VSW )/(fx L) (9) combiningallterms,we can developan expressionwhich allowsthe maximum availableload currentto be calculated: (10)

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www.ti.com SNVS736B –SEPTEMBER 2011–REVISED APRIL 2013 The equationshown tocalculatemaximum loadcurrenttakesintoaccountthelossesintheinductororturn-OFF switchinglossesof the FET and diode.For actualloadcurrentintypicalapplications,we tookbench data for variousinputand outputvoltagesand displayedthemaximum loadcurrentavailablefora typicaldeviceingraph form: Figure21. Max. Load Currentvs VIN DESIGN PARAMETERS VSW AND ISW The valueoftheFET "ON" voltage(referredtoas VSW intheequations)isdependenton loadcurrent.A good approximationcan be obtainedby multiplyingthe "ON Resistance"of the FET times the average inductor current. FET on resistanceincreasesatVIN valuesbelow 5V, sincetheinternalN-FET has lessgatevoltageinthisinput voltagerange (see TypicalPerformance Characteristicscurves).Above VIN = 5V, the FET gate voltageis internallyclamped to5V. The maximum peak switchcurrentthe devicecan deliverisdependent on dutycycle.The minimum valueis specifiedtobe > 1A atdutycyclebelow 50%. For higherdutycycles,see TypicalPerformanceCharacteristics curves. THERMAL CONSIDERATIONS At higherdutycycles,theincreasedON timeoftheFET means themaximum outputcurrentwillbe determined by power dissipationwithintheLMR64010 FET switch.The switchpower dissipationfromON-stateconductionis calculatedby: P(SW) = DC x IIND(AVE)2 x R DS ON (11) There willbe some switchinglossesas well,so some deratingneeds tobe appliedwhen calculatingIC power dissipation. Copyright© 2011–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 13 ProductFolderLinks:LMR64010

SNVS736B –SEPTEMBER 2011–REVISED APRIL 2013 www.ti.com MINIMUM INDUCTANCE In some applicationswhere the maximum loadcurrentisrelativelysmall,itmay be advantageousto use the smallestpossibleinductancevalueforcostand sizesavings.The converterwilloperateindiscontinuousmode in such a case. The minimum inductanceshouldbe selectedsuch thattheinductor(switch)currentpeak on each cycledoes not reachthe1A currentlimitmaximum. To understandhow todo this,an example willbe presented. Intheexample,minimum switchingfrequencyof1.15MHz willbe used.Thismeans themaximum cycleperiod isthereciprocaloftheminimum frequency: TON(max) = 1/1.15M= 0.870µs (12) We willassume theinputvoltageis5V,VOUT = 12V,VSW = 0.2V,VDIODE = 0.3V.The dutycycleis: DutyCycle= 60.3% Therefore,themaximum switchON timeis0.524µs.An inductorshouldbe selectedwithenough inductanceto preventtheswitchcurrentfromreaching1A inthe0.524µs ON timeinterval(seebelow): Figure22. DiscontinuousDesign,5V–12V Boost The voltageacrosstheinductorduringON timeis4.8V.Minimum inductancevalueisfoundby: V = L X dl/dt,L = V X (dt/dl)= 4.8(0.524µ/1)= 2.5µH (13) Inthiscase,a 2.7µH inductorcouldbe used assuming itprovidedatleastthatmuch inductanceup tothe1A currentvalue.Thissame analysiscan be used tofindtheminimum inductanceforany boostapplication. When selectingan inductor,make certainthatthecontinuouscurrentratingishighenough toavoidsaturationat peak currents.A suitablecore typemust be used to minimizecore (switching)losses,and wirepower losses must be consideredwhen selectingthecurrentrating. SHUTDOWN PIN OPERATION The deviceisturnedoffby pullingtheshutdownpinlow.Ifthisfunctionisnotgoingtobe used,thepinshouldbe tieddirectlytoVIN.IftheSHDN functionwillbe needed,a pull-upresistormust be used toVIN (approximately 50k-100kΩ recommended).The SHDN pinmust notbe leftunterminated.

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REVISION HISTORY

Changes from RevisionA (April2013)toRevisionB Page Copyright© 2011–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 15 ProductFolderLinks:LMR64010

www.ti.com 11-Nov-2025 PACKAGING INFORMATION Orderable part number Status (1) Material type (2) Package | Pins Package qty | Carrier RoHS (3) Lead finish/ Ball material (4) MSL rating/ Peak reflow (5) Op temp (°C) Part marking (6) LMR64010XMF/NOPB Active Production SOT-23 (DBV) | 5 1000 | SMALL T&R Yes SN Level-1-260C-UNLIM -40 to 125 SF9B LMR64010XMF/NOPB.A Active Production SOT-23 (DBV) | 5 1000 | SMALL T&R Yes SN Level-1-260C-UNLIM -40 to 125 SF9B LMR64010XMF/NOPB.B Active Production SOT-23 (DBV) | 5 1000 | SMALL T&R Yes SN Level-1-260C-UNLIM -40 to 125 SF9B LMR64010XMFE/NOPB Active Production SOT-23 (DBV) | 5 250 | SMALL T&R Yes SN Level-1-260C-UNLIM -40 to 125 SF9B LMR64010XMFE/NOPB.A Active Production SOT-23 (DBV) | 5 250 | SMALL T&R Yes SN Level-1-260C-UNLIM -40 to 125 SF9B LMR64010XMFE/NOPB.B Active Production SOT-23 (DBV) | 5 250 | SMALL T&R Yes SN Level-1-260C-UNLIM -40 to 125 SF9B LMR64010XMFX/NOPB Active Production SOT-23 (DBV) | 5 3000 | LARGE T&R Yes SN Level-1-260C-UNLIM -40 to 125 SF9B LMR64010XMFX/NOPB.A Active Production SOT-23 (DBV) | 5 3000 | LARGE T&R Yes SN Level-1-260C-UNLIM -40 to 125 SF9B LMR64010XMFX/NOPB.B Active Production SOT-23 (DBV) | 5 3000 | LARGE T&R Yes SN Level-1-260C-UNLIM -40 to 125 SF9B (1) Status: For more details on status, see our product life cycle. (2) Material type: When designated, preproduction parts are prototypes/experimental devices, and are not yet approved or released for full production. Testing and final process, including without limitation quality assurance, reliability performance testing, and/or process qualification, may not yet be complete, and this item is subject to further changes or possible discontinuation. If available for ordering, purchases will be subject to an additional waiver at checkout, and are intended for early internal evaluation purposes only. These items are sold without warranties of any kind. (3) RoHS values: Yes, No, RoHS Exempt. See the TI RoHS Statement for additional information and value definition. (4) Lead finish/Ball material: Parts may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two lines if the finish value exceeds the maximum column width. (5) MSL rating/Peak reflow: The moisture sensitivity level ratings and peak solder (reflow) temperatures. In the event that a part has multiple moisture sensitivity ratings, only the lowest level per JEDEC standards is shown. Refer to the shipping label for the actual reflow temperature that will be used to mount the part to the printed circuit board. (6) Part marking: There may be an additional marking, which relates to the logo, the lot trace code information, or the environmental category of the part. Multiple part markings will be inside parentheses. Only one part marking contained in parentheses and separated by a "~" will appear on a part. If a line is indented then it is a continuation of the previous line and the two combined represent the entire part marking for that device. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative Addendum-Page 1

www.ti.com 11-Nov-2025 and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 2

PACKAGE MATERIALS INFORMATION www.ti.com 6-Sep-2025 TAPE AND REEL INFORMATION Reel Width (W1) REEL DIMENSIONS A0B0K0WDimension designed to accommodate the component lengthDimension designed to accommodate the component thicknessOverall width of the carrier tapePitch between successive cavity centersDimension designed to accommodate the component width TAPE DIMENSIONSK0 P1B0WA0Cavity QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE Pocket QuadrantsSprocket HolesQ1Q1Q2Q2Q3Q3Q4Q4User Direction of Feed P1ReelDiameter *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Reel Diameter (mm) Reel Width W1 (mm) (mm) (mm) (mm) (mm) W (mm) Pin1 Quadrant Pack Materials-Page 1

PACKAGE MATERIALS INFORMATION www.ti.com 6-Sep-2025 TAPE AND REEL BOX DIMENSIONS Width (mm) W LH *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LMR64010XMF/NOPB SOT-23 DBV 5 1000 208.0 191.0 35.0 LMR64010XMFE/NOPB SOT-23 DBV 5 250 208.0 191.0 35.0 LMR64010XMFX/NOPB SOT-23 DBV 5 3000 208.0 191.0 35.0 Pack Materials-Page 2

www.ti.com PACKAGE OUTLINE C 0.22

0.08 TYP

0.25 3.0 2.6 2X 0.95 1.9 1.45 0.90 0.15

0.00 TYP

5X 0.5 0.3 0.6

0.3 TYP

0 TYP

1.9 (0.1) (0.15) 4X 0 -15 4X 4 -15 A 3.05 2.75 B1.75 1.45 (1.1) SOT-23 - 1.45 mm max heightDBV0005A SMALL OUTLINE TRANSISTOR 4214839/K 08/2024 NOTES: 1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing per ASME Y14.5M. 2. This drawing is subject to change without notice. 3. Refernce JEDEC MO-178. 4. Body dimensions do not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not exceed 0.25 mm per side. 5. Support pin may differ or may not be present.

0.2 C A B

0.1 C SCALE 4.000

www.ti.com EXAMPLE BOARD LAYOUT

0.07 MAX

0.07 MIN

5X (1.1) 5X (0.6) (2.6) (1.9) 2X (0.95) (R0.05) TYP 4214839/K 08/2024 SOT-23 - 1.45 mm max heightDBV0005A SMALL OUTLINE TRANSISTOR NOTES: (continued) 6. Publication IPC-7351 may have alternate designs. 7. Solder mask tolerances between and around signal pads can vary based on board fabrication site. SYMM LAND PATTERN EXAMPLE EXPOSED METAL SHOWN SCALE:15X PKG 3 4 SOLDER MASK OPENING METAL UNDER SOLDER MASK SOLDER MASK DEFINED EXPOSED METAL METALSOLDER MASK OPENING NON SOLDER MASK DEFINED (PREFERRED) SOLDER MASK DETAILS EXPOSED METAL

www.ti.com EXAMPLE STENCIL DESIGN (2.6) (1.9) 2X(0.95) 5X (1.1) 5X (0.6) (R0.05) TYP SOT-23 - 1.45 mm max heightDBV0005A SMALL OUTLINE TRANSISTOR 4214839/K 08/2024 NOTES: (continued) 8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate design recommendations. 9. Board assembly site may have different recommendations for stencil design. SOLDER PASTE EXAMPLE BASED ON 0.125 mm THICK STENCIL SCALE:15X SYMM PKG 3 4

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