LMQ40P03A LEIDITECH

Document overview

  • Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

  • VDS -30V
  • ID -40A
  • RDS(ON)( at VGS=-20V) ＜13 mohm
  • RDS(ON)( at VGS=-10V) ＜15 mohm
  • RDS(ON)( at VGS=-4.5V) ＜25 mohm General Description
  • Trench Power LV MOSFET technology
  • High density cell design for Low RDS(ON)
  • High Speed switching

Applications

  • Battery management
  • Load switch
  • Power management ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Maximum Unit Drain-source Voltage VDS -30 V Gate-source Voltage VGS ±25 V Drain Current TA=25℃ @ Steady State ID -40 A TA=70℃ @ Steady State -33 Pulsed Drain Current A IDM -160 A Single Pulse Avalanche Energy @L=0.5mH B EAS 72 mJ Total Power Dissipation @ TA=25℃ C PD 32 W Thermal Resistance Junction-to-Ambient @ Steady State D RθJA 4.0 ℃/ W Junction and Storage Temperature Range TJ ,TSTG -55～+150 ℃ ■ Ordering Information (Example) PREFERED P/N PACKING CODE Marking MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE LMQ40P03A F1 Q40P03 5000 13“ reel LMQ40P03A Enhancement Mode Field Effect Transistor P-Channel Rev : www.leiditech.com 01.06.2018 1/5

■ Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Static Parameter Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=-250μA -30 V Zero Gate Voltage Drain Current IDSS VDS=-30V,VGS=0V,TC=25℃ -1 μA Gate-Body Leakage Current IGSS VGS= ±25V, VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS= VGS, ID=-250μA -1.2 -1.8 -2.8 V Static Drain-Source On-Resistance RDS(ON) VGS= -20V, ID=-20A 8.6 13 mΩ VGS= -10V, ID=-15A 9.8 15 VGS= -6.0V, ID=-12A 12.1 22 VGS= -4.5V, ID=-12A 15.5 25 Diode Forward Voltage VSD IS=-20A,VGS=0V -1.2 V Maximum Body-Diode Continuous Current IS -40 A Dynamic Parameters Input Capacitance Ciss VDS=-15V,VGS=0V,f=1MHZ 2050 pF Output Capacitance Coss 355 Reverse Transfer Capacitance Crss 301 Switching Parameters Total Gate Charge Qg VGS=-10V,VDS=-15V,ID=-20A 29.8 nC Gate Source Charge Qgs 4.7 Gate Drain Charge Qgd 10 Turn-on Delay Time tD(on) VGS=-10V,VDD=-15V, ID=-1A, RGEN=2.5Ω ns Turn-on Rise Time tr 12 Turn-off Delay Time tD(off) 26 Turn-off Fall Time tf 10 A. Pulse Test: Pulse Width≤300us,Duty cycle ≤2%. B. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150℃. Ratings are based on low frequency and duty cycles to keep Initial TJ=25℃. C. The power dissipation PD is based on TJ(MAX)=150℃, using ≤ 10s junction-to-ambient thermal resistance. D. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25℃. The value in any given application depends on the user's specific board design. LMQ40P03A Rev : www.leiditech.com 01.06.2018 2/5

■ Typical Performance Characteristics Figure1. Output Characteristics Figure2. Transfer Characteristics Figure3. Capacitance Characteristics Figure4. Gate Charge Figure5. Drain-Source on Resistance Figure6. Drain-Source on Resistance LMQ40P03A Rev : www.leiditech.com 01.06.2018 3/5

Figure7. Safe Operation Area Figure8. Switching wave LMQ40P03A Rev : www.leiditech.com 01.06.2018 4/5

■ DFN3.3×3.3 Package information LMQ40P03A Shanghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev : www.leiditech.com 01.06.2018 5/5