LMQ30N03A LEIDITECH

Document overview

  • Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

  • VDS 30V
  • ID 30A
  • RDS(ON)( at VGS=10V) ＜11 mohm
  • RDS(ON)( at VGS=4.5V) ＜15 mohm
  • 100% UIS Tested
  • 100% ▽VDS Tested General Description
  • Trench Power LV MOSFET technology
  • Excellent package for heat dissipation
  • High density cell design for low RDS(ON)

Applications

  • High current load applications
  • Load switching
  • Hard switched and high frequency circuits
  • Uninterruptible power supply ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage VDS 30 V Gate-source Voltage VGS ±20 V Drain Current TC=25℃ ID A TC=100℃ 21 Pulsed Drain Current A IDM 115 A Total Power Dissipation TC=25℃ PD 21 W TC=100℃ 10.5 W Single Pulse Avalanche Energy B EAS 112 mJ Thermal Resistance Junction-to-Case C RθJC 7.1 ℃/ W Junction and Storage Temperature Range TJ ,TSTG -55～+175 ℃ ■ Ordering Information (Example) PREFERED P/N PACKING CODE Marking MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE LMQ30N03A F1 Q30N03 5000 13“ reel LMQ30N03A Enhancement Mode Field Effect Transistor N-Channel Rev : www.leiditech.com 01.06.2018 1/5

■ Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Static Parameter Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=250μA 30 V Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V TJ=25℃ 1 μA TJ=55℃ 5 Gate-Body Leakage Current IGSS VGS= ±20V, VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS= VGS, ID=250μA 1.0 1.5 2.5 V Static Drain-Source On-Resistance RDS(ON) VGS= 10V, ID=15A 8.5 11 mΩ VGS= 4.5V, ID=15A 10.5 15 Diode Forward Voltage VSD IS=15A,VGS=0V 0.85 1.2 V Maximum Body-Diode Continuous Current IS 30 A Dynamic Parameters Input Capacitance Ciss VDS=15V,VGS=0V,f=1MHZ 950 pF Output Capacitance Coss 204 Reverse Transfer Capacitance Crss 121 Switching Parameters Total Gate Charge Qg VGS=10V,VDS=15V,ID=30A nC Gate-Source Charge Qgs 7 Gate-Drain Charge Qgd 5 Reverse Recovery Charge Qrr IF=15A, di/dt=100A/us Reverse Recovery Time trr 26 ns Turn-on Delay Time tD(on) VGS=10V,VDD=20V, ID=2A,RL=1Ω RGEN=3Ω Turn-on Rise Time tr 15 Turn-off Delay Time tD(off) 27 Turn-off fall Time tf 7 A. Pulse Test: Pulse Width ≤300us,Duty cycle ≤2%. B. T j=25℃, VDD=20V, VG=10V, L=0.5mH, Rg=25Ω C. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design, while RθJA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in 2 pad of 2oz copper. LMQ30N03A Rev : www.leiditech.com 01.06.2018 2/5

■ Typical Performance Characteristics Figure1. Output Characteristics Figure2. Transfer Characteristics Figure3. Capacitance Characteristics Figure4. Gate Charge Figure5. Drain-Source on Resistance Figure6. Drain-Source on Resistance LMQ30N03A Rev : www.leiditech.com 01.06.2018 3/5

Figure7. Safe Operation Area Figure8. Switching wave LMQ30N03A Rev : www.leiditech.com 01.06.2018 4/5

■ DFN3.3X3.3 Package information LMQ30N03A Shangh ai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev : www.leiditech.com 01.06.2018 5/5