LMQ20N04A LEIDITECH

Document overview

  • Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

  • VDS 40V
  • ID 20A
  • RDS(ON)( at VGS=10V) ＜14.0 mohm
  • RDS(ON)( at VGS=4.5V) ＜18.5 mohm
  • 100% UIS Tested
  • 100% ▽VDS Tested General Description
  • Trench Power LV MOSFET technology
  • Excellent package for heat dissipation
  • High density cell design for low RDS(ON)

Applications

  • High current load applications
  • Load switching
  • Hard switched and high frequency circuits
  • Uninterruptible power supply ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage VDS 40 V Gate-source Voltage VGS ±20 V Drain Current TC=25℃ ID A TC=100℃ 14 Pulsed Drain Current A IDM 90 A Single Pulse Avalanche Energy B EAS 70 mJ Total Power Dissipation TC=25℃ PD W TA=25℃ 2.34 Thermal Resistance Junction-to-Case RθJC 5.9 ℃/ W RθJA 53.4 Junction and Storage Temperature Range TJ ,TSTG -55～+150 ℃ ■ Ordering Information (Example) PREFERED P/N PACKING CODE Marking MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE LMQ20N04A F1 Q20N04 5000 10000 100000 13“ reel LMQ20N04A Enhancement Mode Power MOSFET N-Channel Rev : www.leiditech.com 01.06.2018 1/5

■ Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Static Parameter Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=250μA 40 V Zero Gate Voltage Drain Current IDSS VDS=40V,VGS=0V 1 μA Gate-Body Leakage Current IGSS VGS= ±20V, VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS= VGS, ID=250μA 1.0 1.5 2.5 V Static Drain-Source On-Resistance RDS(ON) VGS= 10V, ID=20A 11 14 mΩ VGS= 4.5V, ID=10A 14.3 18.5 Diode Forward Voltage VSD IS=10A,VGS=0V 0.7 1.2 V Maximum Body-Diode Continuous Current IS 35 A Dynamic Parameters Input Capacitance Ciss VDS=20V,VGS=0V,f=1MHZ 750 pF Output Capacitance Coss 150 Reverse Transfer Capacitance Crss 80 Switching Parameters Total Gate Charge Qg VGS=10V,VDS=20V,ID=20A nC Gate-Source Charge Qgs 3 Gate-Drain Charge Qgd 2.5 Reverse Recovery Charge Qrr IF=20A, di/dt=100A/us Reverse Recovery Time trr 29 ns Turn-on Delay Time tD(on) VGS=10V,VDD=20V, ID=2A,RL=1Ω RGEN=3Ω Turn-on Rise Time tr 17.5 Turn-off Delay Time tD(off) 31 Turn-off fall Time tf 17 A. Pulse Test: Pulse Width≤300us,Duty cycle ≤2%. B. Tj=25℃, VDD=20V, VG=10V, L=0.5mH, Rg=25Ω LMQ20N04A Rev : www.leiditech.com 01.06.2018 2/5

■ Typical Performance Characteristics Figure1. Output Characteristics Figure2. Transfer Characteristics Figure3. Capacitance Characteristics Figure4. Gate Charge Figure5. Drain-Source on Resistance Figure6. Drain-Source on Resistance LMQ20N04A Rev : www.leiditech.com 01.06.2018 3/5

Figure7. Safe Operation Area Figure8. Switching wave LMQ20N04A Rev : www.leiditech.com 01.06.2018 4/5

■ DFN3.3X3.3 Package information LMQ20N04A Shanghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev : www.leiditech.com 01.06.2018 5/5