LMQ1216A LEIDITECH

Document overview

  • Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

  • VDS -20V
  • ID -16A
  • RDS(ON)( at VGS=-4.5V) ＜17 mohm
  • RDS(ON)( at VGS=-2.5V) ＜21 mohm
  • RDS(ON)( at VGS=-1.8V) ＜28 mohm General Description
  • Trench Power LV MOSFET technology
  • High density cell design for Low RDS(ON)
  • High Speed switching

Applications

  • Battery protection
  • Load switch
  • Power management ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Maximum Unit Drain-source Voltage VDS -20 V Gate-source Voltage VGS ±10 V Drain Current Tc=25℃ @ Steady State ID -16 A TC=70℃ @ Steady State -12.8 Pulsed Drain Current A IDM -64 A Total Power Dissipation @ TC=25℃ PD 18 W Thermal Resistance Junction-to-Case @ Steady State RθJC 6.9 ℃/ W Junction and Storage Temperature Range TJ ,TSTG -55～+150 ℃ ■ Ordering Information (Example) PREFERED P/N PACKING CODE Marking MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE LMQ1216A F1 Q1216 4000 40000 160000 7” reel Enhancement Mode Power MOSFET P-Channel LMQ1216A Rev : www.leiditech.com 01.06.2018 1/5

■ Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Static Parameter Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=-250μA -20 V Zero Gate Voltage Drain Current IDSS VDS=-20V,VGS=0V,TC=25℃ -1 μA Gate-Body Leakage Current IGSS VGS= ±10V, VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS= VGS, ID=-250μA -0.4 -0.62 -1.0 V Static Drain-Source On-Resistance RDS(ON) VGS= -4.5V, ID=-10A 13 17 mΩ VGS= -2.5V, ID=-6.5A 16 21 VGS= -1.8V, ID=-4.0A 20 28 Diode Forward Voltage VSD IS=-13A,VGS=0V -0.8 -1.2 V Maximum Body-Diode Continuous Current IS -13 A Dynamic Parameters Input Capacitance Ciss VDS=-10V,VGS=0V,f=1MHZ 2050 pF Output Capacitance Coss 411 Reverse Transfer Capacitance Crss 362 Switching Parameters Total Gate Charge Qg VGS=-10V,VDS=-15V,ID=-9.1A nC Gate Source Charge Qgs 5.3 Gate Drain Charge Qgd 7.6 Turn-on Delay Time tD(on) VGS=-10V,VDS=-15V, ID=-6A, RGEN=2.5Ω ns Turn-on Rise Time tr 20 Turn-off Delay Time tD(off) 95 Turn-off Fall Time tf 65 A. Repetitive Rating: Pulse width limited by maximum junction temperature. LMQ1216A Rev : www.leiditech.com 01.06.2018 2/5

■ Typical Performance Characteristics Figure1. Output Characteristics Figure2. Transfer Characteristics Figure3. Capacitance Characteristics Figure4. Gate Charge Figure5. Drain-Source on Resistance Figure6. Drain-Source on Resistance LMQ1216A Rev : www.leiditech.com 01.06.2018 4/5

Figure7. Safe Operation Area Figure8. Switching wave LMQ1216A Rev : www.leiditech.com 01.06.2018 4/5

■ DFN2020-6L(0.45mm) Package information LMQ1216A Shanghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev : www.leiditech.com 01.06.2018 5/5